Voltage Regulators
1
Publication date: October 2002 SFF00004CEB
AN77Lxx/AN77LxxM Series
3-pin, positive output, low dropout voltage regulator (100 mA type)
■Overview
The AN77Lxx series and the AN77LxxM series are
stabilized constant voltage power supplies with a low in-
put/output voltage difference (0.22V typ. for AN77L03).
It is suitable for the low-voltage equipment using batter-
ies and consumer/industrial equipment with great fluc-
tuation of the supply voltage.
■Features
•Minimum input/output voltage difference:
0.22V typ. (3V type)
•Built-in overcurrent limit circuit
•Built-in rush current prevention circuit at input voltage
rise
•Built-in overheat protection circuit
•Built-in input short-circuit protection circuit
•Output voltage: 3V, 3.5V, 4V, 4.5V, 5V, 6V, 7V, 8V, 9V,
10V, 12V
SSIP003-P-0000
AN77Lxx series Unit: mm
HSIP003-P-0000B
AN77LxxM series Unit: mm
5.0±0.2
5.1±0.213.5±0.5
(1.0)(1.0)
4.0±0.2
2.3±0.2
0.6±0.15
0.43+0.1
–0.05
2.54
0.43+0.1
–0.05
213
2.6 typ.
1.6 max.
1.8 max.
4.6 max.
3.0
1.5 1.5
321
0.48 max. 0.58 max. 0.44 max.
4.25 max.
2.6 max.
0.8 min.
Note) The packages (SSIP003-P-0000 and HSIP003-
P-0000B) of this product will be changed to
lead-free type (SSIP003-P-0000S and
HSIP003-P-0000Q). See the new package di-
mensions section later of this datasheet.
1 : Input
2 : Output
3 : Common
1 : Output
2 : Common
3 : Input
AN77Lxx/AN77LxxM Series
2SFF00004CEB
■Block Diagram (AN77LxxM series)
−
+
Note) The number in ( ) shows the pin number for the AN77Lxx series.
Error Amp.
Starter
Voltage
Reference
Input Short Circuit
Protection
Over Current
Protection
Over Current
Protection
Rush Current
Protection
Thermal
Protection
32 1
IN
(1)
GND
(3)
OUT
(2)
Part No.
Output voltage (V
O
)Operation supply voltage range (V
I
)
AN77L03, AN77L03M
AN77L035, AN77L035M
AN77L04, AN77L04M
AN77L045, AN77L045M
AN77L05, AN77L05M
AN77L06, AN77L06M
AN77L07, AN77L07M
AN77L08, AN77L08M
AN77L09, AN77L09M
AN77L10, AN77L10M
AN77L12, AN77L12M
3
3.5
4
4.5
5
6
7
8
9
10
12
V
O
+0.3 to 13.62
V
O
+0.41 to 14.14
V
O
+0.3 to 14.66
V
O
+0.43 to 15.18
V
O
+0.3 to 15.7
V
O
+0.46 to 16.74
V
O
+0.48 to 17.78
V
O
+0.51 to 18.82
V
O
+0.53 to 19.86
V
O
+0.55 to 20.9
V
O
+0.6 to 22.98
V
V
V
V
V
V
V
V
V
V
V
Unit
■Absolute Maximum Ratings at Ta = 25°C
■Recommended Operating Range at Ta = 25°C
V
IN
I
IN
P
D
T
opr
T
stg
Supply voltage
Supply current
Power dissipation *
Operating ambient temperature
Storage temperature
V
mA
mW
°C
°C
Parameter Symbol Rating Unit
30
200
650
−30 to +85
−55 to +150
* HSIP003-P-0000B is mounted on a standard board (glass epoxy: 20mm × 20mm × t1.7mm with Cu foil of 1cm
2
or more).
