PowerSSO-16
Features
Max transient supply voltage VCC 40 V
Operating voltage range VCC 4 to 28 V
Typ. on-state resistance (per Ch) RON 100 mΩ
Current limitation (typ) ILIMH 15 A
Stand-by current (max) ISTBY 0.5 µA
Minimum cranking supply Voltage (VCC decreasing) VUSD_cranking 2.85 V
AEC-Q100 qualified
Extreme low voltage operation for deep cold cranking applications (compliant
with LV124, revision 2013)
General
Quad channel smart high-side driver with CurrentSense analog feedback
Very low standby current
Compatible with 3 V and 5 V CMOS outputs
CurrentSense diagnostic functions
Analog feedback of load current with high precision proportional current
mirror
Overload and short to ground (power limitation) indication
Thermal shutdown indication
OFF-state open-load detection
Output short to VCC detection
Sense enable/disable
Protections
Undervoltage shutdown
Overvoltage clamp
Load current limitation
Self limiting of fast thermal transients
Configurable latch-off on overtemperature or power limitation
Loss of ground and loss of VCC
Reverse battery with external components
Electrostatic discharge protection
Applications
Automotive resistive, inductive and capacitive loads
Protected supply for ADAS systems: radars and sensors
Automotive lamps
Product status
VNQ7E100AJ
Product summary
Order code VNQ7E100AJTR
Package PowerSSO-16
Packing Tape and reel
Quad channel high-side driver with CurrentSense analog feedback for automotive
applications
VNQ7E100AJ
Datasheet
DS12570 - Rev 3 - February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
Description
The device is a quad channel high-side driver manufactured using ST proprietary
VIPower® M0-7 technology and housed in a PowerSSO-16 package. The device is
designed to drive 12 V automotive grounded loads through a 3 V and 5 V CMOS-
compatible interface, providing protection and diagnostics.
The device integrates advanced protective functions such as load current limitation,
overload active management by power limitation and overtemperature shutdown with
configurable latch-off.
A FaultRST pin unlatches the output in case of fault or disables the latch-off
functionality.
A multiplexed current sense pin delivers high precision proportional load current
sense in addition to the detection of overload and short circuit to ground, short to VCC
and off-state openload.
A sense enable pin allows OFF-state diagnosis to be disabled during the module low-
power mode as well as external sense resistor sharing among similar devices.
VNQ7E100AJ
DS12570 - Rev 3 page 2/45
1Block diagram and pin description
Figure 1. Block diagram
VCC
V
0
MUX
0
V
T
V
0
SEL0
SEn
1
1
2
INPUT3
2
3
SEL1
Sense
Current
Limitation
Current
– OUT
CC
Clamp
Gate Driver
Power Limitation
Overtemperature
Short to VCC
Open-Load in OFF
Channel 0
Control & Diagnostic
Channel 1
Channel 2
Channel 3
shut-down
Undervoltage
Internal supply
– GND
Clamp
CC
FaultRST
INPUT
INPUT
INPUT
GND SENSEH
Fault
CS
OUTPUT
OUTPUT
OUTPUT
OUTPUT
CH 1
CH 2
CH 3
CH 0
GADG1003171112PS
Table 1. Pin functions
Name Function
VCC Battery connection.
OUTPUT0,1,2,3 Power output.
GND Ground connection. Must be reverse battery protected by an external diode / resistor network.
INPUT0,1,2,3 Voltage controlled input pin with hysteresis, compatible with 3 V and 5 V CMOS outputs. They control output
switch state.
CS Analog current sense output pin delivers a current proportional to the load current.
SEn Active high, compatible with 3 V and 5 V CMOS outputs input pin; it enables the CS diagnostic pin.
SEL0,1 Active high, compatible with 3 V and 5 V CMOS outputs input pin; They address the CS multiplexer.
FaultRST Active low, compatible with 3 V and 5 V CMOS outputs input pin; it unlatches the output in case of fault; If
kept low, sets the outputs in auto-restart mode.
VNQ7E100AJ
Block diagram and pin description
DS12570 - Rev 3 page 3/45
Figure 2. Configuration diagram (top view)
1
2
3
4
5
6INPUT2
INPUT0
SEL1
7
8
INPUT1
INPUT3
16
15
14
13
12
11
OUTPUT1
N.C.
10
9
SEL0
OUTPUT2
OUTPUT3
SEn
CS
FaultRST
OUTPUT0
TAB = VCC
PowerSSO-16
GAPGCFT00632
N.C.
