Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-emitter class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi-carrier base station RF power amplifiers. ARCHIVE INFORMATION * Specified 26 Volts, 2.0 GHz, Class AB, Two-Tones Characteristics Output Power -- 30 Watts (PEP) Power Gain -- 9.8 dB Efficiency -- 34% Intermodulation Distortion -- -28 dBc * Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power -- 30 Watts Power Gain -- 11 dB Efficiency -- 40% Intermodulation Distortion -- -30 dBc CASE 395C-01, STYLE 1 * Excellent Thermal Stability * Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Power * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Designed for FM, TDMA, CDMA, and Multi-Carrier Applications Note: Not suitable for class A operation. MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 25 Vdc Collector-Emitter Voltage VCES 60 Vdc Collector-Base Voltage VCBO 60 Vdc Collector-Emitter Voltage (RBE = 100 ) VCER 30 Vdc VEB -3 Vdc Emitter-Base Voltage Collector Current - Continuous IC 4 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 125 0.71 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 1.4 C/W THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case (1) (1) Thermal resistance is determined under specified RF operating condition. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) V(BR)CEO 25 28 -- Vdc Collector-Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 60 70 -- Vdc Collector-Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 60 70 -- Vdc Characteristic OFF CHARACTERISTICS REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 1999 (Replaces MRF20030/D) MRF20030R 1 ARCHIVE INFORMATION 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)EBO 3 3.8 -- Vdc ICES -- -- 10 mAdc hFE 20 40 80 -- Cob -- 28 -- pF Gpe 9.8 11 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) 34 38 -- % Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD -- - 30 - 28 dBc Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 10 17 -- dB Characteristic OFF CHARACTERISTICS Emitter-Base Breakdown Voltage (IB = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (VCE = 5 Vdc, ICE = 1 Adc) ARCHIVE INFORMATION Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Load Mismatch (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) No Degradation in Output Power Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gpe -- 11 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) -- 34 -- % Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD -- - 32 -- dBc Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL -- 14 -- dB Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz) Gpe -- 10.5 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) -- 40 -- % Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) IRL -- 14 -- dB GUARANTEED BUT NOT TESTED (In Motorola Test Fixture) Output Mismatch Stress (VCC = 25 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) Typically No Degradation in Output Power (1) For Information Only. This Part Is Collector Matched. MRF20030R 2 MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION DYNAMIC CHARACTERISTICS B1, B2 C1, C13 C2 C3, C5, C12 C4, C11 C6, C8 C7, C9 C10 C14 D1 L1, L4 L2, L3 Ferrite Bead, P/N 5659065/3B, Ferroxcube 0.1 F, Chip Capacitor, Kermet 100 F, 50 V, Electrolytic Capacitor, Mallory 0.6-4 pF, Variable Capacitor, Johanson, Gigatrim 10 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 75 pF, B Case Chip Capacitor, ATC 0.4-2.5 pF, Variable Capacitor, Johanson, Gigatrim 470 F, 63 V, Electrolytic Capacitor, Mallory Diode, Motorola (MUR3160T3) 12 Turns, 22 AWG, IDIA. 0.195 0.750 20 AWG N1, N2 R1, R2 R3, R4 R5, R8 R6, R7 Q1 Q2 Board Type N Flange Mount RF Connector MA/COM 3052-1648-10 130 , 1/8 W Chip Resistor, Rohm 100 , 1/8 W Chip Resistor, Rohm 10 , 1/2 W Resistor 10 , 1/8 W Chip Resistor, Rohm (10J) Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) 30 Mil Glass Teflon, Arlon GX-0300-55-22, r = 2.55 Figure 1. Class AB Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF20030R 3 ARCHIVE INFORMATION ARCHIVE INFORMATION 4 &' 6 4 6 $5 6 7" * 6 ,-. )&'89 /' &' ! # ")% 4 6 $5 6 7" 4 23 :$ :$: 23 1; :$: 23 1; :$: 2 4 6 $5 6 7" * 6 4 ,-. * 6 4 ,-. 