AN77Lxx/AN77LxxM Series
3
SFF00004CEB
■Electrical Characteristics at Ta = 25°C
•AN77L03, AN77L03M (3V, 100mA type)
Output voltage
Line regulation
Load regulation
Bias current under no load
Bias current fluctuation to load
Bias current before regulation start
Ripple rejection ratio
Minimum input/output voltage difference 1
Minimum input/output voltage difference 2
Output noise voltage
Output voltage temperature coefficient
V
O
REG
IN
REG
L
I
Bias
∆I
Bias
I
rush
RR
V
DIF(min)1
V
DIF(min)2
V
no
∆V
O
/T
a
T
j
= 25°C
V
I
= 3.62 to 13.62V, T
j
= 25°C
I
O
= 0 to 100mA, T
j
= 25°C
I
O
= 0mA, T
j
= 25°C
I
O
= 0 to 100mA, T
j
= 25°C
V
I
= 2.7V, I
O
= 0mA, T
j
= 25°C
V
I
= 3.62 to 5.62V, f = 120Hz
V
I
= 2.7V, I
O
= 50mA, T
j
= 25°C
V
I
= 2.7V, I
O
= 100mA, T
j
= 25°C
f = 10Hz to 100kHz
T
j
= −30 to +125°C
2.88
60
3
2
8
0.9
3
1.5
70
0.12
0.22
70
0.2
3.12
60
60
1.5
5
5
0.25
0.3
V
mV
mV
mA
mA
mA
dB
V
V
µV
mV/°C
Parameter Symbol Conditions Min Typ Max Unit
Note 1) The specified condition T
j
= 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
= 4V, I
O
= 50mA and C
O
= 10µF
•AN77L035, AN77L035M (3.5V, 100mA type)
V
O
REG
IN
REG
L
I
Bias
∆I
Bias
I
rush
RR
V
DIF(min)1
V
DIF(min)2
V
no
∆V
O
/T
a
T
j
= 25°C
V
I
= 4.14 to 14.14V, T
j
= 25°C
I
O
= 0 to 100mA, T
j
= 25°C
I
O
= 0mA, T
j
= 25°C
I
O
= 0 to 100mA, T
j
= 25°C
V
I
= 3.15V, I
O
= 0mA, T
j
= 25°C
V
I
= 4.14 to 6.14V, f = 120Hz
V
I
= 3.15V, I
O
= 50mA, T
j
= 25°C
V
I
= 3.15V, I
O
= 100mA, T
j
= 25°C
f = 10Hz to 100kHz
T
j
= −30 to +125°C
3.36
59
3.5
3
9
0.9
3
1.5
69
0.12
0.22
75
0.23
3.64
60
60
1.5
5
5
0.25
0.41
V
mV
mV
mA
mA
mA
dB
V
V
µV
mV/°C
Output voltage
Line regulation
Load regulation
Bias current under no load
Bias current fluctuation to load
Bias current before regulation start
Ripple rejection ratio
Minimum input/output voltage difference 1
Minimum input/output voltage difference 2
Output noise voltage
Output voltage temperature coefficient
Parameter Symbol Conditions Min Typ Max Unit
Note 1) The specified condition T
j
= 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
= 4.5V, I
O
= 50mA and C
O
= 10µF
•AN77L04, AN77L04M (4V, 100mA type)
VO
REGIN
REGL
IBias
∆IBias
Irush
RR
VDIF(min)1
VDIF(min)2
Vno
∆VO/Ta
Tj = 25°C
VI = 4.66 to 14.66V, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
IO = 0mA, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
VI = 3.6V, IO = 0mA, Tj = 25°C
VI = 4.66 to 6.66V, f = 120Hz
VI = 3.6V, IO = 50mA, Tj = 25°C
VI = 3.6V, IO = 100mA, Tj = 25°C
f = 10Hz to 100kHz
Tj = −30 to +125°C
3.84
59
4
3
9
0.9
3
1.5
69
0.12
0.23
80
0.26
4.16
60
60
1.5
5
5
0.25
0.3
V
mV
mV
mA
mA
mA
dB
V
V
µV
mV/°C
Output voltage
Line regulation
Load regulation
Bias current under no load
Bias current fluctuation to load
Bias current before regulation start
Ripple rejection ratio
Minimum input/output voltage difference 1
Minimum input/output voltage difference 2
Output noise voltage
Output voltage temperature coefficient
Parameter Symbol Conditions Min Typ Max Unit
