ZDS020N60 Nch 600V 0.63A Power MOSFET Datasheet lOutline VDSS 600V RDS(on) (Max.) 5.0W ID 0.63A PD 2.0W (8) (7) SOP8 (SC-87) (6) (5) (1) (2) (3) (4) lFeatures lInner circuit 1) Low on-resistance. (1) (2) (3) (4) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. Source Source Source Gate (5) (6) (7) (8) Drain Drain Drain Drain *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Switching Power Supply Taping Reel size (mm) 330 Tape width (mm) 12 Type Basic ordering unit (pcs) Taping code 2,500 TB Marking ZDS020N60 lAbsolute maximum ratings(Ta = 25C) Parameter Symbol Value Unit VDSS 600 V ID *1 0.63 A ID,pulse *2 2.5 A VGSS 30 V Power dissipation (Tc = 25C) PD 2.0 W Junction temperature Tj 150 C Tstg -55 to +150 C Drain - Source voltage Continuous drain current Tc = 25C Pulsed drain current Gate - Source voltage Range of storage temperature www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.08 - Rev.B Data Sheet ZDS020N60 lThermal resistance Values Parameter Symbol RthJA Thermal resistance, junction - ambient Unit Min. Typ. Max. - - 62.5 C/W lElectrical characteristics(Ta = 25C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions VGS = 0V, ID = 1mA Unit Min. Typ. Max. 600 - - V 100 mA Zero gate voltage drain current IDSS VDS = 600V, VGS = 0V - Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 2.0 - 4.0 V - 4.4 5.0 W Gate threshold voltage Static drain - source on - state resistance www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. RDS(on) *3 VGS = 10V, ID = 0.5A 2/11 2012.08 - Rev.B Data Sheet ZDS020N60 lElectrical characteristics(Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. 0.05 0.5 - Transconductance gfs *3 VDS = 10V, ID = 0.5A Input capacitance Ciss VGS = 0V - 310 - Output capacitance Coss VDS = 10V - 145 - Reverse transfer capacitance Crss f = 1MHz - 40 - VDD 200V, VGS = 10V - 25 - tr *3 ID = 600mA - 20 - td(off) *3 RL = 333W - 65 - tf *3 RG = 50W - 65 - Turn - on delay time Rise time Turn - off delay time Fall time td(on) *3 S pF ns lGate Charge characteristics(Ta = 25C) Values Parameter Symbol Total gate charge Qg *3 Gate - Source charge Qgs Gate - Drain charge Qgd *3 Gate plateau voltage V(plateau) *3 Conditions Unit Min. Typ. Max. VDD 450V - 12 20 ID = 600mA - 3 - VGS = 10V - 5 - VDD 450V, ID = 600mA - 5 - nC V *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Pulsed www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 3/11 2012.08 - Rev.B Data Sheet ZDS020N60 lBody diode electrical characteristics (Source-Drain)(Ta = 25C) Values Parameter Inverse diode continuous, forward current Symbol Conditions IS *1 Unit Min. Typ. Max. - - 0.63 A - - 2.5 A - - 1.5 V Tc = 25C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *3 www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. VGS = 0V, IS = 1A 4/11 2012.08 - Rev.B Data Sheet ZDS020N60 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 10 Ta=25C Single Pulse 100 PW = 100us Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 1 PW = 1ms 0.1 Operation in this area is limited by RDS(on) 20 0 PW = 10ms 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [C] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta=25C 1 top D=1 D=0.5 D=0.1 D=0.05 D=0.01 bottom Signle 0.1 0.01 0.001 0.0001 Rth(ch-a)=62.5C/W Rth(ch-a)(t)=r(t)xRth(ch-a) Mounted on ceramic board (30mm x 30mm x 0.8mm) 0.01 1 100 Pulse Width : PW [s] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 5/11 2012.08 - Rev.B Data Sheet ZDS020N60 lElectrical characteristic curves Fig.5 Typical Output Characteristics(II) Fig.4 Typical Output Characteristics(I) 