2N3700JTXV - Motorola / Freescale Semiconductor

oMOTOROU

SEMICONDUCTOR TECHNICAL DATA Orderthls document

by 2N3019SJANID

2N3019SJAN, dTX, dTXV, dANS ttl

r~ ~‘~~

,$$>.

2N3700dAN, JTX, JTXV, JANS *t~i”*J,:~$<

>,,.

j/ >,,.!$:

,.>

1111~~

~~‘‘}1

~>‘

Processedper MlL4-19500/391 lb

“,,.,

,$&,li ;f

I\o

NPN Silicon

Small+ignal Transistors *,. k

$f$,omhlal PlmTachnologiesOperstlon

1...,,,.

-- 1..,. !.. I

-.” I

“>>, II

OFFCMRACTERl*i+S

Collectcr+mitt~Mdow Vokge(l) v(BR)CEO

(1C=30mA@~>, ‘“

v(BR)EBO

V(BR)CBO

@$ll@orCutoffCurrent iCES

~CE =goVdo)

WCE-90 V*, TA=1500C)

EmitterCutoffCurrent lEBO

NBE =5.0Vdc)

80 —Vdo

7.0 —Vdc

140 —Vdc

—10 nAdc

—10 @do

—10 nAdc

(1)Pulsed.PulseWidth250to 350@, D@ Qcle 1.0to 2.0%. (ccntinu*

oRN O

9/s3

2N3019S

CASE7%04,S~LE 1

T0205AD ~039)

2N3700

CASE22-03,SWLE 1

T0206AA ~G18)

@M-ROLA

@Mdomla, Inc.1994

2N3019S and 2N3700 SERIES

ELECTRICAL CHARACTERISTICS — mntinued UC. 25’C unlessothewise noted.)

Characterlatlc S~bol IMin IMex IUnit

]ON CHARACTERISTICS

DCCurrentGain

~CE =10Vdo,IC=150mAdc)(l) h~E

~CE =10Vdc, IC =0.1mAdc)

~CE”loV*,lC=lOW&)(l)

NCE =10V*, ic =500MA*)(1)

~CE=lo Vti,lC=l.oti&)

~CE =10VdO,IC=150tido, TA=-65”C)(1)

Colleotor%mitterSaturationVobge(l) VCE(~t)

(IC= 150tid0, IB= 15~&)

(IC=500@de, lB=50titi)

BasHm.tir Saturation Vohge(l) VBE(~at)

(tC= 150~d0, iB= 15tidO)

SMALL41GNAL CHARACTERISTICS

100

—

...

Smal%ignat CurrentGain .,’

he *><,...sj.,t::

!,ij~:~

~CE =5.0V*, ic =1.0fide, f=1.0kHz)

NCE =10Vdo,!C=50tide, f=20MHz) ,%,q$;;g,. ‘

,..,..“

InputCapaoitanm q~ ,,3>}~tv,> -

NEB =0.5 Vdo,IC=O,f=0.1to 1.0MHz) sf:~,,,>,.,,

‘v’!>.

OutputCepac.@n@ c&JL, ‘‘—

~CB=lov*tlE=ojf=o.l tO1.oMHz) $.,,,,,,

,,$!,’.+,..

,./,,

,.?

—

400

4.0 dB

ColleotorBaseWmeConstant “i:,.,.

~;~~:\.., ~’c~ —

~CB =10V*, ic =10MA*, f=79.8MHz) 400

i’ P

/\\>\,XI,;,

SWtTCHING CHARACTERISTICS (Sge S@on 4,,.&$&~~

..- -. .,*..

ASSURANCE TESTING (PrdPo@iMn)

,, Bum4n Conditions TA =25 y~$ ?CB =60Vdc (10 Vdc,JANS)j PD =600 mW 2N301*, 500 mW 2N3700

,.-..,..s....!,J*

..\*\

..1

}.!>~tsInitial and End Point Llmlte

,F.’,+..‘*>:,;,$s~

CharactarIaU~f*ed Spbol Mln Max Unit

Coll@r CutoffCurre#J<. “iCES

~CE =goV*) $;,~&,~&- —10 nAdo

DC Current G&~ hFE

~CE =1$.~AY~ =150mAda) 100 300 —

,~%?,t

‘1$,1,

,~~...

..>.

,.,.

m~f Pr*um4n Measured Values Mln Max

wJ~ll*or CutoffCurrent AtCES —*100 Yo of InitialValue

~.$:?:., or6.0

JI!3 nAdo

whicheverisgreater

DeltaDCCurrentGain(l) AhFE *15 YO of InitialValue

(1)Putsed.PulseWidth250to 350 W, DW Qcte 1.0to2.0%.

COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA

,. .,-

2N3019S and 2N3700 SERIES

@PACWGE DIMENSIONS

4mTEs

fill

1.DIMENSONlffi ANDWWNG PER ANSI

Y14.W, 1*

Z-WNG DIMENSW: IW.

&DIMJ MWURED FROMDIMAWMUM

=?’

4. DIMFWPUES ~EEN DIMPAND LDIMD

APWES B~EENDIM LAND KMINIMUM

LEADW~R IS UN~~ IN DM P

ANDWOND MM KMNIMUM

—--~ K,*!.

‘$,\

MLU=RS INMES ?*.!

CASE Z43

TW6AA

agdnafdl Clalms.ooate,damages, Wexpenses, ti rmtie attOMSyfeesarisingoutof, dirtily or Indirwly, any ddm of psreow inju~ or death

-at@ wh uchunintended or unauthotied use,even Ifeuti Mm aNqea that Motorola wae neg~gentregardingthe design or manufa~re ofthe pan.

Motorola and @are registered tre&m@ of Motorola Irro.Motoml~ Ino.Isen EqW OppotinNy/AffirmativeAotionEmpbyer.

LlteratumDIMbutlorr Centen

USAMotorola LNeratureDiatributio~ P.O.Box2W12; Phrrk, Arizona m.

EUROPE Motorok Ltd.; European Mereture OentrS SSTanners Drive,Bl*e W, Milton Keyn=, MK14 5BP,England.

JAPAN Mppon Motorola Ltd.;~2-1, NishWo_ ShinagawX, T*o 141, Japan.

ASIA PACIFIC Motorola Semtitiuotore H.K. Ltd.;Siltin H-r Oenter,No.2Dd King Street, T~ Po Industtid Estate, Tai Po, N.T.,Hong Kong.

@M~ROLA 1PHX24101 1-2 PRINWD IN USA U% MPWPOO CPTO YDACAA 2N3019SJANID

llllllllllllllllllllllllllllllllllllllllllllllllllllllllllll