CY62127DV18
MoBL2®
PRELIMINARY
Document #:38-05226 Rev.*A Page 3 of 11
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential.−0.2V to VCCMAX + 0.2V
DC Voltage Applied to Outputs
in High-Z State[3]....................................−0.2V to VCC + 0.2V
DC Input Voltage[3]................................−0.2V to VCC + 0.2V
Output Current into Outputs (LOW).......... ... ................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ............. .. ............................. .. ... ...> 200 mA
Operating Range
Notes:
3. VIL(min.) = −1.0V for pulse durations less than 20 ns., VIH(max.) = Vcc+0.5V for pulse durations less than 20 ns.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C.
5. Tested initially and after any design or proces changes that may af fect these parameters.
Range Ambient
Temperature (TA)V
CC
Industrial −40°C to +85°C 1.65V to 2.2V
Product Portfolio
Product VCC Range(V) Speed
(ns)
Power Dissipation
Operating, Icc (mA) Standby, ISB2 (µA)f = 1 MHz f = fMAX
Min. Typ. Max. Typ.[4] Max. Typ.[4] Max. Typ.[4] Max.
CY62127DV18L 1.65 1.8 2.2 55 0.5 1.5 3.75 7.5 0.5 5
CY62127DV18LL 55 0.5 1.5 3.75 7.5 0.5 4
DC Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions CY62127DV18-55 UnitMin. Typ.[4] Max.
VOH Output HIGH Voltage IOH = −0.1 mA 1.4 V
VOL Output LOW Voltage IOL = 0.1 mA 0.2 V
VIH Input HIGH Voltage 1.4 VCC + 0.2 V
VIL Input LOW Voltage −0.2 0.4 V
IIX Input Leakage Current GND < VI < VCC −1+1µA
IOZ Output Leakage Current GND < VO < VCC, Output Disabled −1+1µA
ICC VCC Operating Supply Cur-
rent f = fMAX = 1/tRC Vcc = 2.2V, IOUT =
0mA, CMOS level 3.75 7.5 mA
f = 1 MHz 0.5 1.5
ISB1 Automatic CE Power-down
Current − CMOS Inputs CE > VCC − 0.2V,
VIN > VCC − 0.2V, VIN < 0.2V,
f = fMAX (Address and Data Only),
f = 0 (OE, WE, BHE and BLE)
L0.55µA
LL 0.5 4
ISB2 Automatic CE Power-down
Current − CMOS Inputs CE > VCC − 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V,
f = 0, VCC=2.2V
L0.55µA
LL 0.5 4
Capacitance[5]
Parameter Description Test Con ditions Max. Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz
VCC = VCC(typ) 8pF
COUT Output Capacitance 8 pF
Thermal Resistance
Parameter Description Test Conditions FBGA TSOP II Unit
θJA Thermal Resistance (Junction to Ambient)[5] Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board 55 76 °C/W
θJC Thermal Resistance (Junction to Case)[5] 12 11 °C/W