0.3 2 Ta=25C Pulsed Ta=25C Pulsed 0.25 VGS=6.0V 0.2 VGS=10.0V VGS=6.0V 1.5 Drain Current : ID [A] Drain Current : ID [A] VGS=10.0V VGS=5.0V 0.15 0.1 0.05 1 VGS=5.0V 0.5 VGS=4.0V VGS=4.0V 0 0 0 0.2 0.4 0.6 0.8 0 1 2 6 8 10 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.7 Typical Transfer Characteristics Fig.6 Breakdown Voltage vs. Channel Temperature 800 100 VDS= 10V VGS = 0V ID = 1mA 750 10 700 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] 4 650 600 550 500 1 0.1 Ta= 125C Ta= 75C Ta= 25C Ta= -25C 0.01 450 0.001 400 -50 0 50 100 0 150 Junction Temperature : Tj [C] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 6 7 8 Gate - Source Voltage : VGS [V] 6/11 2012.08 - Rev.B Data Sheet ZDS020N60 lElectrical characteristic curves Fig.8 Gate Threshold Voltage vs. Channel Temperature Fig.9 Transconductance vs. Drain Current 100 VDS= 10V VDS = 10V ID = 1mA 4.0 Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 5.0 3.0 2.0 1.0 0 25 50 75 1 100 125 150 Junction Temperature : Tj [C] Ta= -25C Ta=25C Ta=75C Ta=125C 0.1 0.01 0.01 0.0 -50 -25 10 0.1 1 10 100 Drain Current : ID [A] Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage Static Drain - Source On-State Resistance : RDS(on) [mW] 80 Ta=25C 70 60 ID = 0.3A 50 ID = 0.5A 40 30 20 10 0 0 2 4 6 8 10 Gate - Source Voltage : VGS [V] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 7/11 2012.08 - Rev.B Data Sheet ZDS020N60 lElectrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Junction Temperature 10 100 VGS= 1.0V Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 0 0.01 0.1 1 10 Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.11 Static Drain - Source On - State Resistance vs. Drain Current(II) Drain Current : ID [A] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. VGS = 10V ID = 2A 9 8 7 6 5 4 3 2 1 0 -50 0 50 100 150 Junction Temperature : Tj [C] 8/11 2012.08 - Rev.B Data Sheet ZDS020N60 lElectrical characteristic curves Fig.13 Typical Capacitance vs. Drain - Source Voltage Fig.14 Switching Characteristics 10000 10000 Capacitance : C [pF] 1000 Switching Time : t [ns] Ta = 25C f = 1MHz VGS = 0V Ciss 100 Coss 10 Ta = 25C VDD = 450V VGS = 10V RG = 10W 1000 tf td(off) 100 10 tr td(on) Crss 1 1 0.01 0.1 1 10 100 0.01 1000 0.1 Drain - Source Voltage : VDS [V] 10 Drain Current : ID [A] Fig.15 Dynamic Input Characteristics Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage 10 10 Inverse Diode Forward Current : IS [A] Gate - Source Voltage : VGS [V] 1 Ta = 25C VDD = 450V ID = 600mA RG = 10W 5 0 0 2 4 6 8 10 12 14 1 Ta=125C Ta=75C Ta=25C Ta= -25C 0.1 0.01 0.0 0.5 1.0 1.5 Source - Drain Voltage : VSD [V] Total Gate Charge : Qg [nC] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. VGS=0V 9/11 2012.08 - Rev.B Data Sheet ZDS020N60 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 10/11 2012.08 - Rev.B Data Sheet ZDS020N60 lDimensions (Unit : mm) e c L1 Lp E HE SOP8 b x A3 S A l1 D A1 A2 A b2 e A S e1 y s Patterm of terminal position areas DIM A A1 A2 A3 b c D E e HE L1 Lp x y DIM b2 e1 l1 MILIMETERS MIN MAX 1.75 0.15 1.40 1.60 0.25 0.30 0.50 0.10 0.30 4.80 5.20 3.75 4.05 1.27 5.70 6.30 0.50 0.70 0.65 0.85 0.15 0.10 MILIMETERS MIN MAX 0.65 5.15 1.15 INCHES MIN - MAX 0.069 0.006 0.055 0.063 0.01 0.012 0.004 0.189 0.148 0.02 0.012 0.205 0.159 0.05 0.224 0.02 0.026 0.248 0.028 0.033 0.006 0.004 INCHES MIN - MAX 0.026 0.203 - 0.045 Dimension in mm/inches www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 11/11 2012.08 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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