TC105 PFM/PWM Step-Down DC/DC Controller Features Package Type * * * * 57A (Typ) Supply Current 1A Output Current 0.5A Shutdown Mode 300kHz Switching Frequency for Small Inductor Size * Programmable Soft-Start * 92% Typical Efficiency * Small Package: 5-Pin SOT-23A 5-Pin SOT-23A SHDN 5 4 TC105 Applications * * * * * * * VOUT 1 2 3 EXT VDD GND NOTE: 5-Pin SOT-23A is equivalent to the EIAJ SC-74A Palmtops Battery-Operated Systems Portable Instruments Positive LCD Bias Generators Portable Communicators Hand-Held Scanners 5V to 3V Down Converters General Description The TC105 is a step-down (Buck) switching controller that furnishes output currents of up to 1A (max) while delivering a typical efficiency of 92%. The TC105 normally operates in pulse width modulation mode (PWM), but automatically switches to pulse frequency modulation (PFM) at low output loads for greater efficiency. Oscillator frequency is 300kHz, allowing use of small (22H) inductors. Supply current draw is only 102A (max), and is reduced to less than 0.5A when the SHDN input is brought low. Regulator operation is suspended during shutdown. The TC105 accepts a maximum input voltage of 10V. Device Selection Table Part Number Output Voltage (V)* Package Osc. Freq. (kHz) Operating Temp. Range TC105503ECT 5.0 5-Pin SOT-23A 300 -40C to +85C TC105333ECT 3.3 5-Pin SOT-23A 300 -40C to +85C TC105303ECT 3.0 5-Pin SOT-23A 300 -40C to +85C The TC105 is available in a small 5-Pin SOT-23A package, occupies minimum board space and is ideal for a wide range of applications. *Other output voltages are available. Please contact Microchip Technology Inc. for details. Functional Block Diagram L1 22H (Sumida CD54) 3.3V VOUT RSS 470K D1 MA737 5 4 VOUT CSS 0.033F OFF ON (From System Control Logic) C2 47F 10V Tantalum SHDN TC105333ECT EXT VDD GND 1 2 3 Si 9430 P + VBATT 6V - NiMH C1 10F/16V 3.3V Regulated Supply Using 6V NiMH Battery Pack Input 2002 Microchip Technology Inc. DS21349B-page 1 TC105 1.0 ELECTRICAL CHARACTERISTICS *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings* Voltage on VDD ....................................... -0.3V to +12V EXT Output Current ........................................100mA Voltage on VOUT, EXT, SHDN Pins .....................................-0.3V to VDD +0.3V Power Dissipation.............................................150mW Operating Temperature Range............. -40C to +85C Storage Temperature Range .............. -40C to +125C TC105 ELECTRICAL SPECIFICATIONS Electrical Characteristics: Note 1, fOSC = 300 kHz; TA = 25C, unless otherwise noted. Symbol Parameter Min Typ Max Units Test Conditions VDD Operating Supply Voltage 2.2 -- 10.0 V VDD MIN Minimum Input Voltage 0.9 -- 2.2 V IDD Operating Supply Current -- -- 57 67 102 122 A No external components; VR = 3.0V, 3.3V VOUT = 0V, SHDN = VIN VR = 5.0V ISTBY Standby Supply Current -- -- 15 16 27 29 A No external components; VR = 3.0V, 3.3V VOUT = SHDN = VIN VR = 5.0V ISHDN Shutdown Supply Current fOSC Oscillator Frequency VOUT Output Voltage DTYMAX Maximum Duty Cycle (PWM Mode) DTYPFM Duty Cycle (PFM Mode) SHDN Input Logic High VIH EXT = High; No external components; VOUT = 0V, SHDN = VIN -- -- 0.5 A SHDN = GND 255 300 345 kHz VIN = VOUT + 0.3V VR x 0.975 VR VR x 1.025 100 -- -- % 15 25 35 % IOUT = 0mA 0.65 -- -- V VOUT = 0V, No external components Note 2 VIL SHDN Input Logic Low -- -- 0.20 V VOUT = 0V, No external components REXTH EXT ON Resistance to VDD -- -- -- 17 16 12 24 22 17 No external components; VR = 3.0V VR = 3.3V VR = 5.0V VOUT = SHDN = VIN , VEXT = (VIN - 0.4V) REXTL EXT ON Resistance to GND -- -- -- 15 14 10 20 19 14 No external components; VR = 3.0V VR = 3.3V VR = 5.0V VOUT = 0V, SHDN = VIN, VEXT = 0.4V Efficiency -- 92 -- % Note 1: 2: VR = 3.0V, VIN = 4.5V, IOUT = 200mA VR = 3.3V, VIN = 5.0V, IOUT = 220mA VR = 5.0V, VIN = 7.5V, IOUT = 320mA VR is the factory output voltage setting. DS21349B-page 2 2002 Microchip Technology Inc. TC105 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: PIN FUNCTION TABLE Pin No. (5-Pin SOT-23A) Symbol 1 EXT Description Switch transistor control output. This terminal connects to the gate of an external P-channel MOSFET (or to the base of an external PNP transistor through a current limiting resistor). 2 VDD Power supply voltage input. 3 GND Ground terminal. 4 SHDN Shutdown input (active low). The device enters a low power shutdown state when this input is brought low. During shutdown, regulator action is suspended, and supply current is reduced to less than 0.5A. The device resumes normal operation when SHDN is again brought high. 5 VOUT Voltage sense input. This input senses output voltage for regulation and must be connected to the output voltage node as shown in the application schematic in this data sheet. 