5STP 08T2800 5STP 08T2800 Old part no. TV 907C-800-28 Phase Control Thyristor Properties High operational capability Possibility of serial and parallel connection Applications Controlled rectifiers AC drives Key Parameters V DRM, V RRM = 2 800 I TAVm = 792 I TSM = 10 600 V TO = 1.062 r T = 0.492 V A A V m Types VRRM, VDRM 5STP 08T2800 5STP 08T2600 2 800 V 2 600 V Conditions: Tj = -40 / 125 C, half sine waveform, f = 50 Hz Mechanical Data Fm Mounting force m Weight DS Surface creepage distance 13 mm Da Air strike distance 8 mm 10 2 kN 0.20 kg Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - TV/274/08 Jul-10 1 of 5 5STP 08T2800 Maximum Ratings VRRM VDRM ITRMS Repetitive peak reverse and off-state voltage Maximum Limits Unit 2 800 2 600 V 1 244 A 792 A tp = 10 ms tp = 8.3 ms 10 600 11 300 A tp = 10 ms tp = 8.3 ms 561 800 530 000 A2s 200 A/s 1 000 V/s 5STP 08T2800 5STP 08T2600 Tj = -40 / 125 C RMS on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITAVm Average on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITSM Peak non-repetitive surge half sine pulse, VR = 0 V I2t Limiting load integral half sine pulse, VR = 0 V (diT/dt)cr Critical rate of rise of on-state current IT = ITAVm, half sine waveform, f = 50 Hz, VD = 2/3 VDRM, tr = 0.3 s, IGT = 2 A (dvD/dt)cr Critical rate of rise of off-state voltage VD = 2/3 VDRM PGAVm Maximum average gate power losses 3 W IFGM Peak gate current 10 A VFGM Peak gate voltage 12 V VRGM Reverse peak gate voltage 10 V Tjmin - Tjmax Operating temperature range -40 / 125 C Tstgmin Tstgmax Storage temperature range -40 / 125 C Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TV/274/08 Jul-10 2 of 5 5STP 08T2800 Characteristics Value min. VTM typ. Maximum peak on-state voltage Unit max. 1.800 V ITM = 1 500 A VT0 Threshold voltage 1.062 V rT Slope resistance 0.492 m IT1 = 1 000 A, IT2 = 3 000 A IDM Peak off-state current VD = VDRM 70 mA IRM Peak reverse current VR = VRRM 70 mA tgd Delay time 2 s Tj = 25 C, VD = 0.4 VDRM, ITM = ITAVm, tr = 0.3 s, IGT = 2 A tq Turn-off time 200 s 1 600 C IT = 1500 A, diT/dt = 12.5 A/s, VD = 2/3 VDRM, dvD/dt = 50 V/s Qrr Recovery charge the same conditions as at tq IH Holding current Tj = 25 C Tj = 125 C 170 90 mA IL Latching current Tj = 25 C Tj = 125 C 450 350 mA VGT Gate trigger voltage Tj = - 40 C Tj = 25 C Tj = 125 C VD = 12V, IT = 4 A IGT Gate trigger current VD = 12V, IT = 4 A Tj = - 40 C Tj = 25 C Tj = 125 C V 0.25 4 3 2 mA 10 500 250 150 Unless otherwise specified Tj = 125 C Thermal Parameters Rthjc Thermal resistance junction to case Value Unit 32.0 K/kW double side cooling Rthch anode side cooling 52.0 cathode side cooling 83.0 Thermal resistance case to heatsink 10.0 K/kW double side cooling single side cooling 20.0 ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TV/274/08 Jul-10 3 of 5 5STP 08T2800 Transient Thermal Impedance i 1 2 3 4 5 i ( s ) 0.4857 0.2162 0.0762 0.0043 0.0006 Ri( K/kW ) 13.07 8.03 8.20 2.57 0.13 Analytical function for transient thermal impedance 5 Z thjc = R i (1 - exp( -t / i )) Transient therm al im pedance junction to case Zthjc ( K/kW ) i =1 Conditions: Fm = 10 2 kN, Double side cooled Correction for periodic waveforms 180 sine: add 2.3 K/kW 180 rectangular: add 3.1 K/kW 120 rectangular: add 5.2 K/kW 60 rectangular: add 8.7 K/kW 35 30 25 20 15 10 5 0 0,001 0,01 0,1 1 10 Square w ave pulse duration t d ( s ) ITSM ( kA ) 6000 IT ( A ) T j = 25C 125C 5000 4000 3000 2000 1000 0 0 1 2 3 4 5 VT ( V ) Fig. 3 Maximum on-state characteristics 18 0,9 I TSM 2 i dt 16 0,8 14 0,7 12 0,6 10 0,5 8 0,4 6 1 10 t ( ms ) 0,3 100 Fig. 4 Surge on-state current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TV/274/08 Jul-10 4 of 5 i 2dt (106 A2s) Fig. 2 Dependence transient thermal impedance junction to case on square pulse = 30 60 90 120 180 1800 = 30 60 90 120 180 270 DC 1800 1600 DC PT ( W ) PT ( W ) 5STP 08T2800 1600 1400 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 0 0 200 400 600 800 1000 0 200 400 600 800 I TAV ( A ) 130 Fig. 6 On-state power loss vs. average on-state current, square waveform, f = 50 Hz, T = 1/f TC ( C ) TC ( C ) Fig. 5 On-state power loss vs. average on-state current, sine waveform, f = 50 Hz, T = 1/f 120 1000 I TAV ( A ) 130 120 110 110 100 100 90 90 80 80 DC DC 70 70 270 = 30 60 90120 60 0 200 400 600 180 800 1000 = 30 60 90 120 180 60 0 200 400 600 I TAV ( A ) Fig. 7 Max. case temperature vs. aver. on-state current, sine waveform, f = 50 Hz, T = 1/f 800 1000 I TAV ( A ) Fig. 8 Max. case temperature vs. aver. on-state current, square waveform, f = 50 Hz, T = 1/f Notes: ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TV/274/08 Jul-10 5 of 5