SAC5.0 thru SAC75
Document Number: SAC5.0 thru SAC75 www.smsemi.com
Feb.29, 2012 1
Maximum Ratings and Electrical Characteristics @ 25OC unless otherwise specified
Symbol
Conditions
Value
Unit
PPPM
Peak pulse power capability with a 10/1000μs
500
W
IPPM
Peak pulse current with a 10/1000μs
SEE TABLE1
A
PM(AV)
Steady state power dissipation at TL=75℃ ,Lead lengths 0.375”(10mm)
2.5
W
VF
Maximum instantaneous forward voltage at 30A
3.5
V
TJ, TSTG
Operating and Storage Temperature
-65 to +150
℃
Transient Voltage Suppressor
Breakdown Voltage 5.0 to 75 Volts
Peak Pulse Power 500 Watts
Features
Breakdown Voltages (VBR) from 5.0 to 75V
500W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
Low incremental surge resistance
Fast Response Time
Excellent clamping capability
High temperature soldering guaranteed: 265℃ /10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Application
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICS, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Mechanical Data
Case: Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals: Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking: Part number and cathode band
Polarity: Cathode indicated by band
Weight: 0.3g（Approximately）
CASE: DO-204AL (DO-41)
Dimensions in inches and (millimeters)
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SAC5.0 thru SAC75
Document Number: SAC5.0 thru SAC75 www.smsemi.com
Feb.29, 2012 2
Electrical Characteristics @ 25°C (Unless Otherwise Noted) TABLE1
Microsemi
Part
Number
Reverse
Stand
Off
Voltage
(Note1)
Breakdown
Voltage
VBR @ IBR
1.0mA
Maximum
Standby
current
ID @ VWM
Maximum
Peak
Pulse
Current
Maximum
Clamping
Voltage
VC @
IPP=5.0A
(Note2)
Maximum
Capacitance
@ 0 Volts
pF
Working
Inverse
Blocking
Voltage
Inverse
Blocking
Leakage
Current
@ VWIB
Peak
Inverse
Blocking
Voltage
VWM(V) VBR(V) ID(µA) IPP (A) VC(V) C (pF) VWIB(V) IIB(μA) VPIB(V)
SAC5.0
SAC6.0
SAC7.0
SAC8.0
5.0
6.0
7.0
8.0
7.60
7.90
8.33
8.89
300
300
300
100
44.0
41.0
38.0
36.0
10.0
11.2
12.6
13.4
30
30
30
30
75
75
75
75
10
10
10
10
100
100
100
100
SAC8.5
SAC10
SAC12
SAC15
7.5
10.0
12.0
15.0
9.44
11.1
13.3
16.7
50
5.0
5.0
5.0
34.0
29.0
25.0
20.0
14.0
16.3
19.0
23.6
30
30
30
30
75
75
75
75
10
10
10
10
100
100
100
100
SAC18
SAC22
SAC26
SAC36
18.0
22.0
26.0
36.0
20.0
24.4
28.9
40.0
5.0
5.0
5.0
5.0
15.0
14.0
11.1
8.6
28.8
35.4
42.3
60.0
30
30
30
30
75
75
75
75
10
10
10
10
100
100
100
100
SAC45
SAC50
SAC75
45.0
50.0
75.0
50.0
55.5
83.3
5.0
5.0
5.0
6.8
5.8
4.1
77.0
88.0
121.0
30
30
30
150
150
150
10
10
10
200
200
200
Note1: A transient voltage suppressor is normally selected according to voltage (VWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
Note2: Test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein.
Characteristic Curve
Fig. 1 Peak Pulse Power vs. Pulse Time Fig.2 Pulse Waveform for Exponential Surge
PPP - Peak Pulse Power (kW)
100
10
1.0
0.1 0.1 1.0 10 10
2
10
3
10
4
tw-Pulse Width (µs)
0 1.0 2.0 3.0
t-Time (ms)
tr=10µs
Peak Value IPP
Half Value IPP
2
10/1000µs Waveform
as defined by R.E.A.
150
100
50
0
IPP - Peak Pulse Current - % IPP
Impulse
Exponential
Decay
1.0
0.5
I
PP
I
PP
t
W
t
W
tW=0.71p
tp
Half Sine
Square
Wave
Current Waveforms
t
W
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SAC5.0 thru SAC75
Document Number: SAC5.0 thru SAC75 www.smsemi.com
Feb.29, 2012 3
Schematic Applications
The TVS low capacitance device configuration is shown in Fig.4. As a further option for unidirectional applications, an
additional low capacitance rectifier diode may be used in parallel in the sane polarity direction as the TVS as shown in
Fig.5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging
the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier
diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping
voltage VC. If using two (2) low capacitance TVS devices in also provided. The unidirectional and bidirectional
configurations in Fig.5 and 6 will both in twice the capacitance of Fig.4
Fig.3 Derating Curve
100
75
50
25
0
PPP-Peak Pulse Power or continuous
Average Power in Percent of 25 ℃ (%)
Peak Pulse Power
(
Sin
g
le Pulse
)
.
Average
Power
0 50 100 150 200
Lead or Ambient Temperature (℃)
TVS
DIODE
+
IN
OUT
+
Fig.4 TVS with internal
Low Capacitance Diode Fig.5 Optional Unidirectional
configuration (TVS and
separate rectifier diode
in parallel)
Fig.6 Optional Bidirectional
configuration (two TVS and
devices in anti-parallel)
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