GND
Table 2. Suggested connections for unused and not connected pins
Connection / pin CS N.C. Output Input SEn, SELx, FaultRST
Floating Not allowed X (1) X X X
To ground Through 1 kΩ resistor X Not allowed Through 15 kΩ resistor Through 15 kΩ resistor
1. X: do not care.
VNQ7E100AJ
Block diagram and pin description
DS12570 - Rev 3 page 4/45
2Electrical specification
Figure 3. Current and voltage conventions
VIN
OUTPUT0,1,2,3
CS
FaultRST
SEn
SEL0,1
INPUT0,1,2,3
IIN
ISEL
ISEn
IFR
IGND
VSENSE
VOUT
VCC
VFn
IS
IOUT
ISENSE
VCC
VSEL
VSEn
VFR
GADG0704171646PS
Note: VFn = VOUTn - VCC during reverse battery condition.
2.1 Absolute maximum ratings
Stressing the device above the rating listed in Table 3. Absolute maximum ratings may cause permanent damage
to the device. These are stress ratings only and operation of the device at these or any other conditions above
those indicated in the operating sections of this specification is not implied. Exposure to the conditions in the table
below for extended periods may affect device reliability.
Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
VCC DC supply voltage 38
V
-VCC Reverse DC supply voltage 0.3
VCCPK Maximum transient supply voltage (ISO 16750-2:2010 Test B clamped to 40 V; RL = 4 Ω) 40 V
VCCJS Maximum jump start voltage for single pulse short circuit protection 28 V
-IGND DC reverse ground pin current 200 mA
IOUT OUTPUT0,1,2,3 DC output current Internally limited
A
-IOUT Reverse DC output current 7.5
IIN INPUT0,1,2,3 DC input current
-1 to 10 mA
ISEn SEn DC input current
ISEL SEL0,1 DC input current
IFR FaultRST DC input current -1 to 1.5 mA
ISENSE
CS pin DC output current
(VGND = VCC and VSENSE < 0 V) 10
mA
CS pin DC output current in reverse (VCC < 0 V) -20
VNQ7E100AJ
Electrical specification
DS12570 - Rev 3 page 5/45
Symbol Parameter Value Unit
EMAX
Maximum switching energy (single pulse)
(TDEMAG = 0.4 ms; Tjstart = 150°C) 10 mJ
VESD
JEDEC standard (Electrostatic discharge) JEDEC 22A-114F
INPUT0,1,2,3 4000
V
CS, SEn 2000
SEL0,1, FaultRST 4000
OUTPUT0,1,2,3 4000
VCC 4000
VESD Charge device model (CDM-AEC-Q100-011) 750 V
TjJunction operating temperature -40 to 150
°C
Tstg Storage temperature -55 to 150
2.2 Thermal data
Table 4. Thermal data
Symbol Parameter Typ. value Unit
Rthj-board Thermal resistance junction-board (JEDEC JESD 51-5 / 51-8) (1)(2) 7.7
°C/W
Rthj-amb Thermal resistance junction-ambient (JEDEC JESD 51-5) (1)(3) 60.3
Rthj-amb Thermal resistance junction-ambient (JEDEC JESD 51-7) (1)(2) 27.1
Rthj-top Thermal resistance junction-top (JEDEC JESD 51-7)(1)(2) 13.5
1. One channel ON.
2. Device mounted on four-layers 2s2p PCB.
3. Device mounted on two-layers 2s0p PCB with 2 cm2 heatsink copper trace.
VNQ7E100AJ
Thermal data
DS12570 - Rev 3 page 6/45
2.3 Main electrical characteristics
7 V < VCC < 28 V; -40°C < Tj < 150°C, unless otherwise specified.
All typical values refer to VCC = 13 V; Tj = 25°C, unless otherwise specified.
Table 5. Electrical characteristics during cranking
Symbol Parameter Test conditions Min. Typ. Max. Unit
VUSD_Cranking
Minimum cranking supply
voltage (VCC decreasing) 2.85 V
RON On-state resistance (1) IOUT = 0.2 A; VCC = 2.85 V; VCC
decreasing 300
TTSD (2) Shutdown temperature (VCC
decreasing) VCC =2.85 V 140 °C
1. For each channel.
2. Parameter guaranteed by design and characterization; not subject to production test.
Table 6. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
VCC Operating supply voltage 4 13 28
V
VUSD Undervoltage shutdown 2.85
VUSDReset Undervoltage shutdown reset 5
VUSDhyst Undervoltage shutdown
hysteresis 0.3
RON On-state resistance (1)
IOUT = 1 A; Tj = 25°C 100
IOUT = 1 A; Tj = 150°C 210
IOUT = 1 A; VCC = 4 V; Tj = 25°C (2) 160
Vclamp Clamp voltage
IS = 20 mA; 25°C < Tj < 150°C 41 46 52
V
IS = 20 mA; Tj = -40°C 38
ISTBY
Supply current in Standby at
VCC = 13 V (3)
VCC = 13 V;
VIN = VOUT = VFR = VSEn = 0 V;
VSEL0,1 = 0 V; Tj = 25°C
0.5 µA
VCC = 13 V;
VIN = VOUT = VFR = VSEn = 0 V;
VSEL0,1 = 0 V; Tj = 85°C (4)
0.5 µA
VCC = 13 V;
VIN = VOUT = VFR = VSEn = 0 V;
VSEL0,1 = 0 V; Tj = 125°C
3 µA
tD_STBY Standby mode blanking time
VCC = 13 V
VIN = VOUT = VFR = VSEL0,1 = 0 V;
VSEn = 5 V to 0 V
60 300 550 µs
IS(ON) Supply current VCC = 13 V; VSEn = VFR = VSEL0,1 = 0 V;
VIN0,1,2,3 = 5 V; IOUT0,1,2,3 = 0 A 10 16 mA
IGND(ON)
Control stage current
consumption in ON state. All
channels active.
VCC = 13 V; VSEn = 5 V;
VFR = VSEL0,1 = 0 V; VIN0,1,2,3 = 5 V;
IOUT0,1,2,3 = 1 A
20 mA
VNQ7E100AJ
Main electrical characteristics
DS12570 - Rev 3 page 7/45
Symbol Parameter Test conditions Min. Typ. Max. Unit
IL(off)
Off-state output current at
VCC = 13 V (1)
