N-CHANNEL
POWER MOSFET
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3332
Issue 2
Page 1 of 3
IRF240
• Low RDS(on) MOSFET Transistor
In A Hermetic Metal Package
• Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage 200V
VGS Gate – Source Voltage ±20V
ID Continuous Drain Current Tc = 25°C 18A
ID Continuous Drain Current Tc = 100°C 11A
IDM Pulsed Drain Current
(1)
72A
PD Total Power Dissipation at Tc = 25°C 125W
Derate Above 25°C 1.0W/°C
EAS Single Pulse Avalanche Energy
(2)
12.5mJ
dv/dt Peak Diode Recovery
(3)
5V/ns
TJ Junction Temperature Range -55 to +150°C
Tstg Storage Temperature Range -55 to +150°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJC
Thermal Resistance, Junction To Case 1.0 °C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Parameters Min. Typ. Max. Units
LD Internal Drain Inductance 5
LS Internal Source Inductance 13
nH
Notes
NotesNotes
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @VDD = 50V, L ≥ 2.1mH, Peak IL = 18A, Starting TJ = 25°C
(3) @ ISD ≤ 18A, di/dt ≤ 160A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω
(4) Pulse Width ≤ 300us, δ ≤ 2%
N-CHANNEL
POWER MOSET
IRF240
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3332
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
BVDSS Drain-Source Breakdown
Voltage VGS = 0 ID = 1.0mA 200 V
J
T
VDSS
B
∆
∆
Temperature Coefficent of
Breakdown Voltage
Reference
to 25°C ID = 1.0mA 0.29 V/°C
VGS = 10V ID = 11A
(4)
0.18
RDS(on) Static Drain-Source
On-State Resistance VGS = 10V ID = 18A
(4)
0.21
Ω
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250
µ
A 2 4 V
gfs Forward Transconductance VDS
≥
15V I DS = 11A
(4)
6.1 S(
Ʊ
)
VGS = 0 VDS = 0.8BVDSS 25
IDSS Zero Gate Voltage
Drain Current TJ = 125°C 250
µ
A
IGSS Forward Gate-Source
Leakage VGS = 20V 100
IGSS Reverse Gate-Source
Leakage VGS = -20V -100
nA
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 1300
Coss Output Capacitance VDS = 25V 400
Crss Reverse Transfer
Capacitance f = 1.0MHz 130
pF
Qg Total Gate Charge VGS = 10V 32 60
Qgs Gate-Source Charge ID = 18A 2.2 10.6
Qgd Gate-Drain Charge VDS = 0.5BVDSS 14 38
nC
td(on) Turn-On Delay Time 20
tr Rise Time 152
td(off) Turn-Off Delay Time 58
tf Fall Time
VDD = 100V
ID = 18A
RG = 9.1
Ω
67
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current 18
ISM Pulse Source Current
(1)
72
A
IS = 18A TJ = 25°C
VSD Diode Forward Voltage VGS = 0
(4)
1.5 V
trr Reverse Recovery Time IS = 18A TJ = 25°C 500 ns
Qrr Reverse Recovery Charge VDD
≤
50V di/dt = 100A/
µ
s
(4)
5.3
µ
C
N-CHANNEL
POWER MOSET
IRF240
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 3332
Issue 2
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO3 (TO
-
204AE
)
Pin 1 - Gate Pin 2 - Source Case - Drain
3 9 . 9 5 ( 1 . 5 7 3 )
m a x .
17.15 (0.675)
16.64 (0.655)
3 0 . 4 0 ( 1 . 1 9 7 )
3 0 . 1 5 ( 1 . 1 8 7 )
2 6 . 6 7 ( 1 . 0 5 0 )
m a x .
1 1 . 1 8 ( 0 . 4 4 0 )
1 0 . 6 7 ( 0 . 4 2 0 )
1
2
4.09 (0.161)
3.84 (0.151)
d i a .
2 p l c s .
20.32 (0.800)
18.80 (0.740)
d i a .
7 . 8 7 ( 0 . 3 1 0 )
6 . 9 9 ( 0 . 2 7 5 )
1 2 . 0 7 ( 0 . 4 7 5 )
1 1 . 3 0 ( 0 . 4 4 5 )
1 . 7 8 ( 0 . 0 7 0 )
1 . 5 2 ( 0 . 0 6 0 )
1.57 (0.062)
1.47 (0.058)
d i a .
2 p l c s .
