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Silicon Power Transistor
TO-220
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
Plastic medium-power Silicon Transistors designed for general purpose amplifier and low speed switching applications
Dimensions Millimetres
Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.96
J 1.14 1.38
K 2.2 2.97
L 0.33 0.55
M 2.48 2.98
O 3.7 3.9
Maximum Ratings
Characteristics Symbol TIP117 Unit
Collector-Emitter Voltage VCEO 100 V
Collector-Emitter Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous
Peak
IC
ICM
2
4A
Base Current IB50 mA
Total Power Dissipation at Tc= 25°C
Derate above 25°C PD50
0.4
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
Features:
•Collector-Emitter Sustaining Voltage -
VCE(SUS) = 100 V (Minimum) TIP117
•Collector-Emitter Saturation Voltage
VCE(Sat) = 2.5 V (Maximum) at IC = 2 A
•Monolithic Construction with Built-in Base-Emitter Shunt Resistor
Silicon Power Transistor
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Characteristics Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 2.5 °C/W
Maximum Ratings
Electrical Characteristics (Tc = 25°C Unless Otherwise Noted)
Figure 1 Power Derating
PD, Power Dissipation (Watts)
TC, Temperature (°C)
Characteristics Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1) VCEO(SUS) 100 V
Collector Cutoff Current
(VCE = 50 V, IB= 0) ICEO 2 mA
Collector Cutoff Current
(VEB = 5 V, IC= 0) IEBO 2 mA
Dynamic Characteristics
Small-Signal Current Gain
(Ic= 0.75 A, VCE = 10 V, f = 1 MHz) hfe 25
Output Capacitance Cob 150 PF
ON Characteristics (1)
DC Current Gain
(IC= 1 A, VCE = 4 V)
(IC= 2 A, VCE = 4 V)
hFE 1,000
500
Collector-Emitter Saturation Voltage
(IC= 2 A, IB= 8 mA) VCE(Sat) 2.5 V
Base-Emitter On Voltage
(IC= 2 A, VCE = 4 mA) VBE(ON) 2.8 V
(1) Pulse Test : Pulse Width = 300 us, Duty Cycle ≤ 2%
Silicon Power Transistor
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Internal Schematic Diagram
Fig-1 Switching Time
Fig-2 Capacitances
IC, Collector Current (A)
VR, Reverse Voltage (Volts)
t, Time (us)
Capacitances (pF)
PNP
Silicon Power Transistor
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Fig-3 Active Region Safe Operating Area
IC, Collector Current (A)
VCE, Collector Emitter Voltage (Volts)
There are two limitation on the power handling ability of a transistor : average junction temperature and second breakdown safe
operating area curves indicate Ic~ VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must
not be subjected to greater dissipation than curves indicate.
The data of Fig-3 is base on TJ(PK)=150°C; TC is variable depending on power level, second breakdown pulse limits are valid for
duty cycles to 10% provided TJ(PK)≤150°C, at high case temperatures, thermal limitation will reduce the power that can be handled
to values less than the limitations imposed by second breakdown.
Part Number Table
Description Part Number
Silicon Power Transistor TIP117
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