2002 Microchip Technology Inc. DS21349B-page 3 TC105 3.0 DETAILED DESCRIPTION The TC105 is a PFM/PWM step-down DC/DC controller for use in systems operating from two or more cells, or in line-powered applications. It uses PWM as the primary modulation scheme, but automatically converts to PFM at output duty cycles less than approximately 10%. The conversion to PFM provides reduced supply current, and therefore higher operating efficiency at low loads. The TC105 uses an external switching transistor, allowing construction of switching regulators with output currents of up to 1A. The TC105 consumes only 102A, max, of supply current when VIN = 5V and VOUT = 3.3V, and can be placed in a 0.5A shutdown mode by bringing the shutdown input (SHDN) low. The regulator remains disabled while in shutdown mode, and output voltage discharges to zero through the load. Normal operation resumes when SHDN is brought high. Other features include a built-in undervoltage lockout (UVLO) and externally programmable soft start time. 3.1 Low Power Shutdown Mode The TC105 enters a low power shutdown mode when SHDN is brought low. While in shutdown, the oscillator is disabled and the output switch is shut off. Normal regulator operation resumes when SHDN is again brought high. SHDN may be tied to the input supply if not used. 3.2 Soft Start Soft start allows the output voltage to gradually ramp from 0 to rated output value during start-up. This action minimizes (or eliminates) overshoot, and in general, reduces stress on circuit components. Figure 4-1 shows the circuit required to implement soft start (values of 470K and 0.033F for R SS and CSS respectively, are adequate for most applications). 3.3 Undervoltage Lockout (UVLO) The TC105 is disabled when VIN is below the undervoltage lockout threshold. This threshold is equal to the guaranteed minimum operating voltage for the TC105 (i.e., 2.2V). When UVLO is active, the TC105 is completely disabled. DS21349B-page 4 3.4 Input Bypass Capacitors Using an input bypass capacitor reduces peak current transients drawn from the input supply and reduces the switching noise generated by the regulator. The source impedance of the input supply determines the size of the capacitor that should be used. 3.5 Output Capacitor The effective series resistance of the output capacitor directly affects the amplitude of the output voltage ripple. (The product of the peak inductor current and the ESR determines output ripple amplitude.) Therefore, a capacitor with the lowest possible ESR should be selected. Smaller capacitors are acceptable for light loads or in applications where ripple is not a concern. The Sprague 595D series of tantalum capacitors are among the smallest of all low ESR surface mount capacitors available. Table 4-1 lists suggested components and suppliers. 3.6 Inductor Selection Selecting the proper inductor value is a trade-off between physical size and power conversion requirements. Lower value inductors cost less, but result in higher ripple current and core losses. They are also more prone to saturate since the coil current ramps faster and could overshoot the desired peak value. This not only reduces efficiency, but could also cause the current rating of the external components to be exceeded. Larger inductor values reduce both ripple current and core losses, but are larger in physical size and tend to increase the start-up time slightly. A 22H inductor is recommended as the best overall compromise. For highest efficiency, use inductors with a low DC resistance (less than 20 m). To minimize radiated noise, consider using a toroid, pot core or shielded-bobbin inductor. 3.7 Output Diode The high operating frequency of the TC105 requires a high-speed diode. Schottky diodes such as the MA737 or 1N5817 through 1N5823 (and the equivalent surface mount versions) are recommended. Select a diode whose average current rating is greater than the peak inductor current and whose voltage rating is higher than VDDMAX. 2002 Microchip Technology Inc. TC105 3.8 External Switching Transistor Selection EXT is a complementary output with a maximum ON resistance of 22 to V DD when high and 19 to ground when low. It is designed to directly drive a P-channel MOSFET or a PNP bipolar transistor through a base current limiting resistor (Figure 4-2). A PNP transistor is recommended in applications where VIN is less than 2.5V. Otherwise, a P-channel MOSFET is preferred as it affords the highest efficiency because it does not draw any gate drive current. However, P-channel MOSFETs are typically more expensive than bipolar transistors. 