MSKD120 ; MSAD120 ; MSCD120
MSKD120_MSAD120_MSCD120 - Rev2 www.microsemi.com
Oct, 2011 1/3
Module Type TYPE VRRM VRSM
MSCD120-08
MSCD120-12
MSCD120-16
MSCD120-18
MSAD120-08
MSAD120-12
MSAD120-16
MSAD120-18
MSKD120-08
MSKD120-12
MSKD120-16
MSKD120-18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol Conditions Values Units
IFAV Single phase ,half wave 180°conduction Tc=106℃ 120 A
IF(RMS) Single phase ,half wave 180°conduction Tc=97℃ 180 A
IFSM t=10mS Tvj =45℃ 2800 A
i2t t=10mS Tvj =45℃ 39200 A2s
Visol a.c.50HZ;r.m.s.;1min 3000 V
Tvj -40 to +150 ℃
Tstg -40 to +125 ℃
Mt To terminals(M5) 3±15% Nm
Ms To heatsink(M6) 5±15% Nm
Weight Module (Approximately) 100 g
Thermal Characteristics
Symbol Conditions Values Units
Rth(j-c) Per diode 0.26 ℃/W
Rth(c-s) Module 0.1
℃/W
Electrical Characteristics
Circuit
Glass Passivated Rectifier
Diode Modules
VRRM 800 to 1800V
IFAV 120 Am
Applications
y Non-controllable rectifiers for AC/AC
converters
y Line rectifiers for transistorized AC motor
controllers
y Field supply for DC motors
Features
y Blocking voltage:80 0 to 1800V
y Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
y Glass passivated chip
y UL E243882 app roved
Values
Symbol Conditions Min. Typ. Max. Units
VFM T=25℃ IF =300A - 1.22 1.43 V
IRD Tvj=150℃ VRD=VRRM - - 6 mA