VIN = VOUT = 0 V; VCC = 13 V; Tj = 25°C 0 0.01 0.5
µA
VIN = VOUT = 0 V; VCC = 13 V; Tj = 125°C 0 3
VF
Output - VCC diode voltage at
Tj = 150°C IOUT = -1 A; Tj = 150°C 0.7 V
1. For each channel.
2. Parameter guaranteed only at Vcc = 4 V and Tj = 25 °C
3. PowerMOS leakage included.
4. Parameter specified by design; not subject to production test.
Table 7. Switching
VCC = 13 V; -40°C < Tj < 150°C, unless otherwise specified
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) (1) Turn-on delay time at
Tj = 25°C
RL = 13 Ω
10 50 120
µs
td(off) (1) Turn-off delay time at
Tj = 25°C 10 35 100
(dVOUT/dt)on (1) Turn-on voltage slope at
Tj = 25°C
RL = 13 Ω
0.1 0.3 0.7
V/µs
(dVOUT/dt)off (1) Turn-off voltage slope at
Tj = 25°C 0.1 0.4 0.7
WON
Switching energy losses at
turn-on (twon)RL = 13 Ω 0.15 0.5 (2) mJ
WOFF
Switching energy losses at
turn-off (twoff)RL = 13 Ω 0.1 0.5(2) mJ
tSKEW (1) Differential Pulse skew
(tPHL - tPLH)RL = 13 Ω -65 -15 35 µs
1. See Figure 6. Switching times and Pulse skew.
2. Parameter guaranteed by design and characterization, not subject to production test
Table 8. Logic Inputs
7 V < VCC < 28 V; -40°C < Tj < 150°C
Symbol Parameter Test conditions Min. Typ. Max. Unit
INPUT0,1,2,3 characteristics
VIL Input low level voltage 0.9 V
IIL Low level input current VIN = 0.9 V 1 µA
VIH Input high level voltage 2.1 V
IIH High level input current VIN = 2.1 V 10 µA
VI(hyst) Input hysteresis voltage 0.2 V
VICL Input clamp voltage
IIN = 1 mA 5.3 7.2
V
IIN = -1 mA -0.7
FaultRST characteristics
VFRL Input low level voltage 0.9 V
VNQ7E100AJ
Main electrical characteristics
DS12570 - Rev 3 page 8/45
7 V < VCC < 28 V; -40°C < Tj < 150°C
Symbol Parameter Test conditions Min. Typ. Max. Unit
IFRL Low level input current VIN = 0.9 V 1 µA
VFRH Input high level voltage 2.1 V
IFRH High level input current VIN = 2.1 V 10 µA
VFR(hyst) Input hysteresis voltage 0.2 V
VFRCL Input clamp voltage
IIN = 1 mA 5.3 7.5
V
IIN = -1 mA -0.7
SEL0,1 characteristics (7 V < VCC < 18 V)
VSELL Input low level voltage 0.9 V
ISELL Low level input current VIN = 0.9 V 1 µA
VSELH Input high level voltage 2.1 V
ISELH High level input current VIN = 2.1 V 10 µA
VSEL(hyst) Input hysteresis voltage 0.2 V
VSELCL Input clamp voltage
IIN = 1 mA 5.3 7.2
V
IIN = -1 mA -0.7
SEn characteristics (7 V < VCC < 18 V)
VSEnL Input low level voltage 0.9 V
ISEnL Low level input current VIN = 0.9 V 1 µA
VSEnH Input high level voltage 2.1 V
ISEnH High level input current VIN = 2.1 V 10 µA
VSEn(hyst) Input hysteresis voltage 0.2 V
VSEnCL Input clamp voltage
IIN = 1 mA 5.3 7.2
V
IIN = -1 mA -0.7
Table 9. Protections
7 V < VCC < 28 V; -40°C < Tj < 150°C
Symbol Parameter Test conditions Min. Typ. Max. Unit
ILIMH DC short circuit current
VCC = 13 V 11 15 22
A
4 V < VCC < 18 V (1) 22
ILIML Short circuit current during
thermal cycling VCC = 13 V; TR < Tj < TTSD 6
TTSD Shutdown temperature 150 175 200
°C
TRReset temperature(1) TRS + 1 TRS + 7
TRS Thermal reset of fault
diagnostic indication VFR = 0 V; VSEn = 5 V; 135
THYST
Thermal hysteresis (TTSD -
TR)(1) 7
ΔTJ_SD Dynamic temperature Tj = -40°C; VCC = 13 V 60 K
VNQ7E100AJ
Main electrical characteristics
DS12570 - Rev 3 page 9/45
7 V < VCC < 28 V; -40°C < Tj < 150°C
Symbol Parameter Test conditions Min. Typ. Max. Unit
tLATCH_RST Fault reset time for output
unlatch(1)