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 5V, IO = 50mA and CO = 10µF
AN77Lxx/AN77LxxM Series
4SFF00004CEB
■Electrical Characteristics at Ta = 25°C (continued)
•AN77L045, AN77L045M (4.5V, 100mA type)
•AN77L05, AN77L05M (5V, 100mA type)
•AN77L06, AN77L06M (6V, 100mA type)
VO
REGIN
REGL
IBias
∆IBias
Irush
RR
VDIF(min)1
VDIF(min)2
Vno
∆VO/Ta
Tj = 25°C
VI = 5.18 to 15.18V, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
IO = 0mA, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
VI = 4.05V, IO = 0mA, Tj = 25°C
VI = 7.18 to 6.18V, f = 120Hz
VI = 4.05V, IO = 50mA, Tj = 25°C
VI = 4.05V, IO = 100mA, Tj = 25°C
f = 10Hz to 100kHz
Tj = −30 to +125°C
4.32
58
4.5
3
10
0.9
3
1.5
68
0.12
0.23
85
0.3
4.68
60
60
1.5
5
5
0.25
0.43
V
mV
mV
mA
mA
mA
dB
V
V
µV
mV/°C
Output voltage
Line regulation
Load regulation
Bias current under no load
Bias current fluctuation to load
Bias current before regulation start
Ripple rejection ratio
Minimum input/output voltage difference 1
Minimum input/output voltage difference 2
Output noise voltage
Output voltage temperature coefficient
Parameter Symbol Conditions Min Typ Max Unit
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 5.5V, IO = 50mA and CO = 10µF
V
O
REG
IN
REG
L
I
Bias
∆I
Bias
I
rush
RR
V
DIF(min)1
V
DIF(min)2
V
no
∆V
O
/T
a
T
j
= 25°C
V
I
= 5.7 to 15.7V, T
j
= 25°C
I
O
= 0 to 100mA, T
j
= 25°C
I
O
= 0mA, T
j
= 25°C
I
O
= 0 to 100mA, T
j
= 25°C
V
I
= 4.5V, I
O
= 0mA, T
j
= 25°C
V
I
= 5.7 to 7.7V, f = 120Hz
V
I
= 4.5V, I
O
= 50mA, T
j
= 25°C
V
I
= 4.5V, I
O
= 100mA, T
j
= 25°C
f = 10Hz to 100kHz
T
j
= −30 to +125°C
4.8
58
5
4
10
0.9
3
1.5
68
0.12
0.24
90
0.33
5.2
60
60
1.5
5
5
0.25
0.3
V
mV
mV
mA
mA
mA
dB
V
V
µV
mV/°C
Output voltage
Line regulation
Load regulation
Bias current under no load
Bias current fluctuation to load
Bias current before regulation start
Ripple rejection ratio
Minimum input/output voltage difference 1
Minimum input/output voltage difference 2
Output noise voltage
Output voltage temperature coefficient
Parameter Symbol Conditions Min Typ Max Unit
Note 1) The specified condition T
j
= 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
= 6V, I
O
= 50mA and C
O
= 10µF
V
O
REG
IN
REG
L
I
Bias
∆I
Bias
I
rush
RR
V
DIF(min)1
V
DIF(min)2
V
no
∆V
O
/T
a
T
j
= 25°C
V
I
= 6.74 to 16.74V, T
j
= 25°C
I
O
= 0 to 100mA, T
j
= 25°C
I
O
= 0mA, T
j
= 25°C
I
O
= 0 to 100mA, T
j
= 25°C
V
I
= 5.4V, I
O
= 0mA, T
j
= 25°C
V
I
= 6.74 to 8.74V, f = 120Hz
V
I
= 5.4V, I
O
= 50mA, T
j
= 25°C
V
I
= 5.4V, I
O
= 100mA, T
j
= 25°C
f = 10Hz to 100kHz
T
j
= −30 to +125°C
5.76
56
6
4
11
0.9
3
1.5
66
0.12
0.25
105
0.4
6.24
60
60
1.5
5
5
0.25
0.46
V
mV
mV
mA
mA
mA
dB
V
V
µV
mV/°C
Output voltage
Line regulation
Load regulation
Bias current under no load
Bias current fluctuation to load
Bias current before regulation start
Ripple rejection ratio
Minimum input/output voltage difference 1
Minimum input/output voltage difference 2
Output noise voltage
Output voltage temperature coefficient
