Zowie Technology Corporation
General Purpose Transistor
PNP Silicon
MMBT3906W 1
2
3
Rating Symbol Value Unit
Characteristic Symbol Min. Max. Unit
Collector-Emitter Voltage VCEO -40 Vdc
Collector-Base Voltage VCBO -40 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current-Continuous IC-200 mAdc
Characteristic Symbol Max. Unit
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oCPD225
1.8 mW
mW / oC
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oCPD
V(BR)CBO
300
2.4
-40 -
mW
mW / oC
Thermal Resistance Junction to Ambient 556 oC / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
V(BR)CEO -40 - Vdc
Vdc
OFF CHARACTERISTICS
R
JA
Thermal Resistance Junction to Ambient 417 oC / WR
JA
Junction and Storage Temperature
Collector-Base Breakdowe Voltage
( IC= -10 uAdc, IE=0 )
V(BR)EBO -5.0 - Vdc
Emitter-Base Breakdowe Voltage
( IE= -10 uAdc, IC=0 )
Collector-Emitter Breakdowe Voltage(3)
( IC=1.0mAdc, IB=0 )
IBL - -50 nAdc
Base Cutoff Current
( VCE= -30 Vdc, VEB= -3.0 Vdc )
ICEX - -50 nAdc
Collector Cutoff Current
( VCE= -30 Vdc, VEB= -3.0 Vdc )
MMBT3906W=2A
-55 to +150 oCTJ,TSTG
Zowie Technology Corporation11/2002
EMITTER
BASE
COLLECTOR
SOT-323
1
2
3
Zowie Technology Corporation
Characteristic Symbol Min. Max. Unit
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
HFE
60
80
100
60
30
-
-
300
-
-
-
ON CHARACTERISTICS(3)
VCE(sat) Vdc
DC Current Gain
( IC= -0.1 mAdc, VCE= -1.0 Vdc )
( IC= -1.0 mAdc, VCE= -1.0 Vdc )
( IC= -10 mAdc, VCE= -1.0 Vdc )
( IC= -50 mAdc, VCE= -1.0 Vdc )
( IC= -100 mAdc, VCE= -1.0 Vdc )
Collector-Emitter Saturation Voltage(3)
( IC= -10 mAdc, IB=-1.0 mAdc )
( IC= -50 mAdc, IB= -5.0 mAdc ) -
--0.25
-0.4
VBE(sat) Vdc
Base-Emitter Saturation Voltage(3)
( IC= -10 mAdc, IB= -1.0 mAdc )
( IC= -50 mAdc, IB= -5.0 mAdc ) -0.65
--0.85
-0.95
fT
Cobo
250
-
-
4.5
MHZ
SMALL-SIGNAL CHARACTERISTIC
Cibo pF
pF
Current-Gain-Bandwidth Product
( IC= -10 mAdc, VCE= -20 Vdc, f=100 MHZ )
Output Capacitance
( VCB= -5.0 Vdc, IE=0, f=1.0 MHZ )
Input Capacitance
( VEB= -0.5 Vdc, IC=0, f=1.0 MHZ )
Input Impedance
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )
- 10
hie k ohms2.0 12
Voltage Feedback Ratio
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ ) hre X 10-4
0.1 10
Small-Signal Current Gain
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ ) hfe -100 400
Output Admittance
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ ) hoe u mhos3.0 60
Noise Figure
( VCE= -5.0 Vdc, IC= -100 uAdc, RS=1.0 k ohm, f=1.0 kHZ ) NFdB- 4.0
tr
td - 35
SWITCHING CHARACTERISTICS
ts
nS
Rise Time
Delay Time
Storage Time
- 35
tf nS
Fall Time
( VCC= -3.0 Vdc, VBE= -0.5 Vdc,
IC= -10 mAdc, IB1= -1.0 mAdc )
( VCC= -3.0 Vdc,
IC= -10 mAdc, IB1=IB2= -1.0 mAdc ) -
-
225
75
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle 2.0%.