VFR = 5 V to 0 V; VSEn = 5 V
E.g. Ch0
VIN0 = 5 V; VSEL0,1 = 0 V
3 10 20 µs
VDEMAG Turn-off output voltage clamp
IOUT= 1 A; L = 6 mH; Tj = -40°C VCC - 38 V
IOUT= 1 A; L = 6 mH; Tj = 25°C to 150°C VCC - 41 VCC - 46 VCC - 52 V
1. Parameter guaranteed by design and characterization; not subject to production test.
Table 10. CurrentSense
7 V < VCC < 18 V; -40°C < Tj < 150°C
Symbol Parameter Test conditions Min. Typ. Max. Unit
VSENSE_CL Current sense clamp voltage
VSEn = 0 V; ISENSE = 1 mA -17 -12
V
VSEn = 0 V; ISENSE = -1 mA 7
Current Sense characteristics
K0IOUT/ISENSE
IOUT = 0.025 A; VSENSE = 0.5 V;
VSEn = 5 V -30% 710 +30%
dK0/K0 (1) (2) Current sense ratio drift IOUT = 0.025 A; VSENSE = 0.5 V;
VSEn = 5 V -20 +20 %
K1IOUT/ISENSE IOUT = 0.15 A; VSENSE = 4 V; VSEn = 5 V -15% 710 +15%
dK1/K1 (1) (2) Current sense ratio drift IOUT = 0.15 A; VSENSE = 4 V; VSEn = 5 V -10 +10 %
K2IOUT/ISENSE IOUT = 0.7 A; VSENSE = 4 V; VSEn = 5 V -7% 710 +7%
dK2/K2 (1) (2) Current sense ratio drift IOUT = 0.7 A; VSENSE = 4 V; VSEn = 5 V -6 +6 %
K3IOUT/ISENSE IOUT = 2 A; VSENSE = 4 V; VSEn = 5 V -7% 710 +7%
dK3/K3 (1) (2) Current sense ratio drift IOUT = 2 A; VSENSE = 4 V; VSEn = 5 V -6 +6 %
ISENSE_OL CS current for OL detection IOUT = 0.01 A; VSENSE = 4 V; VSEn = 5 V 24 µA
ISENSE0 Current sense leakage
current
Current sense disabled: VSEn = 0 V; 0 0.5
µA
Current sense disabled:
-1 V < VSENSE < 5 V(1) -0.5 0.5
Current sense enabled: VSEn = 5 V All
channels ON; IOUTX = 0 A;
ChX diagnostic selected:
E.g. Ch0:
VIN0,1,2,3 = 5 V; VSEL0 = 0 V;
VSEL1 = 0 V; IOUT0 = 0 A;
IOUT1,2,3 = 1 A
0 10
Current sense enabled: VSEn = 5 V; ChX
OFF;
ChX diagnostic selected:
E.g. Ch0:
VIN0 = 0 V; VIN1,2,3 = 5 V; VSEL0 = 0
V; VSEL1 = 0 V; IOUT1,2,3 = 1 A
0 2
VNQ7E100AJ
Main electrical characteristics
DS12570 - Rev 3 page 10/45
7 V < VCC < 18 V; -40°C < Tj < 150°C
Symbol Parameter Test conditions Min. Typ. Max. Unit
VOUT_MSD (1) Output Voltage for Current
sense shutdown
VSEn = 5 V; RSENSE = 2.7 kΩ
E.g. Ch0:
VIN0 = 5 V; VSEL0 = 0 V;
VSEL1 = 0 V; IOUT0 = 1 A
5 V
VSENSE_SAT CS saturation voltage
VCC = 7 V; RSENSE = 2.7 kΩ; VSEn = 5 V;
VIN0 = 5 V; VSEL0,1 = 0 V; IOUT0 = 2 A;
Tj = -40 °C
4.8 V
ISENSE_SAT (1) CS saturation current VCC = 7 V; VSENSE = 4 V; VIN0 = 5 V;
VSEn = 5 V; VSEL0,1 = 0 V; Tj = 150 °C 4 mA
IOUT_SAT (1) Output saturation current VCC = 7 V; VSENSE = 4 V; VIN0 = 5 V;
VSEn = 5 V; VSEL0,1 = 0 V; Tj = 150 °C 3.1 A
OFF-state diagnostic
VOL OFF-state open-load voltage
detection threshold
VSEn = 5 V; ChX OFF; ChX diagnostic
selected
E.g: Ch0
VIN0 = 0 V; VSEL0,1 = 0 V
2 3 4 V
IL(off2) (3) OFF-state output sink current
VIN = 0 V; VOUT = VOL;
Tj = -40°C to 125°C -100 -15 µA
tDSTKON
OFF-state diagnostic delay
time from falling edge of
INPUT (see
Figure 8. TDSKON )
VSEn = 5 V; ChX ON to OFF transition;
ChX diagnostic selected:
E.g: Ch0
VIN0 = 5 V to 0 V; VSEL0,1 = 0 V;
VOUT0 = 4 V; IOUT0 = 0 A
100 350 700 µs
tD_OL_V
Settling time for valid OFF-
state open-load diagnostic
indication from rising edge of
SEn
VIN0,1,2,3 = 0 V; VFR = 0 V; VSEL0,1 = 0 V;
VOUT0 = 4 V; VSEn = 0 V to 5 V 60 µs
tD_VOL
OFF-state diagnostic delay
time from rising edge of VOUT
VSEn = 5 V; ChX OFF;
ChX diagnostic selected:
E.g: Ch0
VIN0 = 0 V; VSEL0,1 = 0 V;
VOUT0 = 0 V to 4 V
5 30 µs
Fault diagnostic feedback (see Table 11. Truth table)
