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MRF20030RMOTOROLA RF DEVICE DATA
The RF Sub–Micron Bipolar Line
Designed for broadband commercial and industrial applications at frequen-
cies from 1800 to 2000 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common–emitter class AB amplifier
applications. Suitable for frequency modulated, amplitude modulated and
multi–carrier base station RF power amplifiers.
•Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
Output Power — 30 Watts (PEP)
Power Gain — 9.8 dB
Efficiency — 34%
Intermodulation Distortion — –28 dBc
•Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics
Output Power — 30 Watts
Power Gain — 11 dB
Efficiency — 40%
Intermodulation Distortion — –30 dBc
•Excellent Thermal Stability
•Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP)
Output Power
•Characterized with Series Equivalent Large–Signal Impedance Parameters
•S–Parameter Characterization at High Bias Levels
•Designed for FM, TDMA, CDMA, and Multi–Carrier Applications
Note: Not suitable for class A operation.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 25 Vdc
Collector–Emitter Voltage VCES 60 Vdc
Collector–Base Voltage VCBO 60 Vdc
Collector–Emitter Voltage (RBE = 100 Ω) VCER 30 Vdc
Emitter–Base Voltage VEB –3 Vdc
Collector Current – Continuous IC4 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD125
0.71
Watts
W/°C
Storage Temperature Range Tstg – 65 to +150 °C
Operating Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Thermal Resistance, Junction to Case (1) RθJC 1.4 °C/W
(1) Thermal resistance is determined under specified RF operating condition.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO 25 28 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES 60 70 — Vdc
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V(BR)CBO 60 70 — Vdc
Order this document
by MRF20030R/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 2.0 GHz
NPN SILICON
BROADBAND
RF POWER TRANSISTOR
CASE 395C–01, STYLE 1
Motorola, Inc. 1999
(Replaces MRF20030/D)
REV 1
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MRF20030R
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Emitter–Base Breakdown Voltage
(IB = 5 mAdc, IC = 0)
V(BR)EBO 3 3.8 — Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ICES — — 10 mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 5 Vdc, ICE = 1 Adc)
hFE 20 40 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)
Cob — 28 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 30 Watts, ICQ = 120 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gpe 9.8 11 — dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η34 38 — %
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD — –30 –28 dBc
Input Return Loss
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL 10 17 — dB
Load Mismatch
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
ψNo Degradation in Output Power
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gpe —11 — dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η— 34 — %
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD — –32 — dBc
Input Return Loss
(VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL — 14 — dB
GUARANTEED BUT NOT TESTED (In Motorola Test Fixture)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz)
Gpe — 10.5 — dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz)
η— 40 — %
Input Return Loss
(VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz)
IRL — 14 — dB
Output Mismatch Stress
(VCC = 25 Vdc, Pout = 30 Watts, ICQ = 125 mA,
f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test)
ψTypically No Degradation in Output Power
(1) For Information Only. This Part Is Collector Matched.
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MRF20030RMOTOROLA RF DEVICE DATA
Figure 1. Class AB Test Fixture Electrical Schematic
B1, B2 Ferrite Bead, P/N 5659065/3B, Ferroxcube
C1, C13 0.1 µF, Chip Capacitor, Kermet
C2 100 µF, 50 V, Electrolytic Capacitor, Mallory
C3, C5, C12 0.6–4 pF, Variable Capacitor, Johanson, Gigatrim
C4, C11 10 pF, B Case Chip Capacitor, ATC
C6, C8 24 pF, B Case Chip Capacitor, ATC
C7, C9 75 pF, B Case Chip Capacitor, ATC
C10 0.4–2.5 pF, Variable Capacitor, Johanson, Gigatrim
C14 470 µF, 63 V, Electrolytic Capacitor, Mallory
D1 Diode, Motorola (MUR3160T3)
L1, L4 12 Turns, 22 AWG, IDIA. 0.195″
L2, L3 0.750″ 20 AWG
N1, N2 Type N Flange Mount RF Connector
MA/COM 3052–1648–10
R1, R2 130 Ω, 1/8 W Chip Resistor, Rohm
R3, R4 100 Ω, 1/8 W Chip Resistor, Rohm
R5, R8 10 Ω, 1/2 W Resistor
R6, R7 10 Ω, 1/8 W Chip Resistor, Rohm (10J)
Q1 Transistor, PNP Motorola (BD136)
Q2 Transistor, NPN Motorola (MJD47)
Board 30 Mil Glass Teflon, Arlon GX–0300–55–22,
εr = 2.55
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MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 2. Output Power & Power Gain
versus Input Power
Figure 3. Output Power versus Frequency
Figure 4. Intermodulation Distortion
versus Output Power
Figure 5. Power Gain and Intermodulation
Distortion versus Supply Voltage
Figure 6. Intermodulation Distortion
versus Output Power
Figure 7. Power Gain versus Output Power
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MRF20030RMOTOROLA RF DEVICE DATA
Figure 8. Performance in Broadband Circuit
η
Figure 9. MTBF Factor versus
Junction Temperature
°
±
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MOTOROLA RF DEVICE DATA
Figure 10. Series Equivalent Input and Output Impedence
f
MHz
Zin(1)
Ω
ZOL*
Ω
1800
1850
1900
1950
4.5 + j7.0
4.5 + j4.6
4.5 + j6.0
3.7 + j2.4
4.7 + j2.4
4.4 + j1.6
3.4 + j1.2
3.3 + j1.6
Zin(1) = