S9687 is a Si PIN photodiode developed to detect light emitted from violet-laser diodes. S9687 features high sensitivity and high-speed response
in the violet region. S9687 is smaller than the conventional type (S8910-01).
Features
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Active area: φ0.8 mm
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Miniature chip carrier package: 3 × 4.5 × 1.5 t mm
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High sensitivity: 0.3 A/W Typ. (λ=405 nm)
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High-speed response: 500 MHz Typ. (VR=2.5 V)
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Surface-mount package suitable for lead-free solder
Applications
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Violet-laser diode monitor in optical disk drive
(High-speed APC)
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Violet-laser detection (λ=405 nm)
PHOTODIODE
Si PIN photodiode
Si PIN photodiode for violet-laser detection
S9687
1
■Absolute maximum ratings
Parameter Symbol Value Unit
Reverse voltage VR Max. 20 V
Operating temperature Topr -25 to +85 °C
Storage temperature Tstg -40 to +100 °C
■ Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range λ- 320 to 1000 - nm
Peak sensitivity wavelength λp-760 -nm
Photo sensitivitySλ=405 nm0.26 0.3 -A/W
Dark current IDVR=2.5 V -0.01 0.3 nA
Cut-off frequency fc VR=2.5 V, RL=50 Ω
λ=405 nm, -3 dB 300 500 -MHz
Terminal capacitance Ct VR=2.5 V, f=1 MHz - 6 12 pF
Si PIN photodiode
S9687
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
Cat. No. KPIN1071E02
Jan. 2006 DN
2
KPINB0285EB
■ Spectral response
■ Dimensional outline (unit: mm)
0
200
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
400 600 800 1000 1200
0.1
0.2
0.3
0.4
0.6
0.5
(Typ. Ta=25 ˚C)
QE=100 %
KPINB0286EA
■ Dark current vs. reverse voltage
100 fA
0.01
REVERSE V OLTAGE (V)
DARK CURRENT
0.1 1 10 100
1 pA
10 pA
100 pA
1 nA (Typ. Ta=25 ˚C)
KPINB0287EA
■ Terminal capacitance vs. reverse voltage
1 pF
0.1
REVERSE V OLTAGE (V)
TERMINAL CAPACITANCE
1 10 100
10 pF
100 pF (Typ. Ta=25 ˚C, f=1 MHz)
KPINB0288EA
■ Cut-off frequency vs. reverse voltage
100
500
15
REVERSE V OLTAGE (V)
CUT-OFF FREQUENCY (MHz)
10
1000 (Typ. Ta=25 ˚C, RL=50 Ω)
KPINA0100EA
4.5
CERAMIC
0.85
(0.25) (0.25)
0.5 1.0
1.5 ± 0.15
ACTIVE AREA
0.8
AR GLASS
PHOTOSENSITIVE
SURFACE
2.01.25 1.25
1.0
(6 ×) 0.5
1.0
(6 ×) R0.2
NC
CATHODE
NC
NC
ANODE
NC
(1.9)
3.0
Tolerance unless otherwise noted: ±0.1
Chip position accuracy with respect to the
package center
X, Y≤±0.2, θ≤±2˚
