SELECTION GUIDE VI-1 IGBT MODULE MATRIX (HIGH SPEED TYPE) CONNECTION MAXIMAM RATING CIRCUIT SYMBOL|VCES.V' IC A) 8 15 25 50 75 100 150 200 300 400 600 \T8J101 61184101 gt255101/GTS0I101 gTisy102 |@ g 5 BS 6T150101\GT2501016 1200|cT8a101 & Bet Ts, |MG5OQ1BS1 MG400J1US1 600 MG300J1US1| freanoy jst a US MG50001US1* wG300a1ust |MG40001 ust 1200 500A) MG20001US1 " MG50001US2* wG30001US2 /MG40001US2 600 MG25J2S1 |MG5OU2YS1 |MG75U2vS1 |MG100J2S1IMG1S0U2S1 |MGz00U2vS1 |MMG300J2VS1 oa MG25J2S9 |MG5OJ2VS9 [MG75J2S9 |MG100J2VS9|MG150J2vS2* |MG200U2S2* |MG30qJ2vSa* Ys MG10002S1 |mG15002vS1 |mG20002vs1 | , 1200 MG15Q2S9_MG2502vs9 |M@50Q2vS9 |MG75Q2VS1 [fre rooaaveg" | Meteonavee" (Mcauodavs9* eset ps |1200 WG75020S1* 7 ] ma ole olf GOO |MG8J6ES1 |MG15J6ES1/ MG25J6ES1| MG5OJ6ES1| MG75J6ES1|MG100./ES1 [3 ES old ol ote 1200|MG806ES1 |MG1506ES1 |MG2506ES1 IMG5006ES! @:NON ISOLATED TYPE (TO-3PN.TO-3PL) SELECTION GUIDE VI-2 IGBT MODULE MATRIX (LOW SATURATION TYPE) *,UNDER DEVELOPMENT CONNECTION MAXIMAM RATING 1 CIRCUIT SYMBOL VCES'V) CtA) 8 15 25 50 75 100 150 200 300 400 600 WG15J1BS11* |MG25J1BS11* |MG50J18S11* |MG75u1BSt1* IMG100J1BS11 oJ BS 1200 MG1501BS11*/MG25018S11 |MG5OQ1BS11 /MG7501BS11* MG400J1US11 600 MG400J1US21 | US MG50001US11* MG30001US11|MG4o0q1USt1 1200 (500A) MG20001US11 mGs0001US21* 630001021 | MG4ooalus21 I 600 MG25J2vS91* |MGsQu2vsa1 |MG75v2vs91 |MG100J2vS91 |MGts0u2vS11 |MG200J2vS11 /mG30QU2vS11 YS ~r 1200 MG25Q2S91" MIG5002S91 | NIG7BCZYS11 Ae ee ne ee eae ZS |1200 wG25022811* |mGs0a2z811* MG5OJ6ES11 . |MGt00u6es11 oR ob olf 600 wg5oveesar |MG75J6EST1* lic gq JgESo1 2 | ES ol old oltt 1200 MG50Q6ES11 *, UNDER DEVELOPMENT