wan eee fine a al MOTOROLA SC IXSTRS/R FT 9b DE Babes oO80557 i ae STEED T,_MUL UES 6367254 MOTOROLA SC (XSTRS/R FF). ~~. 98D 80557. 07+ 33+/7 MOTOROLA BD166 = SEMICONDUCTOR SEEaEEE BD168 = TECHNICAL DATA BD170 PLASTIC MEDIUM POWER 1.5 AMPERE ; SILICON PNP TRANSISTOR ; POWER TRANSISTOR . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. PNP SILICON @ OC Current Gainh,, = 40 (Min) @ ioe 0.16 Ade 45, 60, 80 VOLTS @ BD 166, 168, 170 are complementary with BD 165, 167, 169 20 WATTS MAXIMUM RATINGS Rating Symbol Type Value Unit BD 166 45 Collector-Emitter Voltage Voto BD 168 60 Vde BD 170 80 BD 166 45 Collactar-Base Voltage Veso BD 168 60 Vde 8D 170 80 Emitter-Base Voltage Veso 5 Vde Collector Current io 1.5 Ade Base Current . oy 0.5 Adc Total Device Dissipation @ T 4 = 25C Pp 1.25 Watts Derate above 25C 10 mwPc Total Device Dissipation @ Tg = 26C Pp 20 Watt Derate above 25C 160 mwPc Operating and Storage Junction Ty. Tstg ~65 to +150 C , Temperature Range _ THERMAL CHARACTERISTICS 8 F Characteristic Symbot Max Unit = u 1 mM Thermal Resistance, Junction to Casa 90 6.25 Cow tA a f ham A Thermal Resistance, Junction to Ambient iA 100 Sc t { ; ELECTRICAL CHARACTERISTICS 1, - 25-c union omnacunte notes) Pytn x : Characteristic Symbol | Type |MiniMax|Unit iz Collector-Emitter Sustaining Voltage * BY Vde s (lg=0.1 Adc, Ig =0) CEO | ppise | 45 | io, whos BD 168 60 | IG { t 8p 170, | 80 | Seely Collector Cutoff Current lego mAdc Mate (Vog 748 Wade, |, = 0) 8D 166 | [01 (Veg 760 Vide, 1. =0) BD 168 | |0.1 (Von 780 Vdc, I = 0) eo 170 | {01 Emitter Cutoff Current 'eBo ImAdc Dat smut (Vpg= 8.0 Vdc, |= 0) {1.0 t ret Ey 2 SE OC current Gain Mee i fi (ig 0.16 A, Vog2) 40 | " (2=0.5 AVec=2V) 16 | * ors Collector-Emitter Saturation Voltage Vor Vdc x 1 thins mus ReotoneD ri erieo BEA (p= 0.5 Adc, 1, ~0.05 Adc) (sat) jos zi Duron Lear wan watt Base-Emitter On Voltage Vee(on) . Vde (ia = 0.5 Adc, Vag = 2.0 Vide) |os6 CASE 77-05 Current-Gain-Bandwidth Product ty MHz TO-128 (l.=500mAdc, Ve = 2 Vdc. f= 1.0 MHz) 6.0 | Pulse Test: Pulse Width = 300 ps, Duty Cycle 2.0%. 3-291MOTOROLA SC fXSTRS/R FF ce : ae a _ . 8367254 MOTOROLA SC (XSTRS/R F) BD166, BD168, BD170 FIGURE 1. R-T, DERATING CURVE Pa, POWER DISSIPATION {WATTS} 0 2 40 8 8 100 120 140 160 Te, CASE TEMPERATURE(C) FIGURE 3 COLLECTOR SATURATION REGION {2 o8 o8 04 02 Veg COLLECTOR EMITTER VOLTAGE (VOLTS) FIGURE 4 CURRENT GAIN 10 i=] 8 = = s z z 31 - z & = 3 ou a - 01 0.01 005 of os 1 Ig COLLECTOR CURRENT {A} Note 1: There are two limitations on the power handling ability af a Wansistor; average junction temperature and second breakdown. Safe operating area curves indicate Ig - Veg limits of the transistor that must be observed forreliabie aperation; i.e., the transestor must not be subjected to greater dissipation than the curves indicate. Ig. BASE 96D 80558 Dp 7T-FF-19 FIGURE 2 . SAFE OPERATING AREA 10 5.0 30 26 1.0 O85 [BONDING WIRE LIMITED = = = = THERMALLY LIMITEO @ Tc PULSE APPLY BELOW 9 Vceo Ic, COLLECTOR CURRENT (AMP) 0.1 50 70 10 20 0 $0 0 100 Voge, COLLECTOR-EMITTER VOLTAGE (VOLTS) 50 500 1900 100 CURRENT {mA} FIGURE 5 _"ON" VOLTAGE 1 - Os 2 os nm VOLTAGE (VOLTS) Stk sig e10 001 10 $0 100 Ig, COLLECTOR CURRENT (A) 500 The data of Figure 2 is based on Tyipk) = 180C; To is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles 10 10% provided T Hpk) S180C, At high case temperatures, thermal timitations will reduce the power that can be handled to vatues less than the limitations imposed by second breakdown. {See AN-415) 3-292