BT151-500RT,127 - NXP Semiconductors

BT151-500RT

SCR

27 July 2012 Product data sheet

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1. Product profile

1.1 General description

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic

package intended for use in applications requiring good bidirectional blocking voltage

capability, high surge current capability, high junction temperature capability and high

thermal cycling performance.

1.2 Features and benefits

•Good bidirectional blocking voltage capability

•High junction operating temperature capability

•High surge current capability

•High thermal cycling performance

•Planar passivated for voltage ruggedness and reliability

1.3 Applications

•Capacitive Discharge Ignition (CDI)

•Crowbar protection

•Inrush protection

•Motor control

•Voltage regulation

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-

state voltage

- - 500 V

VRRM repetitive peak reverse

voltage

- - 500 V

half sine wave; Tj(init) = 25 °C;

tp = 8.3 ms

- - 132 AITSM non-repetitive peak on-

state current

half sine wave; Tj(init) = 25 °C;

tp = 10 ms; Fig. 4; Fig. 5

- - 120 A

Tjjunction temperature - - 150 °C

IT(RMS) RMS on-state current half sine wave; Tmb ≤ 133 °C; Fig. 1;

Fig. 2; Fig. 3

- - 12.5 A

NXP Semiconductors BT151-500RT

SCR

Product data sheet 27 July 2012 2 / 11

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 6 - 2 15 mA

2. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K cathode

2 A anode

3 G gate

mb A mounting base; connected to

anode

1 2

TO-220AB (SOT78)

sym037

A K

3. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BT151-500RT TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage - 500 V

VRRM repetitive peak reverse voltage - 500 V

IT(AV) average on-state current half sine wave; Tmb ≤ 133 °C - 8 A

IT(RMS) RMS on-state current half sine wave; Tmb ≤ 133 °C; Fig. 1;

Fig. 2; Fig. 3

- 12.5 A

half sine wave; Tj(init) = 25 °C;

tp = 8.3 ms

- 132 AITSM non-repetitive peak on-state

current

half sine wave; Tj(init) = 25 °C;

tp = 10 ms; Fig. 4; Fig. 5

- 120 A

NXP Semiconductors BT151-500RT

SCR

Product data sheet 27 July 2012 3 / 11

Symbol Parameter Conditions Min Max Unit

I2t I2t for fusing tp = 10 ms; SIN - 72 A2s

dIT/dt rate of rise of on-state current IT = 20 A; IG = 50 mA; dIG/dt = 50 mA/

µs

- 50 A/µs

IGM peak gate current - 4 A

VRGM peak reverse gate voltage - 5 V

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 1 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 150 °C

(

)

(

)

(

)

f = 50 Hz; Tmb = 133 °C

Fig. 1. RMS on-state current as a function of surge

duration; maximum values

0 5

(

)

(

)

(

)

133 °C

Fig. 2. RMS on-state current as a function of mounting

base temperature; maximum values

NXP Semiconductors BT151-500RT

SCR

Product data sheet 27 July 2012 4 / 11

003aad202

0 2 4 6 8

IT(AV) (A)

Ptot

(W)

a =

1.9

150

130.5

137

143.5

2.2

2.8

4.0

Tmb(max)

(°C)

conduction

angle

(degrees)

form

factor

120

180

2.8

2.2

1.9

1.57

α = conduction angle

a = form factor = IT(RMS) / IT(AV)

Fig. 3. Total power dissipation as a function of average on-state current; maximum values

003aad203

120

160

ITSM

(A)

number of cycles

1 103

102

Tj(init) = 25 °C max

ITITSM

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

NXP Semiconductors BT151-500RT

SCR

Product data sheet 27 July 2012 5 / 11

(

)

(

)

Tj(init) = 25 °C max

ITITSM

(1)

tp ≤ 10 ms

(1) dIT/dt limit

Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance

from junction to

ambient

in free air - 60 - K/W

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 6 - 2 15 mA

ILlatching current VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 7 - 10 40 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 8 - 7 20 mA

VTon-state voltage IT = 23 A; Tj = 25 °C; Fig. 11 - 1.4 1.75 V

VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 9 - 0.6 1.5 VVGT gate trigger voltage

VD = 500 V; IT = 0.1 A; Tj = 150 °C;

