po . FAIRCHILD April 1996 a SEMICONDUCTOR lm NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power B 15A, GOV. Rosin = 0-10 @ Vag = 5V field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching " Critical DC electrical parameters specified at elevated performance, and withstand high energy pulses in the temperature. avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, = Low drive requirements allowing operation directly from logic rivers. Ves < 2.0V. @ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. and other battery powered circuits where fast switching, = 175C maximum junction temperature rating. low in-line power loss, and resistance to transients are eu . ign needed. High density cell design for extremely low Rycioxy- = = TO-220 and TO-263 (DPAK) package for both through hole and surface mount applications. 0 D / \ Ut Go / \ / G G D TO-220 TO-263AB NDP Series NDB Series Ss Absolute Maximum Ratings _T, = 25C unless otherwise noted Symbol | Parameter NDP4060L NDB4060L Units Voss Drain-Source Voltage 60 Voor Drain-Gate Voltage (Rg, < 1 MO) 60 Vesgs Gate-Source Voltage - Continuous +16 - Nonrepetitive (t,< 50 js) 25 ly Drain Current - Continuous 15 A - Pulsed 45 P, Total Power Dissipation @ T, = 25C 50 Ww Derate above 25C 0.33 wre Ti.T ere Operating and Storage Temperature -65 to 175 C L Maximum lead temperature for soldering 275 C purposes, 1/8" from case for 5 seconds 4-185 NDP4060L Rev. B / NDB4060L Rev. C 1O90PEGN/1090PdGNNDP4060L/NDB4060L Electrical Characteristics (1, = 25C unless otherwise noted) Symbol | Parameter Conditions | Min | Typ | Max | Units DRAIN-SOURCE AVALANCHE RATINGS (ote 1) Woes Single Pulse Drain-Source Avalanche Vop = 25 V, 1, = 15A 40 mJ Energy leg Maximum Drain-Source Avalanche Current 15 A OFF CHARACTERISTICS BV oss Drain-Source Breakdown Voltage Veg =O V, |= 250 pA 60 Vv loss Zero Gate Voltage Drain Current Vag = 60V, Veg= OV 250 T, =125C 1 mA lesse Gate - Body Leakage, Forward Vag = 16 V, Vag = OV 100 nA lasse Gate - Body Leakage, Reverse Vag = 716 V, Vig= OV -100 nA ON CHARACTERISTICS (note 1) Vesini Gate Threshold Voltage Vog = Vas: Ip = 250 WA 1 15 2 Vv [r,=125 | 06s | 14 | 15 Pasion Static Drain-Source On-Resistance Vog= 5 V1, =7.5A 0.085 | 0.1 Q [T, =125C 0.14 | 0.16 Veg = 10 V, 1, =15A 0.07 | 0.08 lejony On-State Drain Current Vog = 5 V, Vag = 10 V 15 Ors Forward Transconductance Vog=10V, 1, =7.5A 3 8 s DYNAMIC CHARACTERISTICS C.. Input Capacitance Vong = 25 V, Veg = OV, 510 600 | pF C.., | Output Capacitance f= 1.0 MHz 170 | 200 | pF C.., Reverse Transfer Capacitance 50 100 pF SWITCHING CHARACTERISTICS (note 1) tore Tum - On Delay Time Voy = 30V, 1, = 15A, 9 20 ns t Tum - On Rise Time Vos =5V, Rocy = 51 22, 151 | 250 | ns r Rgs = 51.2 boom Tum - Off Delay Time 35 100 ns t Tum - Off Fall Time 61 150 ns Q, Total Gate Charge Vos = 48 V, 1 17 nc Q,, Gate-Source Charge b= 15A, Veg =5V 2 nc Qu, Gate-Drain Charge 6.1 nc 4-1 86 NDP4060L Rev. 8 / NDB4060L Rev. CElectrical Characteristics (T, = 25C unless otherwise noted} S Symbol | Parameter Conditions | Min Typ | Max | Units | "gy DRAIN-SOURCE DIODE CHARACTERISTICS Ss I, Maximum Continuos Drain-Source Diode Forward Current 15 A 2 ly Maximum Pulsed Drain-Source Diode Forward Current 45 A Cc Vep Drain-Source Diode Forward Voltage Vog = OV, I= 7.5 A inote 1) 0.95 13 Vv z T, = 125C oes | 12 0 t, Reverse Recovery Time Veg = OVI, = 15A, 51 100 ns @ di ./dt = 100 Aus I, Reverse Recovery Current 3.6 7 A 2 THERMAL CHARACTERISTICS - Rac Thermal Resistance, Junction-to-Case 3 CW Raa Thermal Resistance, Junction-to-Ambient 62.5 CA Note: 1. Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0%. 4-4 87 NDP4060L Rev. B / NDB4060L Rev. CNDP4060L/NDB4060L Typical Electrical Characteristics . DRAIN-SOURCE CURRENT (A) g 0 1 2 3 4 Vpg DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics R DS(ON} IORMALIZED DRAIN-SOURCE ON-RESISTANCE 725 oO -50 ?5 0 75 100 Ty, JUNCTION TEMPERATURE (C) 125 150 Figure 3. On-Resistance Variation with Temperature 175 20 sen meer Ty = 85C fa Vos = 10V / 125C 16 |p. ORAIN CURRENT (A) 1 2 3 4 5 Ves , GATE TO SOURCE VOLTAGE () Figure 5. Transfer Characteristics R psion) NORMALIZED DRAIN-SOURCE ON-RESISTANCE V in NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE R gion) NORMALIZED DRAIN-SOURCE ON-RESISTANCE @ o nh iy @ 2 a 10 by . DRAIN CURRENT {A) 15 20 25 30 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 25 po Ves=5V | 168 [| / 26C 4 et J po _ 05 Go 5 10 15 20 256 30 tp . DRAIN CURRENT (A} Figure 4. On-Resistance Variation with Drain Current and Temperature 25 5 25 50 " 75 100 T, . JUNCTION TEMPERATURE (C} 125 150 Figure 6. Gate Threshold Variation with Temperature 4-188 NDP4060L Rev. 8 / NDB4060L Rev. CTypical Electrical Characteristics (continued) 1.15 w w 1425 t 4 141 = t a 3 1.075 gi N= & z g 1.05 23 4 o & < 1.025 Zz ow < z a 1 a oe Ww g 9 % 0.975 fd 23 wi @ 0.95 i @ 0.925 o a 0.9 60-25 O 2 60 75 100 125 150 175 Ty , JUNCTION TEMPERATURE (*C) Figure 7. Breakdown Voltage Variation with Temperature 1500 1000 = Ww 500 g : 8 > 2 200 w < o E 5 3 < a < 100 @ < ry e < 50 f=1 MHz 8 me" Veg = OV 8 Gs 2 20 0.4 0.2 0.5 1 2 5 10 20 50 Vos . DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics Figure 11. Switching Test Circuit oO. 0.01 0.001 0.2 04 Vgq, . BODY DIODE FORWARD VOLTAGE (V) 0.6 08 1 1.2 1.4 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature lp =7-5A Vpg = 12V fen . fo | Jo [a a 4 8 12 16 20 Qg , GATE CHARGE (nC) 24Vv Figure 10. Gate Charge Characteristics t tot INVERTED ~PULSE WIDTH -+| Figure 12. Switching Waveforms 4-189 NDP4060L Rev. B / NDB4060L Rev. C 10907EGN/10907dONNDP4060L/NDB4060L Typical Electrical Characteristics (continued) s(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE SEs TRANSCONDUCTANCE (SIEMENS) Vog = 10V Ty = 85C < e Zz w c Cg 2 a z z Ves = 10 a SINGLE PULSE - Rasc= 3 C/W Te = 25C Go 4 a 12 16 20 1 2 S 10 30 50 70 tp . BRAIN CURRENT (A) Vpg . ORAIN-SOURCE VOLTAGE (V) Figure 13. Transconductance Variation with Figure 14. Maximum Safe Operating Area Drain Current and Temperature o5 03 . Reic (= * Raye 02 Rac = 3.0 C/W 0.4 O14 4 05 Pipk} 0.05 Te ty ae 0.02 a ti & an Ty-Ta =P *Rayp it) o1 yeTe = 0.02 5 5 eb we Single Pulse : uty Cycle, D= ty 0.01 0.00001 0.00005 0.0001 0.0005 0.001 0.005 0.01 0.08 o1 0.5 1 t, ,TIME Figure 15. Transient Thermal Response Curve 4-4 90 NDP4O060L Rev. B / NDB4060L Rev. C