
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 82N60P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = IT, Note 1 50 80 S
Ciss 23 nF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1490 pF
Crss 200 pF
td(on) 28 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = IT23 ns
td(off) RG= 1 Ω (External) 79 ns
tf24 ns
Qg(on) 240 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT96 nC
Qgd 67 nC
RthJC 0.12 °C/W
RthCS 0.13 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 82 A
ISM Repetitive 200 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 25A, -di/dt = 100 A/µs 200 ns
QRM VR = 100V 0.6 µC
IRM 6.0 A
Notes:
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Current IT = 41A
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
SOT-227B Outline
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