23 2 4 2 2 /01 6 #!% 6 7" * 6 4 ,-. * 6 4 ,-. 4 23 !"#$% 23 7" 6 $5 * 6 4 ,-. * 6 4 ,-. 7" 23 23 4 7" 4 4 2 ! )+ "! #$5% 7" 6 $5 * 6 4 ,-. * 6 4 ,-. 4 7" 4 4 /01 ! # ")% ! /01 ! # ")% ! Figure 6. Intermodulation Distortion versus Output Power Figure 7. Power Gain versus Output Power MRF20030R 4 2 7" 2 6 7" 6 7" 23 23 , Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage 23 23 2 4 /01 ! # ")% ! 2 Figure 4. Intermodulation Distortion versus Output Power , !, " )#$5% 4 23 23 * !!+ #,-.% Figure 3. Output Power versus Frequency "#$% , !, " )#$5% Figure 2. Output Power & Power Gain versus Input Power MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION 4 , !, " )#$5% 4 4 ARCHIVE INFORMATION /01 /01 !# ")% "#$% /01 !# ")% TYPICAL CHARACTERISTICS 4 ) * !!+ #,-.% 4= 4 = ARCHIVE INFORMATION Figure 8. Performance in Broadband Circuit 4! ,"#-)?",)% ARCHIVE INFORMATION !!!+#<% "#$% 4 /01 6 #!% 6 $5 6 7" ) 4! 4! 4! 4! 4! 4! 4! 4! > > !,!"! #% ;&@ AB/C 8:A; $&@9AD@ 5A9509A1$ , &' ;/0:@ ? A7: 7&11: 50::'14 &* 1@1@ A1 9CA1$ 17:A10:@ ;AC 5/::9A1$ 1/ B11: 1;A' < /* 1; 1;/:1&5A9 :$&51&/' */: 71A9 *A&90:4 &C&$ , *A51/: BD */: , &' A A:1&509A: A9&5A1&/'4 Figure 9. MTBF Factor versus Junction Temperature MOTOROLA RF DEVICE DATA MRF20030R 5 EF EF4 EF * 6 4 -. 4 -. &' 4 -. -. ARCHIVE INFORMATION EF 4 -. * 6 4 -. G 4 -. 4 -. 4 EF 4 -. 4 2EF 2EF 2EF4 2EF 2EF 2EF4 2EF 6 6 7" /01 6 #!% f MHz Zin(1) ZOL* 1800 4.5 + j7.0 4.7 + j2.4 1850 4.5 + j6.0 4.4 + j1.6 1900 4.5 + j4.6 3.4 + j1.2 1950 3.7 + j2.4 3.3 + j1.6 2000 3.5 + j1.5 3.5 + j2.0 Zin(1) = Conjugate of fixture base impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 10. Series Equivalent Input and Output Impedence MRF20030R 6 MOTOROLA RF DEVICE DATA ARCHIVE INFORMATION EF4 4 EF / 6 Table 1. Common Emitter S-Parameters at VCE = 24 Vdc, IC = 1.8 Adc S11 S21 S12 S22 |S11| f |S21| f |S12| f |S22| f 1.5 .964 158 .65 74 .046 60 .859 161 1.55 .960 156 .74 68 .047 56 .841 161 1.6 .952 155 .87 60 .049 53 .815 160 1.65 .933 153 1.05 50 .048 46 .787 161 1.7 .892 149 1.32 35 .047 40 .744 163 1.75 .804 149 1.64 13 .040 29 .719 168 1.8 .727 157 1.78 -18 .026 21 .778 175 1.85 .787 163 1.50 -50 .015 54 .883 174 1.9 .873 163 1.14 -73 .020 81 .937 171 1.95 .921 160 .84 -89 .026 88 .949 168 2 .941 157 .62 -102 .031 93 .950 165 2.05 .943 155 .48 -109 .036 93 .946 164 2.1 .940 153 .38 -118 .040 92 .942 163 2.15 .928 151 .30 -127 .042 97 .939 162 2.2 .917 150 .24 -133 .049 99 .935 161 2.25 .907 150 .20 -140 .056 101 .933 160 2.3 .888 148 .17 -150 .066 100 .926 159 2.35 .861 148 .14 -159 .077 98 .916 157 2.4 .853 149 .11 -167 .087 92 .909 157 2.45 .860 146 .10 -176 .095 89 .900 155 2.5 .880 146 .10 156 .119 84 .880 155 MOTOROLA RF DEVICE DATA MRF20030R 7 ARCHIVE INFORMATION ARCHIVE INFORMATION f GHz PACKAGE DIMENSIONS -A- U Q 2 PL 4 #4% 1 , " , !)= 4 ,!) " !" ! ") + 4, 4 4 ,!)= -4 DIM A B C D E H J K N Q U -B- 3 K 2 D N , INCHES MIN MAX 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4) MILLIMETERS MIN MAX 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4) )+! = 4 ")! 4 ! 4 !,! E J C H -T- SEATING PLANE CASE 395C-01 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 Customer Focus Center: 1-800-521-6274 Mfax: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ MRF20030R 8 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26629298 MOTOROLA RF DEVICE DATA MRF20030R/D