TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2
September 2009
TIL111M, TIL117M, MOC8100M
General Purpose 6-Pin Phototransistor Optocouplers
Features
■
UL recognized (File # E90700)
■
VDE recognized (File #102497 for white package)
– Add option V (e.g., TIL111VM)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
■
Appliance sensor systems
■
Industrial controls
General Description
The MOC8100M, TIL111M and TIL117M optocouplers
consist of a gallium arsenide infrared emitting diode
driving a silicon phototransistor in a 6-pin dual in-line
package.
Schematic Package Outlines
CATHODE 2
NC 3
ANODE 1
5 COLLECTOR
6 BASE
4 EMITTER
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 2
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Device Value Units
TOTAL DEVICE
T
STG
Storage Temperature All -40 to +150 °C
T
OPR
Operating Temperature All -40 to +100 °C
T
SOL
Lead Solder Temperature All 260 for 10 sec °C
P
D
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
All 250 mW
2.94 mW/°C
EMITTER
I
F
DC/Average Forward Input Current All 60 mA
V
R
Reverse Input Voltage TIL111M 3 V
MOC8100M, TIL117M 6
I
F
(pk) Forward Current – Peak (300µs, 2% Duty Cycle) All 3 A
P
D
LED Power Dissipation @ T
A
= 25 °C
Derate above 25°C
All 120 mW
1.41 mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage All 30 V
V
CBO
Collector-Base Voltage All 70 V
V
ECO
Emitter-Collector Voltage TIL111M, TIL117M 7 V
V
EBO
Emitter-Base Voltage All 7
P
D
Detector Power Dissipation @ T
A
= 25 °C
Derate above 25°C
All 150 mW
1.76 mW/°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 3
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
*All Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 16mA T
A
= 25°C TIL111M 1.2 1.4 V
I
F
= 10mA for
MOC8100M,
I
F
= 16mA; for
TIL117M
T
A
= 0°C–70°C MOC8100M,
TIL117M
1.2 1.4
T
A
= -55°C 1.32
T
A
= +100°C 1.10
I
R
Reverse Leakage Current V
R
= 3.0V TIL111M, TIL117M 0.001 10 µA
V
R
= 6.0V MOC8100M 0.001 10 µA
DETECTOR
BV
CEO
Collector-Emitter
Breakdown Voltage
I
C
= 1.0mA, I
F
= 0 All 30 100 V
BV
CBO
Collector-Base
Breakdown Voltage
I
C
= 10µA, I
F
= 0 All 70 120 V
BV
EBO
Emitter-Base Breakdown
Voltage
I
E
= 10µA, I
F
= 0 All 7 10 V
BV
ECO
Emitter-Collector
Breakdown Voltage
I
F
= 100µA, I
F
= 0 TIL111M, TIL117M 7 10 V
I
CEO
Collector-Emitter Dark
Current
V
CE
= 10V, I
F
= 0 TIL111M, TIL117M 1 50 nA
V
CE
= 5V, T
A
= 25°C MOC8100M 0.5 25 nA
V
CE
= 30V, I
F
= 0, T
A
= 70°C TIL117M,
MOC8100M
0.2 50 µA
I
CBO
Collector-Base Dark
Current
V
CB
= 10V TIL111M, TIL117M 20 nA
I
CBO
V
CB
= 5V MOC8100M 10 nA
C
CE
Capacitance V
CE
= 0V, f = 1MHz All 8 pF
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 4
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
(Continued) (T
A
= 25°C unless otherwise specified.)
Transfer Characteristics
Isolation Characteristics
*All Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Device Min Typ* Max Unit
DC CHARACTERISTICS
CTR
CE
Current Transfer Ratio,
Collector to Emitter
I
F
= 10mA, V
CE
= 10V TIL117M 50 %
I
F
= 1mA, V
CE
= 5V MOC8100M 50 %
I
F
= 1mA, V
CE
= 5V,
T
A
= 0°C to +70°C
30
I
C(ON)
On-State Collector Current
(Phototransistor Operation)
I
F
= 16mA, V
CE
= 0.4V TIL111M 2 mA
On-State Collector Current
(Photodiode Operation)
I
F
= 16mA, V
CB
= 0.4V 7 µA
V
CE (SAT)
Collector-Emitter Saturation
Voltage
I
C
= 500µA, I
F
= 10mA TIL117M 0.4 V
I
C
= 2mA, I
F
= 16mA TIL111M 0.4
I
C
= 100µA, I
F
= 1mA MOC8100M 0.5
AC CHARACTERISTICS
T
ON
Turn-On Time I
C
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
MOC8100M 20 µs
TIL117M 10
T
OFF
Turn-Off Time MOC8100M 20 µs
TIL117M 10
t
r
Rise Time MOC8100M
TIL117M
2µs
t
f
Fall Time 2
t
r
Rise Time
(Phototransistor Operation)
I
C(ON)
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
TIL111M 10 µs
t
f
Fall Time
(Phototransistor Operation)
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage
f = 60Hz, t = 1 sec. 7500 V
AC(rms)
R
ISO
Isolation Resistance V
I-O
= 500 VDC 10
11
Ω
C
ISO
Isolation Capacitance
V
I-O
= 0,
f = 1MHz 0.2 pF
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 5
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms I-IV
For Rated Main voltage < 300Vrms I-IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
V
PR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594 Vpeak
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275 Vpeak
VIORM Max. Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over Voltage 6000 Vpeak
External Creepage 7 mm
External Clearance 7 mm
Insulation Thickness 0.5 mm
RIO Insulation Resistance at Ts, VIO = 500V 109 Ω
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 6
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Characteristics
Fig. 2 Normalized CTR vs. Forward Current
