IXFN82N60P - IXYS - Datasheet.Directory

PolarHVTM HiPerFET

Power MOSFET

VDSS = 600 V

ID25 =82 A

RDS(on) ≤≤

≤≤

≤75 mΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤200 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0 V, ID = 3 mA 600 V

VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V

IGSS VGS = ±30 VDC, VDS = 0 ±200 nA

IDSS VDS = VDSS 25 µA

VGS = 0 V TJ = 125°C 1000 µA

RDS(on) VGS = 10 V, ID = IT, Note 1 75 m Ω

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 600 V

VDGR TJ= 25°C to 150°C; RGS = 1 MΩ600 V

VGSS Continuous ±30 V

VGSM Transient ±40 V

ID25 TC= 25°C72A

IDM TC= 25°C, pulse width limited by TJM 200 A

IAR TC= 25°C82A

EAR TC= 25°C 100 mJ

EAS TC= 25°C5J

dv/dt IS≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ V

DSS, 20 V/ns

TJ≤ 150°C, RG = 2 Ω

PDTC= 25°C 1040 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6 mm (0.062 in.) from case for 10 s 300 °C

VISOL 50/60 Hz, RMS, T = 1 min 2500 V~

IISOL ≤ 1 mA, T = 1 s 3000 V~

MdMounting torque, Terminal connection torque 1.5/13 lb.in.

Weight 30 g

IXFN 82N60P

G

D

S

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate D = Drain

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

Features

•International standard package

•Encapsulating epoxy meets

UL 94 V-0, flammability classification

•miniBLOC with Aluminium nitride

isolation

•Low RDS (on) HDMOSTM process

•Rugged polysilicon gate cell structure

•Unclamped Inductive Switching (UIS)

rated

•Low package inductance

•Fast intrinsic Rectifier

Applications

•DC-DC converters

•Synchronous rectification

•Battery chargers

•Switched-mode and resonant-mode

power supplies

•DC choppers

•Temperature and lighting controls

•Low voltage relays

Advantages

•Easy to mount

•Space savings

•High power density

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN 82N60P

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

gfs VDS = 20 V; ID = IT, Note 1 50 80 S

Ciss 23 nF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1490 pF

Crss 200 pF

td(on) 28 ns

trVGS = 10 V, VDS = 0.5 VDSS, ID = IT23 ns

td(off) RG= 1 Ω (External) 79 ns

tf24 ns

Qg(on) 240 nC

Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT96 nC

Qgd 67 nC

RthJC 0.12 °C/W

RthCS 0.13 °C/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

ISVGS = 0 V 82 A

ISM Repetitive 200 A

VSD IF = IS, VGS = 0 V, Note 1 1.5 V

trr IF = 25A, -di/dt = 100 A/µs 200 ns

QRM VR = 100V 0.6 µC

IRM 6.0 A

Notes:

1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Test Current IT = 41A

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

SOT-227B Outline

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IXFN 82N60P

Fig. 1. Output Characteristics

@ 25ºC

0

10

20

30

40

50

60

70

80

90

00.511.522.533.544.555.56

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

5V

7V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

160

180

0 2 4 6 8 101214161820

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 3. Output Characteristics

@ 125ºC

0

10

20

30

40

50

60

70

80

90

02468101214

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 4. RDS(on) Normalized to ID = 41A Value

vs. Junction Temperature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 82A

I

D

= 41A

Fig. 5. RDS(on) Normalized to ID = 41A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

0 20 40 60 80 100 120 140 160 180

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

10

20

30

40

50

60

70

80

-50 -25 0 25 50 75 100 125 150

TJ - Degrees Centigrade

ID - Amperes

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN 82N60P

Fig. 7. Input Admittance

0

10

20

30

40

50

60

70

80

90

100

110

120

3.544.555.566.57

VGS - Volts

ID - Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

140

160

0 20406080100120140

ID - Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

25

50

75

100

125

150

175

200

225

250

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

VSD - Volts

IS - Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 25 50 75 100 125 150 175 200 225 250

QG - NanoCoulombs

VGS - Volts

V

DS

= 300V

I

D

= 41A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

VDS - Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

1

10

100

1,000

10 100 1000

VDS - Volts

ID - Amperes

TJ = 150ºC

TC = 25ºC

25µs

1ms

100µs

RDS(on) Limit

10ms

DC

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IXFN 82N60P

Fig. 13. Maximum Transient Thermal Resistance

0.001

0.010

0.100

1.000

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

R

(th)JC

- ºC / W

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