PHOTODIODE Si PIN photodiode S9687 Si PIN photodiode for violet-laser detection S9687 is a Si PIN photodiode developed to detect light emitted from violet-laser diodes. S9687 features high sensitivity and high-speed response in the violet region. S9687 is smaller than the conventional type (S8910-01). Features Applications l Active area: 0.8 mm l Miniature chip carrier package: 3 x 4.5 x 1.5 t mm l High sensitivity: 0.3 A/W Typ. (=405 nm) l High-speed response: 500 MHz Typ. (VR=2.5 V) l Surface-mount package suitable for lead-free solder l Violet-laser diode monitor in optical disk drive (High-speed APC) l Violet-laser detection (=405 nm) Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 20 -25 to +85 -40 to +100 Unit V C C Electrical and optical characteristics (Ta=25 C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Symbol p S ID Cut-off frequency fc Terminal capacitance Ct Condition =405 nm VR=2.5 V VR=2.5 V, RL=50 =405 nm, -3 dB VR=2.5 V, f=1 MHz Min. 0.26 - Typ. 320 to 1000 760 0.3 0.01 Max. 0.3 Unit nm nm A/W nA 300 500 - MHz - 6 12 pF 1 Si PIN photodiode Spectral response S9687 Dark current vs. reverse voltage (Typ. Ta=25 C) 0.6 (Typ. Ta=25 C) 1 nA QE=100 % PHOTO SENSITIVITY (A/W) 0.5 DARK CURRENT 100 pA 0.4 0.3 0.2 10 pA 1 pA 0.1 0 200 400 600 800 1000 100 fA 0.01 1200 0.1 WAVELENGTH (nm) 1 10 100 REVERSE VOLTAGE (V) KPINB0285EB KPINB0286EA Terminal capacitance vs. reverse voltage (Typ. Ta=25 C, f=1 MHz) 10 pF 1 pF 0.1 (Typ. Ta=25 C, RL=50 ) 1000 CUT-OFF FREQUENCY (MHz) 100 pF TERMINAL CAPACITANCE Cut-off frequency vs. reverse voltage 500 100 1 10 100 1 5 REVERSE VOLTAGE (V) 10 REVERSE VOLTAGE (V) KPINB0287EA Dimensional outline (unit: mm) KPINB0288EA 1.5 0.15 0.5 4.5 1.0 1.25 2.0 1.25 (1.9) 0.85 3.0 1.0 1.0 PHOTOSENSITIVE SURFACE NC CATHODE NC NC ANODE NC CERAMIC (0.25) (0.25) (6 x) R0.2 (6 x) 0.5 AR GLASS ACTIVE AREA 0.8 Tolerance unless otherwise noted: 0.1 Chip position accuracy with respect to the package center X, Y0.2, 2 KPINA0100EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1071E02 Jan. 2006 DN