IF – FORWARD CURRENT (mA)
02468101214161820
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 5.0V
TA = 25˚C
Normalized to
IF = 10mA
Fig. 3 Normalized CTR vs. Ambient Temperature
TA – AMBIENT TEMPERATURE (˚C)
-60 -40 -20 020 40 60 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5mA
IF = 10mA
IF = 20mA
Normalized to:
IF = 10mA
TA = 25˚C
Fig. 4 CTR vs. RBE (Unsaturated)
RBE – BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 5.0V
IF = 20mA
IF = 10mA IF = 5mA
Fig. 5 CTR vs. RBE (Saturated)
RBE – BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20mA
IF = 10mA
IF = 5mA
VCE = 0.3V
IF – LED FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 25°C
TA = -55°C
TA = 100°C
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
IF = 5mA
IF = 20mA
IF = 10mA
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
IC - COLLECTOR CURRENT (mA)
VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V)
IF = 2.5mA
TA = 25
˚C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 7
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Characteristics (Continued)
10 100 1000 10000 100000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VCC = 10V
IC = 2mA
RL = 100Ω
NORMALIZED toff – (toff(R
BE
) / toff(open))
RBE – BASE RESISTANCE (kΩ)
Fig. 9 Normalized toff vs. RBE
Figure 11. Switching Time Test Circuit and Waveforms
Fig. 10 Dark Current vs. Ambient Temperature
SWITCHING SPEED (µs)
Fig. 7 Switching Speed vs. Load Resistor
R – LOAD RESISTOR (kΩ)
0.1 1 10 100
0.1
1
10
100
1000
Toff
Ton
Tf
IF = 10mA
VCC = 10V
TA = 25˚C
Tr
RBE – BASE RESISTANCE (kΩ)
NORMALIZED ton – (ton(R
BE
) / ton(open))
Fig. 8 Normalized ton vs. RBE
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC = 10V
IC = 2mA
RL = 100Ω
TA – AMBIENT TEMPERATURE
(°C)
020406080100
I
CEO
– COLLECTOR -EMITTER DARK CURRENT (nA)
0.001
0.01
0.1
1
10
100
1000
VCE = 10V
TA = 25°
C
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVEFORMS
trtf
INPUT
IF RL
RBE
VCC = 10V
OUTPUT
ton
10%
90%
toff
IC
Adjust IF to produce IC = 2mA
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 8
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Package Dimensions
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
7.62 (Typ.)
15° (Typ.)
0.20–0.30
0.20–0.30
10.16–10.80
Through Hole 0.4" Lead Spacing
Surface Mount
Rcommended Pad Layout
(1.78)
(2.54)
(1.52)
(7.49)
(10.54)
(0.76)
8.13–8.89
Note:
All dimensions in mm.
6.10–6.60
8.43–9.90
Pin 1
64
13
0.25–0.36
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
0.38 (Min.)
3.28–3.53
5.08
(Max.) 0.20–0.30
0.16–0.88
(8.13)
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 9
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Ordering Information
Marking Information
Option
Order Entry Identifier
(Example) Description
No option TIL111M Standard Through Hole Device
S TIL111SM Surface Mount Lead Bend
SR2 TIL111SR2M Surface Mount; Tape and Reel
T TIL111TM 0.4" Lead Spacing
V TIL111VM VDE 0884
TV TIL111TVM VDE 0884, 0.4" Lead Spacing
SV TIL111SVM VDE 0884, Surface Mount
SR2V TIL111SR2VM VDE 0884, Surface Mount, Tape and Reel
TIL111
1
2
6
43 5
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are
marked with date code ‘325’ or earlier are marked in portrait format.
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘7’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
V X YY
Q
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 10
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers
Carrier Tape Specification
Reflow Profile
4.0 ± 0.1
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
24.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
21.0 ± 0.1
4.5 ± 0.20
0.1 MAX 10.1 ± 0.20
9.1 ± 0.20
Ø1.5 ± 0.1/-0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
360
1.822°C/Sec Ramp up rate
33 Sec
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.2 11
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intended to be an exhaustive list of all such trademarks.
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™*
®
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Green FPS™e-Series™
Gmax™
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IntelliMAX™
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MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
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OPTOLOGIC®
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®
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™
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®*
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As used herein:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
First Production
TIL111M, TIL117M, MOC8100M — General Purpose 6-Pin Phototransistor Optocouplers