VSENSEH Current sense output voltage
in fault condition
VCC = 13 V; RSENSE = 1 kΩ
E.g: Ch0 in open load
VIN0 = 0 V; VSEn = 5 V;
VSEL0,1 = 0 V; IOUT0 = 0 A;
VOUT0 = 4 V
5 6.6 V
ISENSEH Current sense output current
in fault condition VCC = 13 V; VSENSE = 5 V 7 20 30 mA
Current sense timings (current sense mode - see Figure 7. Current sense timings (current sense mode))(4)
tDSENSE1H Current sense settling time
from rising edge of SEn
VIN = 5 V; VSEn = 0 V to 5 V;
RSENSE = 1 kΩ; RL = 6.5 Ω 60 µs
tDSENSE1L Current sense disable delay
time from falling edge of SEn
VSEn = 5 V to 0 V; RSENSE = 1 kΩ;
RL = 6.5 Ω 5 20 µs
VNQ7E100AJ
Main electrical characteristics
DS12570 - Rev 3 page 11/45
7 V < VCC < 18 V; -40°C < Tj < 150°C
Symbol Parameter Test conditions Min. Typ. Max. Unit
tDSENSE2H Current sense settling time
from rising edge of INPUT
VIN = 0 V to 5 V; VSEn = 5 V;
RSENSE = 1 kΩ; RL = 6.5 Ω 100 250 µs
ΔtDSENSE2H
Current sense settling time
from rising edge of IOUT
(dynamic response to a step
change of IOUT)
VIN = 5 V; VSEn = 5 V; RSENSE = 1 kΩ;
ISENSE = 90 % of ISENSEMAX; RL = 6.5 Ω 100 µs
tDSENSE2L
Current sense turn-off delay
time from falling edge of
INPUT
VIN = 5 V to 0 V; VSEn = 5 V;
RSENSE = 1 kΩ; RL = 6.5 Ω 50 250 µs
Current sense timings (Multiplexer transition times) (4)
tD_XtoY
Current sense transition delay
from ChX to ChY
VIN0 = 5 V; VIN1 = 5 V; VSEn = 5 V; VSEL1
= 0 V; VSEL0 = 0 V to 5 V; IOUT0 = 0 A;
IOUT1 = 1 A; RSENSE = 1 kΩ
20 µs
tD_CStoVSENSEH
Current sense transition delay
from stable current sense on
ChX to VSENSEH on ChY
VIN0 = 5 V; VIN1 = 0 V; VSEn = 5 V; VSEL1
= 0 V; VSEL0 = 0 V to 5 V; IOUT0 = 1 A;
VOUT1 = 4 V; RSENSE = 1 kΩ
20 µs
1. Parameter defined by design. Not subject to production test.
2. All values refer to VCC = 13 V; Tj = 25°C, unless otherwise specified.
3. Parameter granted at -40 °C < Tj < 125 °C"
4. Transition delay are measured up to +/- 10% of final conditions.
Figure 4. IOUT/ISENSE versus IOUT
GADG0903171157PS
0
200
400
600
800
1000
1200
0 1 2 3
K-factor
IOUT[A]
Max
Min
Typ
VNQ7E100AJ
Main electrical characteristics
DS12570 - Rev 3 page 12/45
Figure 5. Current sense accuracy versus IOUT
GADG0903171216PS
0
5
10
15
20
25
30
35
40
45
50
0 1 2 3
%
IOUT [A]
Current sense uncalibrated precision
Current sense calibrated precision
Figure 6. Switching times and Pulse skew
VOUT
t
Vcc
twon
80% Vcc
20% Vcc
twoff
INPUT
td(on)
tpLH tpHL
td(off)
t
dVOUT/dt
ON OFF
dVOUT/dt
GAPGCFT00797
VNQ7E100AJ
Main electrical characteristics
DS12570 - Rev 3 page 13/45
Figure 7. Current sense timings (current sense mode)
IN1
I
t t tt
Low
Low
Low
SEL1
SEL0
SEn
OUT1
Current Sense
DSENSE2H DSENSE1L
High
High
High
DSENSE1H DSENSE2L
GADG0704171311PS
Figure 8. TDSKON
TDSTKON
VINPUT
VOUT
MultiSense
VOUT > VOL
GAPG2609141140CFT
VNQ7E100AJ
Main electrical characteristics
DS12570 - Rev 3 page 14/45
Table 11. Truth table
Mode Conditions INXFR SEn SELXOUTXCurrent sense Comments
Standby All logic inputs low L L L L L Hi-Z Low quiescent current
consumption
Normal Nominal load connected;
Tj < 150°C
L X
See (1)
LSee (1)
H L H See (1) Outputs configured for
auto-restart
H H H See (1) Outputs configured for
Latch-off
Overload
Overload or short to GND
causing:
Tj > TTSD or ΔTj > ΔTj_SD
L X
See (1)
LSee (1)
H L H See (1) Output cycles with
temperature hysteresis
H H L See (1) Output latches-off