Zowie Technology Corporation11/2002
Zowie Technology Corporation
11/2002
Zowie Technology Corporation
Figure 1. Delay and Rise Time
Equivalent Test Circuit Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916 CS < 4 pF*
3 V
275
10 k
CS < 4 pF*
< 1 ns
±0.5 V
10.6 V 300 ns
DUTY CYCLE = 2%
< 1 ns
10.9 V
+9.1 V
DUTY CYCLE = 2%
t1
0
10 < t1< 500us
* Total shunt capacitance of test jig and connectors
REVERSE BIAS ( VOLTS )
2.0
3.0
5.0
7.0
10
1.0
0.1
IC, COLLECTOR CURRENT ( mA )
5000
1.0
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE ( pF )
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
Cibo
Cobo
TJ=25oC
TJ=125oC
TYPICAL TRANSIENT CHARACTERISTICS
VCC=40 V
IC/IB=10
Figure 3. Capacitance Figure 4. Charge Data
QTQA
Figure 5. Turn-On Time
IC, COLLECTOR CURRENT ( mA )
70
100
200
300
500
50
Figure 6. Fall Time
IC, COLLECTOR CURRENT ( mA )
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
tr, RISE TIME ( ns )
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
td @ VOB=0 V
tr @ VCC=3.0 V
IC/IB=10
40 V
15 V
2.0 V
VCC=40 V
IB1=IB2
IC/IB=20
IC/IB=10
MMBT3906W
Zowie Technology Corporation
11/2002
Zowie Technology Corporation
Figure 7.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
NF, NOISE FIGURE ( bB )
00.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
Figure 8.
RS, SOURCE RESISTANCE ( k OHMS )
0
4
6
8
10
12
2
NF, NOISE FIGURE ( bB )
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
SOURCE RESISTANCE=200
I
C
=1.0 mA
SOURCE RESISTANCE=200
I
C
=0.5 mA
SOURCE RESISTANCE=2.0 K
SOURCE RESISTANCE=2.0 K
I
C
=50uA
f = 1.0 KHZIC =1.0 mA
IC =0.5 mA
IC =50 uA
IC =100 uA
TYPICAL TRANSIENT CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE= -5.0Vdc, TA=25oC, Bandwidth=1.0HZ)
h PARAMETERS
(VCE= -10Vdc, f=1.0 kHZ, TA=25oC)
Figure 9. Current Gain
IC, COLLECTOR CURRENT ( mA ) Figure 10. Output Admittance
Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT ( mA )
hfe, DC CURRENT GAIN
hoe, OUTPUTADMITTANCE (umhos)
IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA )
hre, VOLTAGE FEEDBACK RATIO(X 10-4)
hie, INPUT IMPEDANCE (k OHMS)
70
100
200
300
50
30
100
50
10
20
30
7
5
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
2.0
3.0
5.0
7.0
10
1.0
0.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 7.0 10
0.3 0.5 0.7 3.0
MMBT3906W
Zowie Technology Corporation
11/2002
Zowie Technology Corporation
Figure 17. " ON " Voltage
Figure 14. Collector Saturation Region
Figure 16. Temperature Coefficients
IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA )
V, VOLTAGE ( VOLTS )
IB, BASE CURRENT ( mA )
0.4
0.6
0.8
1.0
0.2
0.1
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.00.070.050.030.020.01
I
C
= 1.0 mA 10 mA 30 mA 100 mA
T
J
= 25
o
C
0.4
0.6
0.8
1.0
0.2
1.0 2.0 5.0 10 20 50
0100
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
-1.0
-1.5
-2.0
200
VB FOR VBE(sat)
VC FOR VCE(sat) +25oC to +125oC
-55oC to +25oC
-55oC to +25oC
+25oC to +125oC
VBE(sat) @ IC/IB=10
VCE(sat) @ IC/IB=10
VBE @ ICE=1.0 V
Figure 13. DC Current Gain
IC, COLLECTOR CURRENT ( mA )
0.3
0.5
0.7
1.0
2.0
0.2
0.1
hFE, DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1 100
1.00.7 200
30205.0 7.0
TYPICAL STATIC CHARACTERISTICS
TJ = +25oC
TJ = -55oC
TJ = +125oC
VCE=1.0V
V, TEMPERATURE COEFFICIENTS (mV /
o
C)
MMBT3906W
