
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBX50N360HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 50A, VCE = 10V, Note 1 24 40 S
Cies 3990 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 195 pF
Cres 100 pF
Qg(on) 210 nC
Qge IC = 50A, VGE = 15V, VCE = 1000V 27 nC
Qgc 77 nC
td(on) 46 ns
tr 420 ns
td(off) 205 ns
tf 1750 ns
td(on) 44 ns
tr 845 ns
td(off) 210 ns
tf 1670 ns
RthJC 0.19 °C/W
RthCS 0.15 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
Resistive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 960V, RG = 5
Resistive load, TJ = 125°C
IC = 50A, VGE = 15V
VCE = 960V, RG = 5
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max
VF IF = 50A, VGE = 0V, Note 1 3.0 V
trr 1.7 μs
IRM 48 A
QRM 40 μC
IF = 25A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
TO-247PLUS-HV Outline
1 - Gate
2,4 - Emitter
3 - Collector