DATA SH EET
Product data sheet
Supersedes data of 2004 Mar 18 2004 Aug 05
DISCRETE SEMICONDUCTORS
PDTC143E series
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
2004 Aug 05 2
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
FEATURES
•Built-in bias resistors
•Simplified circuit design
•Reduction of component count
•Reduced pick and place costs.
APPLICATIONS
•General purpose switc hing and amplification
•Inverter and interface c ir cu i ts
•Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped tran sistor (see “Simplified outline,
symbol and pinning” for pac kage details).
SYMBOL PARAMETER TYP. MAX. UNIT
VCEO collector-emitter
voltage −50 V
IOoutput curr en t (DC) −100 mA
R1 bias resistor 4.7 −kΩ
R2 bias resistor 4.7 −kΩ
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER PACKAGE MARKING CODE(1) PNP COMPLEMENT
PHILIPS EIAJ
PDTC143EE SOT416 SC-75 02 PDTA143EE
PDTC143EEF SOT490 SC-89 51 PDTA143EEF
PDTC143EK SOT346 SC-59 02 PDTA143EK
PDTC143EM SOT883 SC-101 E1 PDTA143EM
PDTC143ES SOT54 (TO-92) SC-43 TC143E PDTA143ES
PDTC143ET SOT23 −*02 PDTA143ET
PDTC143EU SOT323 SC-70 *02 PDTA143EU
2004 Aug 05 3
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING
PIN DESCRIPTION
PDTC143ES 1base
2collector
3emitter
PDTC143EE 1base
PDTC143EEF 2emitter
PDTC143EK 3collector
PDTC143ET
PDTC143EU
PDTC143EM 1base
2emitter
3collector
handbook, halfpage
MAM364
1
2
3
R1
R2
2
3
1
handbook, halfpage
MDB269
1
2
3
Top view
R1
R2
12
3
handbook, halfpage
MHC506
1
2
3
R1
R2
2
1
3
bottom view
2004 Aug 05 4
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PDTC143EE −plastic surface mounted package; 3 leads SOT416
PDTC143EEF −plastic surface mounted package; 3 leads SOT490
PDTC143EK −plastic surface mounted package; 3 leads SOT346
PDTC143EM −leadless ultra small plastic package; 3 solder lands; body
1.0 × 0.6 × 0.5 mm SOT883
PDTC143ES −plastic single-ended leaded (t hrough hole) package; 3 leads SOT54
PDTC143ET −plastic surface mounted package; 3 leads SOT23
PDTC143EU −plastic surface mounted package; 3 leads SOT323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −50 V
VCEO collector-emitter voltage open base −50 V
VEBO emitter-base voltage open collector −10 V
VIinput voltage
positive −+30 V
negative − −10 V
IOoutput current (DC) −100 mA
ICM peak collector current −100 mA
Ptot total power dissipation Tamb ≤ 25 °C
SOT54 note 1 −500 mW
SOT23 note 1 −250 mW
SOT346 note 1 −250 mW
SOT323 note 1 −200 mW
SOT416 note 1 −150 mW
SOT883 notes 2 and 3 −250 mW
SOT490 notes 1 and 2 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2004 Aug 05 5
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
THERMAL CHARACTE RISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air
SOT54 note 1 250 K/W
SOT23 note 1 500 K/W
SOT346 note 1 500 K/W
SOT323 note 1 625 K/W
SOT416 note 1 833 K/W
SOT883 notes 2 and 3 500 K/W
SOT490 notes 1 and 2 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 50 V; IE = 0 A −−100 nA
ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A −−1μA
VCE = 30 V; IB = 0 A; Tj = 150 °C−−50 μA
IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 A −−900 μA
hFE DC current gain VCE = 5 V; IC = 10 mA 30 − −
VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA −−150 mV
Vi(off) input-off voltage IC = 100 μA; VCE = 5 V −1.1 0.5 V
Vi(on) input-on voltage IC = 20 mA; VCE = 0.3 V 2.5 1.9 −V
R1 input resistor 3.3 4.7 6.1 kΩ
resistor ratio 0.8 11.2
Cccollector capacitance IE = ie = 0 A; VCB = 10 V;
f = 1 MHz −−2.5 pF
R2
R1
--------
2004 Aug 05 6
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
PACKAGE OUTLINES
UNIT A1
max bpcDEe1HELpQw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1 0.30
0.15 0.25
0.10 1.8
1.4 0.9
0.7 0.5
e
11.75
1.45 0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT416 SC-75
wM
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
EAB
B
vMA
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface-mounted package; 3 leads SOT41
6
04-11-04
06-03-16
2004 Aug 05 7
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT A
1
b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.35 0.26
0.10 3.1
2.7 1.7
1.3 0.95
e
1.9 3.0
2.5 0.33
0.23 0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346 TO-236 SC-59A
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0 1 2 mm
scale
A
1.3
1.0 0.1
0.013
c
X
12
3
Plastic surface-mounted package; 3 leads SOT34
6
04-11-11
06-03-16
2004 Aug 05 8
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT A1
max.
A(1) bb
1e1
eLL
1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.46 0.20
0.12 0.55
0.47
0.03 0.62
0.55 0.35 0.65
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
0.30
0.22
0.30
0.22
SOT883 SC-101 03-02-05
03-04-03
DE
1.02
0.95
L
E
2
3
1
b
b1
A1
A
D
L1
0 0.5 1 mm
scale
L
eadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT88
3
e
e1
2004 Aug 05 9
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 04-06-28
04-11-16
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT5
4
e1e
1
2
3
2004 Aug 05 10
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Aug 05 11
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT32
3
04-11-04
06-03-16
2004 Aug 05 12
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
UNIT bpcDE e1HELpwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
05-07-28
06-03-16
IEC JEDEC JEITA
mm 0.33
0.23 0.2
0.1 1.7
1.5 0.95
0.75 0.5
e
1.0 1.7
1.5 0.1
0.1
DIMENSIONS (mm are the original dimensions)
0.5
0.3
SOT490 SC-89
bp
D
e1
e
A
Lp
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
0.8
0.6
c
X
12
3
Plastic surface-mounted package; 3 leads SOT49
0
2004 Aug 05 13
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩPDTC143E series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the la test version.
Printed in The Netherlands R75/09/pp14 Date of release: 2004 Aug 05 Document orde r number: 9397 750 13674