ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
D
R
M
=
5200 V Phase Control Thyristor
5STP 17H5200
I
T(AV)M
=
1975 A
I
T(RMS)
=
3100 A
I
TSM
=
37×10
3
A
V
T0
=
1.02 V
r
T
=
0.32
W
Doc. No. 5SYA1049-05 Jul. 13
· Patented free-floating silicon technology
· Low on-state and switching losses
· Designed for traction, energy and industrial applications
· Optimum power handling capability
· Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Parameter
Symbol
Conditions
5STP 17H5200
Unit
Max. surge peak forward and
reverse blocking voltage VDSM,
VRSM
tp = 10 ms, f = 5 Hz
Tvj = 5…125 °C, Note 1 5200 V
Max repetitive peak forward
and reverse blocking voltage VDRM,
VRRM
f = 50 Hz, tp = 10 ms, tp1 = 250 ms,
Tvj = 5…125 °C, Note 1, Note 2 5200 V
Max crest working forward
and reverse voltages VDWM,
VRWM 3470 V
Crit ical rate of rise of
commutating voltage dv/dtcrit Exp. to 3470 V, Tvj = 125 °C 2000 V/µs
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward leakage curr ent IDRM VDRM, Tvj = 125 °C 400 mA
Rev erse leakage current IRRM VRRM, Tvj = 125 °C 400 mA
Note 1: Voltag e de-rating fact or of 0.11 % per °C is ap plicable for Tvj b elow +5 °C
Note 2: Rec omm ended mi nimum ratio of V DRM / VDWM or VRRM / VRWM = 2. See App. Note 5SYA 20 51.
Mechanical data
Maximum rated values 1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Mounting force FM45 50 60 kN
Acceleration a Devi ce unclamped 50 m/s2
Acceleration a Devi ce clamped 100 m/s2
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
Weight m 0.9 kg
Housing t hickness H FM = 50 kN, Ta = 25 °C 26.2 26.8 mm
Surface creepage distance DS36 mm
Air stri ke distance Da15 mm
1) Maximum rated valu es indicate li mits beyond which damag e to the device may occur
5STP 17H5200
ABB Switzerland Ltd, Semiconductors reserves the right to
change specifications without notice.
Do c. No. 5SYA1049-05 Jul. 13 page 2 of 7
On-state
Maximum rated values 1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70 °C 1975 A
RMS on-state current IT(RMS) 3100 A
Peak non-repetitiv e surge
current ITSM tp = 10 ms, Tvj = 125 °C,
sine half wave,
VD = VR= 0 V, after surge
37×103A
Limiting load in tegral I2t 6.85×106A2s
Peak non-repetitiv e surge
current ITSM tp = 10 ms, Tvj = 125 °C,
sine half wave,
VR= 0.6*VRRM, after surge
24.5×103A
Limiting load in tegral I2t 3×106A2s
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
On-state voltage VTIT = 2000 A, Tvj = 125 °C 1.68 V
Threshold voltage V(T0) IT = 1000 A - 3000 A, Tvj= 125 °C 1.02 V
Sl ope resistance r T0.32 mW
Holding cur rent IHTvj = 25 °C 80 mA
Tvj = 125 °C 60 mA
Latching cur rent ILTvj = 25 °C 600 mA
Tvj = 125 °C 200 mA
Switching
Maximum rated values 1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Critical rate of rise of on-
state cur rent di/dtcrit Tvj = 125 °C,
ITRM = 3000 A,
VD£ 0.67 VDRM,
IFG = 2 A, tr = 0.5 µs
Cont.
f = 50 Hz 200 A/µs
Critical rate of rise of on-
state cur rent di/dtcrit Cont.
f = 1 Hz 1000 A/µs
Circu it-commutated turn-off
time tq
Tvj = 125 °C, ITRM = 2000 A,
VR= 200 V, diT/dt = - 1.5 A /µs,
VD£ 0.67×VDRM, dvD/dt = 2 0 V/µ s 700 µs
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse recovery charge Qrr Tvj = 125 °C, ITRM = 2000 A,
VR= 200 V,
diT/dt = -1.5 A/µs
2600 4500 µAs
Reverse recovery current IRM 50 80 A
Gate turn-on delay time tgd Tvj = 25 °C, VD = 0.4×VRM, IFG = 2 A,
tr = 0.5 µs 3µs
5STP 17H5200
ABB Switzerland Ltd, Semiconductors reserves the right to
change specifications without notice.
