FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features * Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely Applications low RDS(ON) * DC/DC converter * SC70-6 package: small footprint (51% smaller than * Load switch SSOT-6); low profile (1mm thick) * LCD display inverter * Qualified to AEC Q101 * RoHS Compliant S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Absolute Maximum Ratings Symbol Complementary o TA=25 C unless otherwise noted Q1 Q2 VDSS Drain-Source Voltage Parameter 20 -20 V VGSS Gate-Source Voltage 12 12 V ID Drain Current 0.7 -0.6 A PD Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range - Continuous (Note 1) - Pulsed 2.1 (Note 1) Units -2 0.3 W -55 to +150 C 415 C/W Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .32 FDG6332C_F085 7'' 8mm 3000 units 2009 Fairchild Semiconductor Corporation FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs March 2009 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage BVDSS TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF /IGSSR Gate-Body Leakage, Forward IGSSF /IGSSR Gate-Body Leakage, Reverse On Characteristics ID = 250 A VGS = 0 V, VGS = 0 V, ID = -250 A ID = 250 A,Ref. to 25C ID = -250 A,Ref. to 25C VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 12V , VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 20 -20 V 14 -14 mV/C 1 -1 100 100 A V (Note 2) Gate Threshold Voltage Q1 VDS = VGS, ID = 250 A 0.6 1.1 1.5 VDS = VGS, ID = -250 A -0.6 -1.5 VGS(th) TJ Gate Threshold Voltage Temperature Coefficient Q2 Q1 Q2 RDS(on) Static Drain-Source On-Resistance VGS(th) gFS ID(on) nA nA Q2 VGS = -4.5 V, ID = -0.6 A VGS = -2.5 V, ID = -0.5 A VGS=-4.5 V, ID =-0.6 A,TJ=125C -1.2 -2.8 3 180 293 247 300 470 400 Q1 VDS = 5 V ID = 0.7 A 2.8 Q2 VDS = -5 V ID = -0.6A 1.8 Q1 VGS = 4.5 V, VDS = 5 V Q2 VGS = -4.5 V, VDS = -5 V Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 113 Q2 VDS=-10 V, V GS= 0 V, f=1.0MHz 114 Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 34 Q2 VDS=-10 V, V GS= 0 V, f=1.0MHz 24 VDS=10 V, V GS= 0 V, f=1.0MHz 16 Q2 VDS=-10 V, V GS= 0 V, f=1.0MHz 9 Q1 For Q1: VDS =10 V, VGS= 4.5 V, Q1 Forward Transconductance On-State Drain Current ID = 250 A,Ref. To 25C ID = -250 A,Ref. to 25C VGS = 4.5 V, ID =0.7 A VGS = 2.5 V, ID =0.6 A VGS = 4.5 V, ID =0.7A,TJ=125C mV/C 300 400 442 m 420 630 700 S A 1 -2 Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Q1 Switching Characteristics td(on) Turn-On Delay Time td(off) Turn-On Rise Time Q1 Turn-Off Delay Time Q2 Q1 Q2 tf Qg Qgs Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge pF I D= 1 A RGEN = 6 For Q2: VDS =-10 V, I D= -1 A VGS= -4.5 V, RGEN = 6 5 10 5.5 11 7 14 15 25 ns 9 18 ns 6 12 ns Q1 1.5 3 ns Q2 1.7 1.1 3.4 1.5 nC 1.4 2 Q1 Q2 Q1 Q2 Qgd pF (Note 2) Q2 tr pF Q1 Q2 For Q1: VDS =10 V, VGS= 4.5 V, For Q2: VDS =-10 V, VGS= -4.5 V, I D= 0.7 A RGEN = 6 I D= -0.6 A RGEN = 6 0.24 nC 0.3 0.3 0.4 nC FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Q1 0.25 Q2 -0.25 Q1 VGS = 0 V, IS = 0.25 A (Note 2) 0.74 1.2 Q2 VGS = 0 V, IS = -0.25 A (Note 2) -0.77 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. RJA = 415C/W when mounted on a minimum pad of FR-4 PCB in a still air environment. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs Electrical Characteristics 1.8 4 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS=4.5V 3.5V 2.5V 3 2 2.0V 1 1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.0V 0.8 0 0 1 2 3 0 4 1 Figure 1. On-Region Characteristics. 3 4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 1.6 ID =0.7A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 I D, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 ID =0.4A 0.6 TA = 125oC 0.4 o TA = 25 C 0.2 0 0.6 -50 -25 0 25 50 75 100 125 1 150 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 2.5 2 VGS = 0V 25oC IS, REVERSE DRAIN CURRENT (A) o TA = -55 C VDS = 5V I D, DRAIN CURRENT (A) 4.5V 1 125oC 1.5 1 0.5 1 TA = 125oC 25 oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs Typical Characteristics: N-Channel 200 VDS = 5V ID = 0.7A f = 1MHz VGS = 0 V 10V 4 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 150 CISS 100 COSS 50 1 CRSS 0 0 0 0.4 0.8 1.2 0 1.6 Figure 7. Gate Charge Characteristics. 10 15 20 Figure 8. Capacitance Characteristics. 10 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) 100s 1ms 1 10ms 100ms 1s VGS = 4.5V SINGLE PULSE RJA = 415oC/W 0.1 DC TA = 25oC 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 100 SINGLE PULSE RJA = 415C/W TA = 25C 8 6 4 2 0 0.001 0.01 0.1 1 10 100 t 1, TIME (sec) Figure 10. Single Pulse Maximum Power Dissipation. FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs Typical Characteristics: N-Channel 2 1.8 VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V -ID, DRAIN CURRENT (A) -3.5V 1.6 -2.5V 1.2 0.8 -2.0V 0.4 VGS = -2.5V 1.6 1.4 -3.0V 1.2 -3.5V -4.0V -4.5V 1 0.8 0 0 1 2 3 0 4 0.5 Figure 11. On-Region Characteristics. 2 1.2 ID = -0.6A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 1.2 1.1 1 0.9 0.8 ID = -0.3 A 1 0.8 o TA = 125 C 0.6 TA = 25o C 0.4 0.2 0.7 -50 -25 0 25 50 75 100 125 1 150 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 10 2 TA = -55 oC VGS = 0V 25oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V o -ID, DRAIN CURRENT (A) 1 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 125 C 1.5 1 0.5 1 o TA = 125 C 0.1 o 25 C 0.01 -55oC 0.001 0.0001 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6332C_F085 Rev C2 (W) FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs Typical Characteristics: P-Channel 160 ID = -0.6A VDS = -5V f = 1MHz VGS = 0 V -10V 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 120 CISS 80 COSS 40 1 CRSS 0 0 0 0.3 0.6 0.9 1.2 1.5 0 1.8 5 Figure 17. Gate Charge Characteristics. 15 20 Figure 18. Capacitance Characteristics. 10 10 100s RDS(ON) LIMIT 10ms 100ms 1s VGS = -4.5V SINGLE PULSE RJA = 415 oC/W DC 6 4 2 TA = 25oC 0.01 0.1 o TA = 25 C 1ms 1 0.1 SINGLE PULSE o RJA = 415 C/W 8 POWER (W) -ID, DRAIN CURRENT (A) 10 -V DS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 100 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA RJA = 415 C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 t2 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. 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