JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAV199DW Multi-Chip DIODES SOT-363 FEATURES Power dissipation PCM: 0.2 W (Tamb=25) Collector current IF : 200 mA Collector-base voltage VR : 85 V Operating and storage junction temperature range TJ,Tstg: -55 to +150 MARKING:K52 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse breakdown voltage unless Symbol Test V(BR) R IR= 100A IR VR=75V Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA Junction capacitance Cj VR=0V Reverse voltage leakage current otherwise conditions specified) MIN TYP MAX 85 f=1MHz UNIT V 5 nA 0.9 1.0 1.1 1.25 V 2 pF IF=IR=10mA Reveres recovery time trr Irr=0.1IR RL=100 3 nS Typical Characteristics BAV199DW