Parameter Symbol Conditions Min Typ Max Unit
Note 1) The specified condition T
j
= 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, V
I
= 7V, I
O
= 50mA and C
O
= 10µF
AN77Lxx/AN77LxxM Series
5
SFF00004CEB
■Electrical Characteristics at Ta = 25°C (continued)
•AN77L07, AN77L07M (7V, 100mA type)
•AN77L08, AN77L08M (8V, 100mA type)
•AN77L09, AN77L09M (9V, 100mA type)
VO
REGIN
REGL
IBias
∆IBias
Irush
RR
VDIF(min)1
VDIF(min)2
Vno
∆VO/Ta
Tj = 25°C
VI = 7.78 to 17.78V, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
IO = 0mA, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
VI = 6.3V, IO = 0mA, Tj = 25°C
VI = 7.78 to 9.78V, f = 120Hz
VI = 6.3V, IO = 50mA, Tj = 25°C
VI = 6.3V, IO = 100mA, Tj = 25°C
f = 10Hz to 100kHz
Tj = −30 to +125°C
6.72
55
7.0
5
11
1.1
3
1.5
65
0.12
0.26
120
0.46
7.28
70
70
1.6
5
5
0.25
0.48
V
mV
mV
mA
mA
mA
dB
V
V
µV
mV/°C
Output voltage
Line regulation
Load regulation
Bias current under no load
Bias current fluctuation to load
Bias current before regulation start
Ripple rejection ratio
Minimum input/output voltage difference 1
Minimum input/output voltage difference 2
Output noise voltage
Output voltage temperature coefficient
Parameter Symbol Conditions Min Typ Max Unit
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 8V, IO = 50mA and CO = 10µF
VO
REGIN
REGL
IBias
∆IBias
Irush
RR
VDIF(min)1
VDIF(min)2
Vno
∆VO/Ta
Tj = 25°C
VI = 8.82 to 18.82V, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
IO = 0mA, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
VI = 7.2V, IO = 0mA, Tj = 25°C
VI = 8.82 to 10.82V, f = 120Hz
VI = 7.2V, IO = 50mA, Tj = 25°C
VI = 7.2V, IO = 100mA, Tj = 25°C
f = 10Hz to 100kHz
Tj = −30 to +125°C
7.68
53
8
5
12
1.1
3
1.5
63
0.12
0.27
135
0.53
8.32
80
80
1.6
5
5
0.25
0.51
V
mV
mV
mA
mA
mA
dB
V
V
µV
mV/°C
Output voltage
Line regulation
Load regulation
Bias current under no load
Bias current fluctuation to load
Bias current before regulation start
Ripple rejection ratio
Minimum input/output voltage difference 1
Minimum input/output voltage difference 2
Output noise voltage
Output voltage temperature coefficient
Parameter Symbol Conditions Min Typ Max Unit
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 9V, IO = 50mA and CO = 10µF
VO
REGIN
REGL
IBias
∆IBias
Irush
RR
VDIF(min)1
VDIF(min)2
Vno
∆VO/Ta
Tj = 25°C
VI = 9.86 to 19.86V, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
IO = 0mA, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
VI = 8.1V, IO = 0mA, Tj = 25°C
VI = 9.86 to 11.86V, f = 120Hz
VI = 8.1V, IO = 50mA, Tj = 25°C
VI = 8.1V, IO = 100mA, Tj = 25°C
f = 10Hz to 100kHz
Tj = −30 to +125°C
8.64
52
9
6
13
1.2
3
1.5
62
0.13
0.28
150
0.6
9.36
90
90
1.7
5
5
0.25
0.53
V
mV
mV
mA
mA
mA
dB
V
V
µV
mV/°C
Output voltage
Line regulation
Load regulation
Bias current under no load
Bias current fluctuation to load
Bias current before regulation start
Ripple rejection ratio
Minimum input/output voltage difference 1
Minimum input/output voltage difference 2
