oMOTOROU
SEMICONDUCTOR TECHNICAL DATA Orderthls document
by 2N3019SJANID
2N3019SJAN, dTX, dTXV, dANS ttl
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2N3700dAN, JTX, JTXV, JANS *t~i”*J,:~$<
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Processedper MlL4-19500/391 lb
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NPN Silicon
Small+ignal Transistors *,. k
$f$,omhlal PlmTachnologiesOperstlon
1...,,,.
-- 1..,. !.. I
-.” I
>>, II
OFFCMRACTERl*i+S
Collectcr+mitt~Mdow Vokge(l) v(BR)CEO
(1C=30mA@~>, ‘“
v(BR)EBO
V(BR)CBO
@$ll@orCutoffCurrent iCES
~CE =goVdo)
WCE-90 V*, TA=1500C)
EmitterCutoffCurrent lEBO
NBE =5.0Vdc)
80 Vdo
7.0 Vdc
140 Vdc
10 nAdc
10 @do
10 nAdc
(1)Pulsed.PulseWidth250to 350@, D@ Qcle 1.0to 2.0%. (ccntinu*
oRN O
9/s3
2N3019S
CASE7%04,S~LE 1
T0205AD ~039)
2N3700
CASE22-03,SWLE 1
T0206AA ~G18)
@M-ROLA
@Mdomla, Inc.1994
2N3019S and 2N3700 SERIES
ELECTRICAL CHARACTERISTICS mntinued UC. 25’C unlessothewise noted.)
Characterlatlc S~bol IMin IMex IUnit
]ON CHARACTERISTICS
DCCurrentGain
~CE =10Vdo,IC=150mAdc)(l) h~E
~CE =10Vdc, IC =0.1mAdc)
~CE”loV*,lC=lOW&)(l)
NCE =10V*, ic =500MA*)(1)
~CE=lo Vti,lC=l.oti&)
~CE =10VdO,IC=150tido, TA=-65”C)(1)
Colleotor%mitterSaturationVobge(l) VCE(~t)
(IC= 150tid0, IB= 15~&)
(IC=500@de, lB=50titi)
BasHm.tir Saturation Vohge(l) VBE(~at)
(tC= 150~d0, iB= 15tidO)
SMALL41GNAL CHARACTERISTICS
100
50
90
50
15
40
...
Smal%ignat CurrentGain .,’
he *><,...sj.,t::
!,ij~:~
~CE =5.0V*, ic =1.0fide, f=1.0kHz)
NCE =10Vdo,!C=50tide, f=20MHz) ,%,q$;;g,.
,..,..
InputCapaoitanm q~ ,,3>}~tv,> -
NEB =0.5 Vdo,IC=O,f=0.1to 1.0MHz) sf:~,,,>,.,,
‘v’!>.
OutputCepac.@n@ c&JL, ‘—
~CB=lov*tlE=ojf=o.l tO1.oMHz) $.,,,,,,
,,$!,’.+,..
,./,,
,.?
400
20
4.0 dB
ColleotorBaseWmeConstant “i:,.,.
~;~~:\.., ~’c~
~CB =10V*, ic =10MA*, f=79.8MHz) 400
i’ P
/\\>\,XI,;,
SWtTCHING CHARACTERISTICS (Sge S@on 4,,.&$&~~
..- -. .,*..
ASSURANCE TESTING (PrdPo@iMn)
,, Bum4n Conditions TA =25 y~$ ?CB =60Vdc (10 Vdc,JANS)j PD =600 mW 2N301*, 500 mW 2N3700
,.-..,..s....!,J*
..\*\
..1
}.!>~tsInitial and End Point Llmlte
,F.’,+..‘*>:,;,$s~
CharactarIaU~f*ed Spbol Mln Max Unit
Coll@r CutoffCurre#J<. iCES
~CE =goV*) $;,~&,~&- 10 nAdo
DC Current G&~ hFE
~CE =1$.~AY~ =150mAda) 100 300
,~%?,t
‘1$,1,
,~~...
..>.
,.,.
m~f Pr*um4n Measured Values Mln Max
wJ~ll*or CutoffCurrent AtCES *100 Yo of InitialValue
~.$:?:., or6.0
JI!3 nAdo
whicheverisgreater
DeltaDCCurrentGain(l) AhFE *15 YO of InitialValue
(1)Putsed.PulseWidth250to 350 W, DW Qcte 1.0to2.0%.
COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA
.
,. .,-
2N3019S and 2N3700 SERIES
@PACWGE DIMENSIONS
4mTEs
fill
1.DIMENSONlffi ANDWWNG PER ANSI
Y14.W, 1*
Z-WNG DIMENSW: IW.
&DIMJ MWURED FROMDIMAWMUM
=?’
4. DIMFWPUES ~EEN DIMPAND LDIMD
APWES B~EENDIM LAND KMINIMUM
LEADW~R IS UN~~ IN DM P
ANDWOND MM KMNIMUM
—--~ K,*!.
‘$,\
MLU=RS INMES ?*.!
TI
31
CASE Z43
TW6AA
agdnafdl Clalms.ooate,damages, Wexpenses, ti rmtie attOMSyfeesarisingoutof, dirtily or Indirwly, any ddm of psreow inju~ or death
-at@ wh uchunintended or unauthotied use,even Ifeuti Mm aNqea that Motorola wae neg~gentregardingthe design or manufa~re ofthe pan.
Motorola and @are registered tre&m@ of Motorola Irro.Motoml~ Ino.Isen EqW OppotinNy/AffirmativeAotionEmpbyer.
LlteratumDIMbutlorr Centen
USAMotorola LNeratureDiatributio~ P.O.Box2W12; Phrrk, Arizona m.
EUROPE Motorok Ltd.; European Mereture OentrS SSTanners Drive,Bl*e W, Milton Keyn=, MK14 5BP,England.
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ASIA PACIFIC Motorola Semtitiuotore H.K. Ltd.;Siltin H-r Oenter,No.2Dd King Street, T~ Po Industtid Estate, Tai Po, N.T.,Hong Kong.
@M~ROLA 1PHX24101 1-2 PRINWD IN USA U% MPWPOO CPTO YDACAA 2N3019SJANID
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