Do c. No. 5SYA1049-05 Jul. 13 page 3 of 7
Triggering
Maximum rated values 1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Peak forward gate voltage VFGM 12 V
Peak forward gate current IFGM 10 A
Peak reverse gate voltage VRGM 10 V
Average gate power loss PG(AV) see Fig. 7 W
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-trigger voltage VGT Tvj = 25 °C 2.6 V
Gat e-trigger current IGT Tvj = 25 °C 400 mA
Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125 °C 0.3 V
Gat e non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125 °C 10 mA
Thermal
Maximum rated values 1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Operating junction
temperature r ange Tvj 125 °C
Storage temperature range Tstg -40 140 °C
Characteristic values
Parameter
Symbol
Conditions
min
typ
max
Unit
Therm al resistance juncti on
to case Rth(j-c) Double-si de cooled
Fm = 45...60 kN 10 K/kW
Rth(j-c)A Anode-si de cooled
Fm = 45...60 kN 20 K/kW
Rth(j-c)C Cathode-side cooled
Fm = 45...60 kN 20 K/kW
Therm al resistance case to
heatsink Rth(c-h) Double-side cooled
Fm = 45...60 kN 2K/kW
Rth(c-h) Singl e-side cooled
Fm = 45...60 kN 4K/kW
Analyti cal function for transient thermal
impedance:
)e-(1R=(t)Z n
1i
t/-
ic)-th(j å
=
i
t
i 1 2 3 4
Ri(K/kW) 6.520 1.550 1.670 0.490
ti(s) 0.4562 0.0792 0.0088 0.0037
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time
5STP 17H5200
ABB Switzerland Ltd, Semiconductors reserves the right to
change specifications without notice.
Do c. No. 5SYA1049-05 Jul. 13 page 4 of 7
Fig. 2 On-state voltage characteristics Fig. 3 On-state characteristics,
Tvj = 125 °C, 10 ms half si ne
Fig. 4 On-state power di ssipat ion v s. mean on-stat e
current, turn-on losses excluded Fig. 5 Max. permi ssibl e case tem perature v s. m ean
on-stat e current, switching losses ignored
5STP 17H5200
ABB Switzerland Ltd, Semiconductors reserves the right to
change specifications without notice.
Do c. No. 5SYA1049-05 Jul. 13 page 5 of 7
Fig. 6 Recommended gate current wav eform Fig. 7 Max. peak gate power loss
Fig. 8 Rev erse rec ov ery charge vs. decay rat e of
on-stat e current Fig. 9 Peak rev erse recovery current v s. decay rate
of on-state current
IGM
IGon
100 %
90 %
10 %
IGM » 2..5 A
IGon ³ 1.5 IGT
diG/dt ³ 2 A/ms
tr£ 1 ms
tp(IGM)» 5...20 ms
diG/dt
tr
tp(IGM)
IG(t)
t
tp(IGon)
5STP 17H5200
ABB Switzerland Ltd, Semiconductors reserves the right to
change specifications without notice.
Do c. No. 5SYA1049-05 Jul. 13 page 6 of 7
Turn-on and Turn-off losses
Fig. 10 Turn-on energy, half si nusoidal wav es Fig. 11 Turn-on energy, rectangular wav es
Fig. 12 Turn-off energy, half si nusoidal wav es Fig. 13 Turn-off energy, rectangul ar wav es
Total power loss for repetitive waveforms:
fWfWPP offonTTOT
×
+
×
+
=
where
dtIVI
T
PT
TTTT ò×=
0)(
1
Fig. 14 Current and v oltage waveforms at t urn-off Fig. 15 Rel ationships for power loss
Qrr
IT(t), V(t)
t
-diT/dt
IT(t)
-V0
-VRRM
V(t)
-IRRM
-dv/dtcom
5STP 17H5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1049-05 Jul. 13
Semiconductors
Fabrikstr asse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Fig. 16 Device Outline Drawing
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Pl ease r efer to http://ww w.abb.com/semiconduct ors for current version of docu ments .
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