Output noise voltage
Output voltage temperature coefficient
Parameter Symbol Conditions Min Typ Max Unit
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 10V, IO = 50mA and CO = 10µF
AN77Lxx/AN77LxxM Series
6SFF00004CEB
■Electrical Characteristics at Ta = 25°C (continued)
•AN77L10, AN77L10M (10V, 100mA type)
•AN77L12, AN77L12M (12V, 100mA type)
VO
REGIN
REGL
IBias
∆IBias
Irush
RR
VDIF(min)1
VDIF(min)2
Vno
∆VO/Ta
Tj = 25°C
VI = 10.9 to 20.9V, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
IO = 0mA, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
VI = 9.0V, IO = 0mA, Tj = 25°C
VI = 10.9 to 12.9V, f = 120Hz
VI = 9.0V, IO = 50mA, Tj = 25°C
VI = 9.0V, IO = 100mA, Tj = 25°C
f = 10Hz to 100kHz
Tj = −30 to +125°C
9.6
50
10
7
14
1.2
3
1.5
60
0.13
0.29
165
0.67
10.4
100
100
1.7
5
5
0.25
0.55
V
mV
mV
mA
mA
mA
dB
V
V
µV
mV/°C
Output voltage
Line regulation
Load regulation
Bias current under no load
Bias current fluctuation to load
Bias current before regulation start
Ripple rejection ratio
Minimum input/output voltage difference 1
Minimum input/output voltage difference 2
Output noise voltage
Output voltage temperature coefficient
Parameter Symbol Conditions Min Typ Max Unit
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 11V, IO = 50mA and CO = 10µF
VO
REGIN
REGL
IBias
∆IBias
Irush
RR
VDIF(min)1
VDIF(min)2
Vno
∆VO/Ta
Tj = 25°C
VI = 12.98 to 22.98V, Tj = 25°C
IO = 0 to 100mA, Tj = 25°Cv
IO = 0mA, Tj = 25°C
IO = 0 to 100mA, Tj = 25°C
VI = 10.8V, IO = 0mA, Tj = 25°C
VI = 12.98 to 14.98V, f = 120Hz
VI = 10.8V, IO = 50mA, Tj = 25°C
VI = 10.8V, IO = 100mA, Tj = 25°C
f = 10Hz to 100kHz
Tj = −30 to +125°C
11.52
48
12
8
15
1.4
3
1.5
58
0.13
0.31
190
0.8
12.48
120
120
1.9
5
5
0.25
0.6
V
mV
mV
mA
mA
mA
dB
V
V
µV
mV/°C
Output voltage
Line regulation
Load regulation
Bias current under no load
Bias current fluctuation to load
Bias current before regulation start
Ripple rejection ratio
Minimum input/output voltage difference 1
Minimum input/output voltage difference 2
Output noise voltage
Output voltage temperature coefficient
Parameter Symbol Conditions Min Typ Max Unit
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 13V, IO = 50mA and CO = 10µF
AN77Lxx/AN77LxxM Series
7
SFF00004CEB
■Main Characteristics
01
Input voltage V
I
(V)
Input/output characteristic
V
O
V
I
1
2
3
4
5
05234
AN77L03/M
I
O
= 50mA
0
Input voltage V
I
(V)
Line regulation
V
O
V
I
2.98
2.99
3.00
3.01
3.02
03010 20
AN77L03/M
I
O
= 50mA
Output voltage V
O
(V)
Output voltage V
O
(V)
01
Input voltage V
I
(V)
Rush current (under no load)
I
I
V
I
1
2
3
05234
Input current I
I
(mA)
AN77L03/M
I
O
= 0A
0
Output current I
O
(mA)
Bias current
I
Bias
I
O
1
2
3
4
5
1 10050
AN77L03/M
V
I
= 4V
Bias current I
Bias
(mA)
0
Load regulation
VO IO
2.98
2.99
3.00
3.01
3.02
0 10050
AN77L03/M
V
I
= 4V
Output voltage V
O
(V)
0
Output current I
O
(mA)
Overcurrent limit characteristic
V
O
I
O
1
2
3
4
5
0 300100 200
Output voltage V
O
(V)
AN77L03/M
V
I
= 4V
I
O
(short) = 200mA
(typ.)
