MP4211
2006-10-27
1
TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV inOne)
MP4211
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
• 4-V gate drivability
• Small package by full molding (SIP 10 pin)
• High drain power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C)
• Low drain-source ON resistance: RDS (ON) = 0.16 Ω (typ.)
• High forward transfer admittance: |Yfs| = 4.0 S (typ.)
• Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V)
I
DSS = −100 μA (max) (VDS = −60 V)
• Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS −60 V
Drain-gate voltage (RGS = 20 kΩ) VDGR −60 V
Gate-source voltage VGSS ±20 V
DC ID −5
Drain current
Pulse IDP −20
A
Drain power dissipation
(1-device operation, Ta = 25°C) PD 2.0 W
Drain power dissipation
(- device operation, Ta = 25°C) PDT 4.0 W
Single pulse avalanche energy
(Note 1) EAS 273 mJ
Avalanche current IAR −5 A
1-device
operation EAR 0.2
Repetitive avalanche
energy (Note 2)
4-device
operation EART 0.4
mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note 1: Condition for avalanche energy (single pulse) measurement
V
DD = −25 V, starting Tch = 25°C, L = 14.84 mH, RG = 25 Ω, IAR = −5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-25A1C
Weight: 2.1 g (typ.)
MP4211
2006-10-27
2
Array Configuration
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance from channel to
ambient
(4-device operation, Ta = 25°C)
ΣRth (ch-a) 31.2 °C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for t = 10 s)
TL 260 °C
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ― ― ±10 μA
Drain cut-off current IDSS VDS = −60 V, VGS = 0 V ― ― −100 μA
Drain-source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −60 ― ― V
Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ― −2.0 V
VGS = −4 V, ID = −2.5 A ― 0.24 0.28
Drain-source ON resistance RDS (ON)
VGS = −10 V, ID = −2.5 A ― 0.16 0.19
Ω
Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A 2.0 4.0 ― S
Input capacitance Ciss ― 630 ― pF
Reverse transfer capacitance Crss ― 95 ― pF
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
― 290 ― pF
Rise time tr ― 25 ―
Turn-on time ton ― 45 ―
Fall time tf ― 55 ―
Switching time
Turn-off time toff
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs
― 200 ―
ns
Total gate charge
(Gate-source plus gate-drain)
Qg ― 22 ― nC
Gate-source charge Qgs ― 16 ― nC
Gate-drain (“miller”) charge Qgd
VDD ≈ −48 V, VGS = −10 V, ID = −5 A
― 6 ― nC
−10 V
0 V
VGS
RL = 12 Ω
VDD ≈ −30 V
ID = −2.5 A
VOUT
4.7 Ω
1
3
2
5
4
10
7
6
9
8
MP4211
2006-10-27
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Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current IDR ― ― ― −5 A
Pulse drain reverse current IDRP ― ― ― −20 A
Diode forward voltage VDSF IDR = −5 A, VGS = 0 V ― ― 1.7 V
Reverse recovery time trr ― 80 ― ns
Reverse recovery charge Qrr
IDR = −5 A, VGS = 0 V
dIDR/dt = 50 A/μs ― 0.1 ― μC
Marking
MP4211
JAPAN Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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2006-10-27
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Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
Gate-source voltage VGS (V)
VDS – VGS
Drain-source voltage VDS (V)
)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain current ID (A)
|Yfs| – ID
Forward transfer admittance |Yfs| (S)
Drain current ID (A)
RDS (ON) – ID
Drain-source ON resistance
RDS (ON) (Ω)
−10
0
0
Common source
VDS = −10 V
100
25
Tc = −55°C
−2
−4
−6
−8
−2 −4 −6 −8 −10
0
0
Common source
Tc = 25°C
−2
ID = −5 A
−4
−3
−1
−0.4
−0.8
−1.2
−1.6
−2.0
−4 −8 −12 −16 −20
0.03
−0.1
VGS = −4 V
−10
Common source
Tc = 25°C
−0.3 −1 −3 −10 −30
0.05
0.1
0.3
0.5
1
3
0
0
Common source
Tc = 25°C
−2
−4
−6
−8
−10
−2 −4 −6 −8 −10
−4
VGS = −2 V
−3
−3.5
−10 −6
−8
−2.5
0
0
−4
VGS = −2 V
−3
−3.5
−10
−6
−8
Common source
Tc = 25°C
−2.5
−1
−2
−3
−4
−5
−0.4 −0.8 −1.2 −1.6 −2.0
−0.1
0.3
Common source
VDS = −10 V
100
25
Tc = −55°C
−0.3 −1 −3 −10 −30
0.5
1
3
5
10
30
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Drain-source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
Case temperature Tc (°C)
RDS (ON) – Tc
Drain-source ON resistance RDS (ON) (Ω)
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
Gate-source voltage VGS (V)
Total gate charge Qg (nC)
Dynamic Input/Output Characteristics
Drain-source voltage VDS (V)
Case temperature Tc (°C)
Vth – Tc
Gate threshold voltage Vth (V)
0
−80
ID = −5, −2.5, −1.2 A
−2.5
−1.2
VGS = −4 V
−40 0 40 80 120 160
0.2
0.4
0.6
0.8
1.0
Common source
ID = −5 A
VGS = −10 V
Common source
Tc = 25°C
−0.1
0 0.4 0.8 1.2 1.6 2.0
−0.3
−0.5
−1
−3
−5
−10
−30
VGS = 0, 1 V
−10
−3
−1
0
−80
Common source
VDS = −10 V
ID = −1 mA
−40 0 40 80 120 160
−0.4
−0.8
−1.2
−1.6
−2.0
0
0
−10
−20
−30
−40
−50
8 16 24 32 40
0
−4
−8
−12
−16
−20
VDD = −48 V
−12
−24
VDS
VGS
Common source
ID = −5 A
Tc = 25°C
Drain-source voltage VDS (V)
Safe Operating Area
Drain current ID (A)
−0.1
−1
IDP max
100 μs*
IDmax
100 ms*
−3 −10 −30 −100 −300
−0.3
−1
−3
−10
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
−30
1 ms*
10 ms*
30
−0.1 −0.3 −1 −3 −10 −30 −100
50
100
300
500
1000
3000
5000
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
Ciss
Coss
Crss
10000
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2006-10-27
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Ambient temperature Ta (°C)
PDT – Ta
Total power dissipation PDT (W)
Total power dissipation PDT (W)
ΔTch – PDT
Channel temperature increase ΔTch (°C)
Channel temperature Tch (°C)
EAS – Tch
Avalanche energy EAS (mJ)
1 2 3 4
0
160
40
80
120
5 0
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Circuit board
(1) (2) (3) (4)
rth – tw
Pulse width tw (s)
Transient thermal resistance rth (°C/W)
0
8
40
2
4
6
80 120 160 200 0
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Attached on a circuit board
Circuit board
(4)
(3)
(2)
(1)
TEST CIRCUIT TEST WAVE FORM
IAR
BVDSS
VDD V
DS
Peak IAR = −5 A, RG = 25 Ω
VDD = −25 V, L = 14.84 mH
−15 V
15 V
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
=
DD
VDSS
VDSS
2
AS V
B
B
··L·I
2
1
Ε
0
25
100
200
300
400
500
50 75 100 125 150
0.001 0.01 0.1 1 10 100 1000
0.5
-No heat sink/Attached on a circuit board-
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation Circuit board
1
3
10
30
100
300
Curves should be applied in thermal
limited area.
(Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
(4)
(3)
(1)
(2)
MP4211
2006-10-27
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RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