3.8.1 BOARD LAYOUT GUIDELINES As with all inductive switching regulators, the TC105 generates fast switching waveforms, which radiate noise. Interconnecting lead lengths should be minimized to keep stray capacitance, trace resistance and radiated noise as low as possible. In addition, the GND pin, input bypass capacitor and output filter capacitor ground leads should be connected to a single point. The input capacitor should be placed as close to power and ground pins of the TC105 as possible. The length of the EXT trace must also be kept as short as possible. P-channel MOSFET selection is determined mainly by the on-resistance, gate-source threshold, and gate charge requirements. Also, the drain-to-source and gate-to-source breakdown voltage ratings must be greater than VDDMAX. The total gate charge specification should be less than 100nC for best efficiency. The MOSFET must be capable of handling the required peak inductor current, and should have a very low on-resistance at that current. For example, an Si9430 MOSFET has a drain-to-source rating of -20V, and a typical on-resistance rDSON of 0.07 at 2A, with VGS = -4.5V. Table 4-1 lists suppliers of external components recommended for use with the TC105. 2002 Microchip Technology Inc. DS21349B-page 5 TC105 4.0 APPLICATIONS 4.1 Circuit Examples FIGURE 4-1: SOFT START CIRCUIT RSS 470K Figure 4-3 shows a TC105 using a PNP switching transistor (Zetex FZT749) that has an hFE of 180 and VCESAT of 100 mV at IC = 1A. Other high beta transistors can be used, but the values of RB and CB may need adjustment if hFE is significantly different from that of the FZT749. + - 4 VIN CSS 0.033F SHDN/SS TC105 The circuit of Figure 4-4 utilizes a P-channel MOSFET switching transistor (Silconix Si9430). This transistor is a member of the LittlefootTM family of small outline MOSFETs. Shutdown Not Used RSS 470K SHDN + - 4 CSS 0.033F SHDN/SS OFF ON (From System Control Logic) TC105 Shutdown Used FIGURE 4-2: VIN EXTERNAL TRANSISTOR CONNECTION L P L + - D TC105 Q VIN + CL D RB + - - VOUT CL CB TC105 EXT EXT 1 1 P-Channel MOSFET DS21349B-page 6 VOUT PNP Bipolar Transistor 2002 Microchip Technology Inc. TC105 FIGURE 4-3: REGULATOR USING PNP TRANSISTOR FZ749 Q1 VIN 2.5V 22H Sumida CD-54 + + 10F 16V - MA737 47F 10V Tantalum - RSS 470K OFF ON VOUT + RB 500 CB 2200 pF - + - 4 5 FIGURE 4-4: VOUT 1.8V CSS 0.033F SHDN/SS TC105 EXT VDD GND 1 2 3 REGULATOR USING P-CHANNEL MOSFET Si9430 P 22H Sumida CD-54 VIN + 10F 16V - + MA737 47F 10V Tantalum - + 4 5 VOUT - VOUT RSS 470K OFF ON CSS 0.033F SHDN/SS TC105 TABLE 4-1: Type Surface Mount EXT VDD GND 1 2 3 SUGGESTED COMPONENTS AND SUPPLIERS Inductors Sumida CD54 Series CDRH Series Coilcraft DO Series Capacitors Transistors AVX TPS Series ON Semiconductor MBRS340T3 Silconix Little Foot MOSFET Series Sprague 595D Series Nihon NSQ Series Zetex FZT749 PNP Bipolar Transistor Matsushita MA737 Toshiba 2SA1213 PNP Transistor Miniature Through-Hole Sumida RCH Series Sanyo OS-CON Series Standard Through-Hole Coilcraft PCH Series Nichicon PL Series Coiltronics CTX Series United Chemi-Con LXF Series 2002 Microchip Technology Inc. Diodes IRC OAR Series ON Semiconductor TMOS Power MOSFETs (i.e., MTP30P06V) DS21349B-page 7 TC105 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 1 represents product classification; TC105 = M 2 represents first integer of voltage 4 Symbol (300kHz) Voltage 1 2 3 4 5 6 1. 2. 3. 4. 5. 6. DS21349B-page 8 3 represents first decimal of voltage Symbol (300kHz) Voltage A B C D E F H K L M .0 .1 .2 .3 .4 .5 .6 .7 .8 .9 represents production lot ID code 2002 Microchip Technology Inc. TC105 5.2 Taping Form Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices User Direction of Feed Device Marking W PIN 1 P Standard Reel Component Orientation TR Suffix Device (Mark Right Side Up) Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 8 mm 4 mm 3000 7 in 5-Pin SOT-23A 5.3 Package Dimensions SOT-23A-5 .075 (1.90) REF. .071 (1.80) .059 (1.50) .122 (3.10) .098 (2.50) .020 (0.50) .012 (0.30) PIN 1 .037 (0.95) REF. .122 (3.10) .106 (2.70) .057 (1.45) .035 (0.90) .006 (0.15) .000 (0.00) .010 (0.25) .004 (0.09) 10 MAX. .024 (0.60) .004 (0.10) Dimensions: inches (mm) 2002 Microchip Technology Inc. DS21349B-page 9 TC105 NOTES: DS21349B-page 10 2002 Microchip Technology Inc. TC105 Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2002 Microchip Technology Inc. DS21349B-page11 TC105 NOTES: DS21349B-page12 2002 Microchip Technology Inc. TC105 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, FilterLab, KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company's quality system processes and procedures are QS-9000 compliant for its PICmicro (R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001 certified. 2002 Microchip Technology Inc. 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