0
Output current I
O
(mA)
Minimum input/output voltage difference
V
DIF(min)
I
OUT
0.1
0.2
0.3
0.4
0.5
0 10050
Minimum input/output voltage difference V
DIF(min)
(V)
AN77L03/M
V
I
= 2.88V
Output current I
O
(mA)
0100
Ripple rejection ratio
RR f
20
40
60
80
100
10 100k1k 10k
AN77L03/M
I
O
= 50mA
Ripple rejection ratio RR ( dB)
Frequency f (Hz)
2.90
Ambient temperature T
a
(°C)
Output voltage temperature characteristic
V
O
T
a
3.00
3.10
−25 50
Output voltage V
O
(V)
AN77L03/M
V
I
= 4V
I
O
= 0mA
025 75
AN77Lxx/AN77LxxM Series
8SFF00004CEB
■Main Characteristics (continued)
0
Ambient temperature Ta (°C)
0.5
1.0
07525 50
Power dissipation PD (W)
100 125 15085
Independent IC
without a heat sink
Rth(j-a) = 190°C/W
PD = 658mW (25°C)
0
Ambient temperature Ta (°C)
0.5
1.0
07525 50
Power dissipation PD (W)
100 125 15085
Power dissipation
P
D
T
a
(AN77Lxx series)
Power dissipation
P
D
T
a
(AN77LxxM series)
Mounted on standard board
(glass epoxy: 20 mm × 20 mm × t1.7mm
with Cu foil of 1cm2or more)
■Usage Notes
1. Input short-circuit protection circuit
For the conventional Matsushita 3-pin regulators (such as of
the AN80xx series), when DC input pin (pin 3) is short-cir-
cuited with GND pin (pin 2) in the normal operation condition,
the potential of output pin (pin 1) becomes higher than that of
DC input pin and the electric charges which is charged in out-
put capacitor CO flows in the input side, having resulted in the
breakage of elements.
In the above case, the common silicon diode is connected
as shown in the right figure (the dotted line). However, for the
AN77Lxx/AN77LxxM series, since the protection circuit, which
protects the elements from the discharging current, is incorpo-
rated in the internal circuit, the protection diode is not required.
2. Short-circuit between the output pin and the GND pin
Because there is no in-built protection circuit in the AN77Lxx/
AN77LxxM series, they have the drooping characteristics as
shown in the "■ Main Characteristics, Overcurrent limit char-
acteristics". When your use under a high voltage happens to
cause any short-circuit between the output pin (pin 1) and the
GND pin (pin 2), the IC is likely to be broken.
3. Capacitor for external compensation
In order to secure the stability, the capacitor of 10µF is
required in the output side and it should be added as near to
output pin (pin 1) and GND pin (pin 2) as possible. When it is
used under low temperature, oscillation may occur due to the
decrease of the aluminum electrolytic capacitor's capacitance
and an increase of ESR.
For the AN77Lxx/AN77LxxM series, it is recommended that
the tantalum capacitor or aluminum electrolytic capacitor whose
equivalent serial resistance with temperature characteristics within
the recommended range specified in the right figure should be used.
(1) 3 1
2
(3)
(2)
−
+
CI
0.33µF
VIVO
CO
10µF
Not required
50
40
30
20
10
020 40 60 80 100
Output current I
O
(mA)
Equivalent series resistance ESR (Ω)
;;
;;;;
;;;
Recommended range
(AN77LxxM series)
Note) The number in ( ) shows the pin number for the
AN77Lxx series.
AN77Lxx/AN77LxxM Series
9
SFF00004CEB
■Application Circuit Example
•For the AN77Lxx/AN77LxxM series, the gain inside the IC is set high to improve the performance. For the reason,
use the capacitor of 10µF or more when the power line in the output side is long.
In addition, install the capacitor in the output side as near as possible to the IC.
AN77Lxx/
AN77LxxM
series
−
+
VIVO
0.33µF10µF
■New Package Dimensions (Unit: mm)
•SSIP003-P-0000S (Lead-free package)
•HSIP003-P-0000Q (Lead-free package)
(1.00) (1.00)
31
5.00±0.20
4.00±0.20
2.30±0.20
0.60±0.15
0.40±0.10
5.00±0.20
13.30±0.50
0.40+0.10
-
0.05
1.27 1.27
31
0.42+0.10
-
0.05
1.00+0.10
-
0.20
0.40+0.10
-
0.05
4.00+0.25
-
0.20
2.50±0.10
4.50±0.10
1.55±0.20
2.65±0.10
(0.40) 1.50±0.10
(0.75)
3.00
1.50
M
0.15
0.10
0.50+0.10
-
0.05
0.40+0.10
-
0.05
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
