© 2006 IXYS All rights reserved DS99559E(01/06)
PolarHVTM HiPerFET
Power MOSFET
VDSS = 600 V
ID25 =82 A
RDS(on)
75 m
trr
200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 3 mA 600 V
VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 1000 µA
RDS(on) VGS = 10 V, ID = IT, Note 1 75 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C; RGS = 1 M600 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C72A
IDM TC= 25°C, pulse width limited by TJM 200 A
IAR TC= 25°C82A
EAR TC= 25°C 100 mJ
EAS TC= 25°C5J
dv/dt IS I
DM, di/dt 100 A/µs, VDD V
DSS, 20 V/ns
TJ 150°C, RG = 2
PDTC= 25°C 1040 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS, T = 1 min 2500 V~
IISOL 1 mA, T = 1 s 3000 V~
MdMounting torque, Terminal connection torque 1.5/13 lb.in.
Weight 30 g
IXFN 82N60P
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 82N60P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = IT, Note 1 50 80 S
Ciss 23 nF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1490 pF
Crss 200 pF
td(on) 28 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = IT23 ns
td(off) RG= 1 (External) 79 ns
tf24 ns
Qg(on) 240 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT96 nC
Qgd 67 nC
RthJC 0.12 °C/W
RthCS 0.13 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 82 A
ISM Repetitive 200 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 25A, -di/dt = 100 A/µs 200 ns
QRM VR = 100V 0.6 µC
IRM 6.0 A
Notes:
1. Pulse test, t 300 µs, duty cycle d 2 %
Test Current IT = 41A
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
SOT-227B Outline
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© 2006 IXYS All rights reserved
IXFN 82N60P
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
90
00.511.522.533.544.555.56
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
5V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 101214161820
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
80
90
02468101214
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 4. RDS(on) Normalized to ID = 41A Value
vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 82A
I
D
= 41A
Fig. 5. RDS(on) Normalized to ID = 41A Value
vs. Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
ID - Amperes
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 82N60P
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
110
120
3.544.555.566.57
VGS - Volts
ID - Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
0 20406080100120140
ID - Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
25
50
75
100
125
150
175
200
225
250
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
VSD - Volts
IS - Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200 225 250
QG - NanoCoulombs
VGS - Volts
V
DS
= 300V
I
D
= 41A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
VDS - Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10 100 1000
VDS - Volts
ID - Amperes
TJ = 150ºC
TC = 25ºC
25µs
1ms
100µs
RDS(on) Limit
10ms
DC
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© 2006 IXYS All rights reserved
IXFN 82N60P
Fig. 13. Maximum Transient Thermal Resistance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
(th)JC
- ºC / W
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