Fig. 9

0.25 0.4 - V

IDoff-state current VD = 500 V; Tj = 150 °C - 0.5 2.5 mA

Tj = 125 °C; VR = 500 V - 0.1 0.5 mAIRreverse current

Tj = 150 °C; VR = 500 V - 0.1 0.5 mA

NXP Semiconductors BT151-500RT

SCR

Product data sheet 27 July 2012 6 / 11

Symbol Parameter Conditions Min Typ Max Unit

Dynamic charateristics

dVD/dt rate of rise of off-state

voltage

VDM = 335 V; Tj = 150 °C; (VDM = 67%

of VDRM); gate open circuit; exponential

waveform; Fig. 10

- 300 - V/µs

tgt gate-controlled turn-on

time

ITM = 40 A; VD = 500 V; IG = 0.1 A; dIG/

dt = 5 A/µs; Tj = 25 °C

- 2 - µs

tqcommutated turn-off

time

VDM = 335 V; Tj = 150 °C; ITM = 20 A;

VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/

dt = 50 V/µs; RGK = 100 Ω; (VDM = 67%

of VDRM)

- 70 - µs

Tj (°C)

-50 1501000 50

003aab824

IGT

IGT(25°C)

Fig. 6. Normalized gate trigger current as a function of

junction temperature

Tj (°C)

-50 1501000 50

003aab825

IL(25°C)

Fig. 7. Normalized latching current as a function of

junction temperature

Tj (°C)

-50 1501000 50

003aab826

IH(25°C)

Fig. 8. Normalized holding current as a function of

junction temperature

Tj (°C)

-50 1501000 50

003aab823

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

Fig. 9. Normalized gate trigger voltage as a function of

junction temperature

NXP Semiconductors BT151-500RT

SCR

Product data sheet 27 July 2012 7 / 11

003aab827

103

102

104

dVD/dt

(V/µs)

Tj (°C)

0 15010050

gate open circuit

Fig. 10. Critical rate of rise of off-state voltage as a function of junction temperature; typical values

0 1

)

(

)

(

)

(

)

(

)

Vo = 0.825 V; Rs = 0.41 Ω

(1) Tj = 150°C; typical values

(2) Tj = 150°C; maximum values

(3) Tj = 25°C; maximum values

Fig. 11. On-state current as a function of on-state voltage

NXP Semiconductors BT151-500RT

SCR

Product data sheet 27 July 2012 8 / 11

7. Package outline

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT78

08-04-23

08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

mm 4.7

4.1

1.40

1.25

0.9

0.6

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0

12.8

3.30

2.79

3.8

3.5

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.6

1.0

c D

1.3

1.0

b2(2) D1E e

2.54

L L1(1) L2(1)

max.

3.0

p q

3.0

2.7

2.6

2.2

1 2 3

L1(1)

b1(2)

(3×)

b2(2)

(2×)

e e

b(3×)

L2(1)

mounting

base

Fig. 12. TO-220AB (SOT78)

NXP Semiconductors BT151-500RT

SCR

Product data sheet 27 July 2012 9 / 11

8. Legal information

8.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

8.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local NXP

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

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customer have explicitly agreed otherwise in writing. In no event however,

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is deemed to offer functions and qualities beyond those described in the

Product data sheet.

8.3 Disclaimers

Limited warranty and liability — Information in this document is believed

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or completeness of such information and shall have no liability for the

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Notwithstanding any damages that customer might incur for any reason

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limitation specifications and product descriptions, at any time and without

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their

applications and products using NXP Semiconductors products, and NXP

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the NXP Semiconductors product is suitable and fit for the

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associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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NXP Semiconductors BT151-500RT

SCR

Product data sheet 27 July 2012 10 / 11

grant, conveyance or implication of any license under any copyrights, patents

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In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without NXP Semiconductors’ warranty

of the product for such automotive applications, use and specifications, and

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Translations — A non-English (translated) version of a document is for

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8.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors BT151-500RT

SCR

Product data sheet 27 July 2012 11 / 11

9. Contents

1 Product profile ....................................................... 1

1.1 General description .............................................. 1

1.2 Features and benefits ...........................................1

1.3 Applications .......................................................... 1

1.4 Quick reference data ............................................ 1

2 Pinning information ............................................... 2

3 Ordering information ............................................. 2

4 Limiting values .......................................................2

5 Thermal characteristics .........................................5

6 Characteristics .......................................................5

7 Package outline ..................................................... 8

8 Legal information ...................................................9

8.1 Data sheet status ................................................. 9

8.2 Definitions .............................................................9

8.3 Disclaimers ...........................................................9

8.4 Trademarks ........................................................ 10

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 27 July 2012