1N4741A THRU 1M200Z
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt
F
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l Low profile package
l Built-in strain relief
l Glass passivated junction
l Low inductance
l Typical IR less than 5.0£gA above 11V
l High temperature soldering :
260 ¢J/10 seconds at terminals
l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
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Case: Molded plastic, DO-41
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram
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Ratings at 25 ¢J ambient temperature unless otherwise specified.SYMBOLVALUEUNITS
Peak Pulse Power Dissipation on TA=50 ¢J(Note A)
Derate above 50 ¢J P
D
1.0
6.67 Watts
mW/¢J
Peak forward Surge Current 8.3ms single half sine-wave
superimposed on rated load(JEDEC Method) (Note B)I
F
S
M
10 Amps
Operating Junction and Storage Temperature Range T
J
,T
S
T
G
-55 to +150 ¢J
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
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-
-
NOTE:
1.Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener
voltage of ¡Ó5%.
2.Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3.Zener Voltage (VZ) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining
the lead temperature (TL) at 30 ¢J¡Ó1¢J, from the diode body.
4.Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when
an ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK.
5.Surge Current (Ir) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak,
non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second
duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability
is as described in Figure 5.
RATING AND CHARACTERISTICS CURVES
1N4741A THRU 1M200Z
1.25
1.0
0.75
0.50
0.25
0
0 20 40
80
100
120
140
160
180
200
L = LEAD LENTGH TO
HEAT SINK
T
L
,
L
E
A
D
T
E
M
P
E
R
A
T
U
R
E
Fig. 1-POWER TEMPERATURE DERATING CURVE
RANGE
+12
+10
+8
+6
+4
+2
0
-2.
-4.
2
3
4
5
6
7
8
9 10
11
12
V
Z
@
I
ZT
V
Z
,
Z
E
N
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
10 20 30
70
RANGEV
Z
@ I
ZT
V
Z
,
Z
E
N
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Fig. 2-TEMPERATURE COEFFICIENTS
(-55 ¢J TO +150 ¢J TEMPERATURE RANGE; 90% OF THE UNITS ARE IN THE RANGES INDICATED.)
175
150
125
100
75
50
25
0
0 .1 .2 .3 .4 .5 .6 .7 .8 .9 1.0
L, LEAD LENGTH TO HEAT SINK (INCKES)
20mA
+6.0
+4.0
+2.0
0
-2.0
-4.0
3
4
5
6
7
V
Z
@ I
ZT
TA = 25¢J
1.0mA
0
.
0
1
m
A
N
O
T
E
:
B
E
L
O
W
3
V
O
L
T
S
A
N
D
A
B
O
V
E
8
C
H
A
N
G
E
S
I
N
Z
E
N
E
R
C
U
R
R
E
N
T
D
O
A
F
F
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C
T
T
E
M
P
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R
A
T
U
R
E
V
Z
,
Z
E
N
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Fig. 3-TYPICAL THERMAL RESISTANCE VERSUS LEAD
LENTGHFig. 4-EFFECT OF ZENER CURRENT
P
D, MAXIMUM POWER DISSIPATION
(WATTS)
£K
VZ, TEMPERATURE COEFFICIENT
(mV/¢J)
£KVZ, TEMPERATURE
COEFFICIENT(mV/W)
£K
JL, JUNCTION TO LEAD THERMAL
RESISTANCE (¢J/W)
£K
VZ, TEMPERATURE COEFFICIENT
(mV/w)
RATING AND CHARACTERISTICS CURVES
1N4741A THRU 1M200Z
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
11V-91V NON-REPETITIVE
0.8V-10V NON-REPETITIVE
5% DUTY CYCLE
10% DUTY CYCLE
20% DUTY CYCLE
RECTANGULAR WAVEFORM
T
J
=
2
5
¢J
P
R
I
O
R
T
O
I
N
I
T
I
A
L
PULSE
P
W
,
P
U
L
S
E
W
I
D
T
H
T
h
i
s
g
r
a
p
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p
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s
e
n
t
s
9
0
p
e
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c
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n
t
i
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d
a
t
a
p
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.
F
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w
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s
t
-
c
a
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d
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s
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n
c
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a
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c
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t
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c
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,
m
u
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t
i
p
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y
s
u
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p
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w
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r
b
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2
/
3
Fig. 5-MAXIMUM SURGE POWER
1000
500
200
100
50
20
10
5.0
2.0
1.0
0.1
0.2 0.5
1.0
2.0 5.0
10
20
50 100
47V
2
7
V
0.8V
TJ = 25¢J
I
Z
(ms) = 0.1I
Z
(dc)
f = 60Hz
I
Z
,
Z
E
N
E
R
C
U
R
R
E
N
T
(
m
A
)
1
000
700
500
200
100
70
50
20
10
7
5
2
1
1.0 2.0 3.0 5.0 7.0 10 20 30
TJ = 25¢J
I
Z
(ms) = 0.1I
Z
(dc)
f
=
6
0
H
z
I
Z
= 1.0mA
5.0mA
2
0
m
A
I
Z
,
Z
E
N
E
R
C
U
R
R
E
N
T
(
m
A
)
Fig. 6-EFFECT OF ZENER CURRENT ON ZENER
IMPEDANCEFig. 7-EFFECT OF ZENER VOLTAGE ON ZENER
IMPEDANCE
Ppk, peak surge power (watts)
Zz, dynamic impedance (ohms)
Zz, dynamic impedance (ohms)
RATING AND CHARACTERISTICS CURVES
1N4741A THRU 1M200Z
400
300
200
100
10
8
4
1.0 10
0V BIAS
1
.
0
V
B
I
A
S
50% OF BREAKDOWNV BIAS
V
Z
,
F
O
R
W
A
R
D
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Fig. 9-TYPICAL CAPACITANCE VERSUS VZ
10000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7.0
5.0
2.0
1.0
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.0013.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15
+
2
5
¢J
+125¢J
T
Y
P
I
C
A
L
L
E
A
K
A
G
E
C
U
R
R
E
N
T
A
T
8
0
%
O
F
M
O
N
I
M
A
L
BREAKDOWN VOLTAGE
V
Z
,
N
O
M
I
N
A
L
Z
E
N
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Fig. 8-TYPICAL LEAKAGE CURRENT
1000
500
200
100
50
20
10
5.0
2.0
1.0
0.4 0.5 0.6 0.7 0.8 0.9
MINMUM
MAXMUM
1
5
0
¢J
70
¢J
25¢J
0¢J
V
F
,
F
O
R
W
A
R
D
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Fig. 10-TYPICAL FORWARD CHARACTERISTICS
IR, LEAKAGE CURRENT (uA)
IF, FORWARD CURRENT(mA) C, capacitance (pF)