FQP8N80C - Fairchild - Datasheet.Directory

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU

800V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies.

Features

• 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V

• Low gate charge ( typical 35 nC)

• Low Crss ( typical 13 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings TC = 25°C unless otherwise noted

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol Parameter FQP8N80C FQPF8N80C Units

VDSS Drain-Source Voltage 800 V

IDDrain Current - Continuous (TC = 25°C) 88 *A

- Continuous (TC = 100°C) 5.1 5.1 * A

IDM Drain Current - Pulsed (Note 1) 32 32 * A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 850 mJ

IAR Avalanche Current (Note 1) 8A

EAR Repetitive Avalanche Energy (Note 1) 17.8 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C) 178 59 W

- Derate above 25°C 1.43 0.48 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter FQP8N80C FQPF8N80C Units

RθJC Thermal Resistance, Junction-to-Case 0.7 2.1 °C/W

RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

TO-220

FQP Series

GSD TO-220F

FQPF Series

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QFETTM

January 2009

•RoHS Compliant

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 2

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA800 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA

VDS = 640 V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 4 A -- 1.29 1.55 Ω

gFS Forward Transconductance VDS = 50 V, ID = 4 A (Note 4) -- 5.6 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 1580 2050 pF

Coss Output Capacitance -- 135 175 pF

Crss Reverse Transfer Capacitance -- 13 17 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 400 V, ID = 8 A,

RG = 25 Ω

(Note 4, 5)

-- 40 90 ns

trTurn-On Rise Time -- 110 230 ns

td(off) Turn-Off Delay Time -- 65 140 ns

tfTurn-Off Fall Time -- 70 150 ns

QgTotal Gate Charge VDS = 640 V, ID = 8 A,

VGS = 10 V

(Note 4, 5)

-- 35 45 nC

Qgs Gate-Source Charge -- 10 -- nC

Qgd Gate-Drain Charge -- 14 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 8 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 8 A,

dIF / dt = 100 A/µs (Note 4)

-- 690 -- ns

Qrr Reverse Recovery Charge -- 8.2 -- µC

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

048121620

1.0

1.5

2.0

2.5

3.0

GS = 20V

GS = 10V

※

Note : T

= 25℃

RDS(ON) [Ω],

Drain-Source On-Resistance

, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

101

150℃

※ Notes :

1. VGS = 0V

2. 250μs Pulse Test

25℃

IDR , Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

10-1 100101

10-1

100

101

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

※ Notes :

1. 250μs Pulse Test

2. TC

= 25℃

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

10-1

100

101

150oC

25oC-55oC

※

Notes :

1. VDS = 50V

2. 250μs Pulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

10-1 100101

500

1000

1500

2000

2500 C

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

010203040

VDS = 400V

VDS = 160V

VDS = 640V

※ Note : ID

= 8A

VGS , Gate-Source Voltage [V]

, Total Gate Charge [nC]

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 4

Typical Characteristics (Continued)

Figure 9-1. Maximum Safe Operating Area

for FQP8N80C

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 9-2. Maximum Safe Operating Area

for FQPF8N80C

25 50 75 100 125 150

ID, Drain Current [A]

, Case Temperature [℃

]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※

Notes :

1. VGS = 0 V

2. ID

= 250 μA

BV DSS , (Normalized)

Drain-Source Breakdown Voltage

J, Junction Temperature [o

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. VGS = 10 V

2. ID

= 4.0 A

RDS(ON) , (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

100101102103

10-2

10-1

100

101

102

10 µs

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

※ Notes :

1. TC

= 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

100101102103

10-2

10-1

100

101

102

10 µs

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

※ Notes :

1. TC

= 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 5

Typical Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FQP8N80C

Figure 11-2. Transient Thermal Response Curve for FQPF8N80C

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

※ Notes :

1 . Z θJC(t) = 0.7 ℃/W M a x .

2 . D uty Facto r, D = t1/t2

3 . T JM - T C = PDM * ZθJC (t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Thermal Response

t1, Square Wave Pulse Duration [sec]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

※ Notes :

1 . Z θJC(t) = 2.1 ℃/W M ax.