Under-voltage VCC < VUSD (falling) X X X X L
L
Hi-Z
Hi-Z
Re-start when
VCC > VUSD +
VUSDhyst (rising)
OFF-state
diagnostics
Short to VCC L X
See (1)
HSee (1)
Open-load L X H See (1) External pull-up
Negative output
voltage Inductive loads turn-off L X See (1) < 0 V See (1)
1. Refer to Table 12. Current sense multiplexer addressing
Table 12. Current sense multiplexer addressing
SEn SEL1SEL0
MUX
channel
Current sense output
Nomal mode Overload OFF-state diag. (1) (2)
(3) Negative output
L X X Hi-Z
H L L Channel 0
diagnostic
ISENSE = 1/
K * IOUT0
VSENSE =
VSENSEH
VSENSE = VSENSEH Hi-Z
H L H Channel 1
diagnostic
ISENSE = 1/
K * IOUT1
VSENSE =
VSENSEH
VSENSE = VSENSEH Hi-Z
H H L Channel 2
diagnostic
ISENSE = 1/
K * IOUT2
VSENSE =
VSENSEH
VSENSE = VSENSEH Hi-Z
H H H Channel 3
diagnostic
ISENSE = 1/
K * IOUT3
VSENSE =
VSENSEH
VSENSE = VSENSEH Hi-Z
1. In case the output channel corresponding to the selected MUX channel is latched off while the relevant input is low, CS pin
delivers feedback according to OFF-State diagnostic.
2. Example 1: FR = 1; IN0 = 0; OUT0 = L (latched); MUX channel = channel 0 diagnostic; CS = 0
3. Example 2: FR = 1; IN0 = 0; OUT0 = latched, VOUT0 > VOL; MUX channel = channel 0 diagnostic; CS = VSENSEH
VNQ7E100AJ
Main electrical characteristics
DS12570 - Rev 3 page 15/45
2.4 Waveforms
Figure 9. Latch functionality - behavior in hard short-circuit condition (TAMB << TTSD)
Figure 10. Latch functionality - behavior in hard short-circuit condition
Thermal shut down
cycling
in AutoRestart mode
Logic
high
Logic
high
Logic
high
Logic
high
Hard
short
circuit
VsenseH
IlimH
IlimL
TAMB
TTSD
TR
Input
Fault Reset
Multisense
voltage
Output
Voltage
Output
current
Junction
temperature
Sense
enable
Internal
fault
detection
tt > tlatch RST
Vout <5V Vout <5V
VNQ7E100AJ
Waveforms
DS12570 - Rev 3 page 16/45
Figure 11. Latch functionality - behavior in hard short-circuit condition (autorestart mode + latch off)
Figure 12. Standby mode activation
VNQ7E100AJ
Waveforms
DS12570 - Rev 3 page 17/45
Figure 13. Standby state diagram
GAPGCFT00598
Normal Operation
Stand-by Mode
t > t D_STBY
INx = Low
AND
FaultRST = Low
AND
SEn = Low
AND
SELx = Low
INx = High
OR
FaultRST = High
OR
SEn = High
OR
SELx = High
VNQ7E100AJ
Waveforms
DS12570 - Rev 3 page 18/45
2.5 Electrical characteristics curves
Figure 14. OFF-state output current
GADG071220181211OSOC
300
250
200
150
100
50
0
-50 -25 0 25 50 75 100 125 150
Iloff [nA]
T [°C]
VCC = 13 V
Vin = Vout = 0
Off state
175
Figure 15. Standby current
GADG071220181212STBC
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
ISTBY [µA]
T [°C]
VCC = 13 V
175
Figure 16. IGND(ON) vs. Iout
GADG071220181212IGIO
10
8
6
4
2
0
-50 -25 0 25 50 75 100 125 150
IGND(ON) [mA]
T [°C]
VCC = 13 V
IOUT = 1 A
175
Figure 17. Logic input high level voltage
GADG071220181214LILV
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
ViIH ,VFRH ,VSELH ,VSEnH [V]
T [°C]
175
Figure 18. Logic input low level voltage
GADG071220181214LILLV
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
ViIL ,VFRL ,VSELL ,VSEnL [V]
T [°C]
175
Figure 19. High level logic input current
GADG101220181119HLLIC
3.5
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150
IiH ,IFRH ,ISELH ,ISEnH [µA]
T [°C]
175
VNQ7E100AJ
Electrical characteristics curves
DS12570 - Rev 3 page 19/45