TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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December 2, 2004
1
Ka-Band 2W Power Amplifier TGA4516
Key Features
•30 - 40 GHz Bandwidth
•> 33 dBm Nominal Psat @ Pin = 20dBm
•18 dB Nominal Gain
•Bias: 6 V, 1050 mA Idq
(1.9A under RF Drive)
•0.15 um 3MI MMW pHEMT Technology
•Chip Dimensions: 2.79 x 2.315 x 0.1 mm
(0.110 x 0.091 x 0.004) in
Primary Applications
•Military Radar Systems
•Ka-Band Sat-Com
•Point to Point Radio
Preliminary Fixtured Data
VD = 6V, ID = 1050mA
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30 32 34 36 38 40
Frequency (GHz)
S-Parameters (dB)
S21
S22
S11
Pout @ Pin =20dBm
30
31
32
33
34
35
30 32 34 36 38 40
Frequency (GHz)
Pout (dBm)
Product Description
The TriQuint TGA4516 is a High Power MMIC
Amplifier for Ka-band applications. The part
is designed using TriQuint’s 0.15um power
pHEMT process. The small chip size is
achieved by utilizing TriQuint’s 3 metal layer
interconnect (3MI) design technology that
allows compaction of the design over
competing products.
The TGA4516 provides >33 dBm saturated
output power, and has typical gain of 18 dB at
a bias of 6V and 1050mA (Idq). The current
rises to 1.9A under RF drive.
This HPA is ideally suited for many
applications such as Military Radar Systems,
Ka-band Sat-Com, and Point-to-Point
Radios.
The TGA4516 is 100% DC and RF tested
on-wafer to ensure performance compliance.
Note: This Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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December 2, 2004
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SYMBOL PARAMETER VALUE NOTES
V+Positive Supply Voltage 8 V 2/
V-Negative Supply Voltage Range -5 TO 0 V
I+Positive Supply Current 3 A 2/ 3/
IGGate Supply Current 85 mA 3/
PIN Input Continuous Wave Power 267 mW
PDPower Dissipation 7.8 W 2/ 4/
TCH Operating Channel Temperature 150 oC5/ 6/
TMMounting Temperature (30 Seconds) 320 oC
TSTG Storage Temperature -65 to 150 oC
1/ These ratings represent the maximum operable values for this device.
2/Combinations of supply voltage, supply current, input power, and output power shall not
exceed PD.
3/Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of 70 oC, the median life
is 1E6 hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF).
For maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
6/ These ratings apply to each individual FET.
TGA4516
TABLE I
MAXIMUM RATINGS 1/
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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December 2, 2004
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TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25 OC, Nominal)
PARAMETER TYPICAL UNITS
Drain Operating 6V
Quiescent Current 1050 mA
Frequency Range 30 - 40 GHz
Small Signal Gain, S21 18 dB
Input Return Loss, S11 10 dB
Output Return Loss, S22 7dB
Power @ saturated, Psat 33 dBm
Q1- Q4 are 400 um FETs, Q5 is 2560 um FET, Q6 is 4160 um FET
SYMBOL PARAMETER MIN. MAX. UNITS
IDSS,Q1 Saturated Drain Current 80 240 mA
VBVGS,Q1 Breakdown Voltage Gate-Source -18 -8 V
VBVGD,Q1-Q6 Breakdown Voltage Gate-Drain -18 -11 V
VP,Q1-Q6 Pinch_off Voltage -1.5 -0.5 V
TGA4516
TABLE II
DC PROBE TESTS
(Ta = 25 OC, Nominal)
Parameter Test Conditions Tch
(oC)RθJC
(o
C/W)TM
(HRS)
RθJC Thermal Resistance
(channel to backside of carrier)
Vd = 6 V
Id = 1700 mA
Freq = 35 GHz
Pdiss = 7.8 W
150 10.2 1E+6
TABLE IV
THERMAL INFORMATION
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature.
Worst case is at saturated output power when DC power consumption rises to 10.6 W with 2.3 W RF power delivered to load.
Power dissipated is 8.2 W and the temperature rise in the channel is 84 °C. Baseplate temperature must be reduced to 66 °C to
remain below the 150 °C maximum channel temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Fixtured Performance
TGA4516 Pout @ Pin =20dBm
Vds=6V, Idq=1050mA
25
26
27
28
29
30
31
32
33
34
35
28 30 32 34 36 38 40 42
Frequency (GHz)
Pout (dBm)
Pin=20dBm
TGA4516
Vds=6V, Idq=1050mA
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
28 30 32 34 36 38 40 42
Frequency (GHz)
S-Parameters (dB)
S11
S22
S21
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Fixtured Performance
TGA4516 Pout vs. Pin
freq=35GHz, Vds=6V, Idq=1050mA
10
15
20
25
30
35
40
-10 -5 0 5 10 15 20 25
Pin (dBm)
Pout (dBm)
0
5
10
15
20
25
30
Gain (dB)
Pout
Large Signal Gain
TGA4516
TGA4516 Ids vs. Pin
freq=35GHz, Vds=6V, Idq=1050mA
10
15
20
25
30
35
40
-10 -5 0 5 10 15 20 25
Pin (dBm)
Pout (dBm)
1000
1200
1400
1600
1800
2000
2200
IDS (mA)
Pout
Ids
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Mechanical Drawing TGA4516
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Units: Millimeters [inches]
Thickness: 0.100 [0.004] (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad
Chipsize: 2.79 x 2.315 [0.110 x 0.091] +/- 0.51 [0.002]
RF Ground is backside of MMIC
Bond pad #1 (RF Input) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #2 (Vg2) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #3 (Vd12) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #4 (Vg3) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #5 (Vd3) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #6 (RF Output) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #7 (Vd3) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #8 (Vg3) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #9 (Vd12) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #10 (Vg2) 0.100 x 0.100 [0.004 x 0.004]
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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December 2, 2004
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Chip Assembly Diagram TGA4516
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA4516
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C (30 seconds max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 200°C.
