© 2014 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 3600 V
VCGR TJ = 25°C to 150°C, RGE = 1M 3600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 125 A
IC110 TC = 110°C 50 A
ICM TC = 25°C, 1ms 420 A
SSOA VGE = 15V, TVJ = 125°C, RG = 5 ICM = 200 A
(RBSOA) Clamped Inductive Load 0.8 VCES V
TSC VGE = 15V, TJ = 125°C,
(SCSOA) RG = 10, VCE = 1500V, Non-Repetitive 10 μs
PCTC = 25°C 660 W
TJ - 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
FC Mounting Force 20..120/4.5..27 N/lb
Weight 6 g
DS100624(7/14)
IXBX50N360HV
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 3600 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 VCES, VGE = 0V 25 μA
Note 2, TJ = 125°C 1 mA
IGES VCE = 0V, VGE = ± 20V ±200 nA
VCE(SAT) IC = 50A, VGE = 15V, Note 1 2.4 2.9 V
TJ = 125°C 3.0 V
VCES = 3600V
IC110 = 50A
VCE(sat)
2.9V
BiMOSFETTM Monolithic
Bipolar MOS Transistor
High Voltage,
High Frequency
Advance Technical Information
G = Gate E = Emitter
C = Collector Tab = Collector
TO-247PLUS-HV
GE
C Tab
Features
High Blocking Voltage
High Voltage Package
Low Conduction Losses
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Uninterruptible Power Supplies (UPS)
Switch-Mode and Resonant-Mode
Power Supplies
Capacitor Discharge Circuits
Laser Generators
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBX50N360HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 50A, VCE = 10V, Note 1 24 40 S
Cies 3990 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 195 pF
Cres 100 pF
Qg(on) 210 nC
Qge IC = 50A, VGE = 15V, VCE = 1000V 27 nC
Qgc 77 nC
td(on) 46 ns
tr 420 ns
td(off) 205 ns
tf 1750 ns
td(on) 44 ns
tr 845 ns
td(off) 210 ns
tf 1670 ns
RthJC 0.19 °C/W
RthCS 0.15 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
Resistive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 960V, RG = 5
Resistive load, TJ = 125°C
IC = 50A, VGE = 15V
VCE = 960V, RG = 5
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max
VF IF = 50A, VGE = 0V, Note 1 3.0 V
trr 1.7 μs
IRM 48 A
QRM 40 μC
IF = 25A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
TO-247PLUS-HV Outline
1 - Gate
2,4 - Emitter
3 - Collector
© 2014 IXYS CORPORATION, All Rights Reserved
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
0 0.5 1 1.5 2 2.5 3 3.5 4
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
21V
17V
15V
13V
11V
7V
5V
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
0 5 10 15 20 25
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
19V
15V
9V
5V
11V
7V
13V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
20
40
60
80
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
19V
15V
13V
11V
5V
7V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 100A
I
C
= 50A
I
C
= 25A
Fig. 5. Collector-to-Emitter Voltage
vs . Gate -to -Emitter Voltage
1
2
3
4
5
6
7
6 7 8 9 101112131415
VGE - Volts
VCE - Volts
I
C
= 100A
T
J
= 25ºC
50A
25A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
345678910
VGE - Volts
IC
-
Amperes
T
J
= 125ºC
25ºC - 40ºC
IXBX50N360HV
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBX50N360HV
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
0 20 40 60 80 100 120 140 160 180
I
C
- Amperes
g
f s
-
Siemens
TJ = - 40ºC
25ºC
125ºC
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1000V
I
C
= 50A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
Cies
Coes
Cres
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
01234567
V
F
- Volts
I
F
- Amperes
VGE = 0V
TJ
J
= 25ºC
125ºC
VGE = 15V
Fig. 11. Reverse-Bias Safe Operating Area
0
40
80
120
160
200
240
200 600 1000 1400 1800 2200 2600 3000 3400
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 5
dv / dt < 10V / ns
Fig. 1 2. Maximum Transient Thermal Impedanc e
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2014 IXYS CORPORATION, All Rights Reserved
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
0
200
400
600
800
1000
1200
1400
25 35 45 55 65 75 85 95 105
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 5 , V
GE
= 15V
V
CE
= 960V
T
J
= 12C
T
J
= 25ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
600
700
800
900
1000
1100
1200
5 10152025303540
R
G
- Ohms
t
r
- Nanoseconds
10
30
50
70
90
110
130
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 960V
I
C
= 50A, 100A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
800
1000
1200
1400
1600
1800
2000
2200
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
160
170
180
190
200
210
220
230
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5, V
GE
= 15V
V
CE
= 960V
I
C
= 100A
I
C
= 50A
Fig. 1 3. Resistive Turn-on Rise Time vs.
Junction Temperature
200
300
400
500
600
700
800
900
1000
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5 , V
GE
= 15V
V
CE
= 960V
I
C
= 50A
I
C
= 100A
Fig. 17. Resistive Turn-off Switching Times v s.
Collector Current
400
800
1200
1600
2000
2400
2800
3200
25 35 45 55 65 75 85 95 105
I
C
- Amperes
t
f
- Nanoseconds
140
160
180
200
220
240
260
280
t d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5, V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC, 25ºC
Fig. 18. Resistive Turn-off Switching Times vs .
Gate Resistance
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
5 10152025303540
R
G
- Ohms
t
f - Nanoseconds
100
200
300
400
500
600
700
800
900
1000
1100
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 960V
I
C
= 100A
I
C
= 50A
IXBX50N360HV
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBX50N360HV
IXYS REF: B_50N360(H8) 7-25-14
Fig. 19. For ward- Bias Saf e Oper ating Area @ TC = 25ºC
0.01
0.1
1
10
100
1000
1 10 100 1,000 10,000
VCE - Volts
IC - Amperes
100µs
10ms
100ms
VCE(sat) Limi
t
TJ = 150ºC
TC = 25ºC
Single Pulse DC
25µs
1ms
Fig. 20. For ward- Bias Saf e Oper ating Area @ TC = 75ºC
0.01
0.1
1
10
100
1000
1 10 100 1,000 10,000
VCE - Volts
IC - Amperes
100µs
10ms
100ms
VCE(sat) Limi
t
TJ = 150ºC
TC = 75ºC
Single Pulse
DC
25µs
1ms
Mouser Electronics
Authorized Distributor
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IXBX50N360HV