2 . D u ty F actor, D = t1/t2

3 . T JM - TC = PDM * ZθJC(t)

sin g le pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Therm al R e sponse

t1, Square Wave Pulse Duration [sec]

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

Sam e Type

as D U T

VGS

• dv/dt controlled by R

•I

controlled by pulse period

VDD

ISD

10V

VGS

( D riv e r )

ISD

( D U T )

VDS

( DUT )

VDD

Body D iode

Forw ard Voltage D rop

VSD

, Body D iode Forw ard C urrent

Body D iode R everse C urrent

IRM

Body D iode R ecovery dv/dt

di/dt

D = G ate P ulse W idth

Gate Pulse Period

--------------------------

DUT

VDS

Driver

Sam e Type

as D U T

VGS

• dv/dt controlled by R

•I

controlled by pulse period

VDD

ISD

10V

VGS

( D riv e r )

ISD

( D U T )

VDS

( DUT )

VDD

Body D iode

Forw ard Voltage D rop

VSD

, Body D iode Forw ard C urrent

Body D iode R everse C urrent

IRM

Body D iode R ecovery dv/dt

di/dt

D = G ate P ulse W idth

Gate Pulse Period

--------------------------

D = G ate P ulse W idth

Gate Pulse Period

--------------------------

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FDB037N06 N-Channel PowerTrench® MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

Sam e Type

as D U T

VGS

• dv/dt controlled by R

•I

controlled by pulse period

VDD

ISD

10V

VGS

( D riv e r )

ISD

( D U T )

VDS

( DUT )

VDD

Body D iode

Forw ard Voltage D rop

VSD

, Body D iode Forw ard C urrent

Body D iode R everse C urrent

IRM

Body D iode R ecovery dv/dt

di/dt

D = G ate P ulse W idth

Gate Pulse Period

--------------------------

DUT

VDS

Driver

Sam e Type

as D U T

VGS

• dv/dt controlled by R

•I

controlled by pulse period

VDD

ISD

10V

VGS

( D riv e r )

ISD

( D U T )

VDS

( DUT )

VDD

Body D iode

Forw ard Voltage D rop

VSD

, Body D iode Forw ard C urrent

Body D iode R everse C urrent

IRM

Body D iode R ecovery dv/dt

di/dt

D = G ate P ulse W idth

Gate Pulse Period

--------------------------

D = G ate P ulse W idth

Gate Pulse Period

--------------------------

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FQP8N80C/FQPF8N80CFQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 8

Package Dimensions

4.50 ±0.20

9.90 ±0.20

1.52 ±0.10

0.80 ±0.10 2.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80 ±0.1015.90 ±0.20

10.08 ±0.30 18.95MAX.

(1.70)

(3.70)(3.00)

(1.46)

(1.00)

(45°)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

1.30 +0.10

–0.05

0.50 +0.10

–0.05

2.54TYP

[2.54 ±0.20]2.54TYP

[2.54 ±0.20]

TO-220

Dimensions in Millimeters

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 9

Package Dimensions (Continued)

(7.00) (0.70)

MAX1.47

(30°)

3.30 ±0.10

15.80 ±0.20

15.87 ±0.20

6.68 ±0.20

9.75 ±0.30

4.70 ±0.20

10.16 ±0.20

(1.00x45°)

2.54 ±0.20

0.80 ±0.10

9.40 ±0.20

2.76 ±0.20

0.35 ±0.10

ø3.18 ±0.10

2.54TYP

[2.54 ±0.20]2.54TYP

[2.54 ±0.20]

0.50 +0.10

–0.05

TO-220F

Dimensions in Millimeters

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FQF8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A

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FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

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Rev. I37

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

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EcoSPARK®

EfficentMax™

EZSWITCH™ *

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Programmable Active Droop™

QFET®

QS™

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RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

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SuperSOT™-6

SuperSOT™-8

SupreMOS™

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μSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

may change in any manner with out notice.

Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconduct or reserves the right to make changes at any time withou t

notice to improve design.

No Identification Neede d Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to impr ove the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild

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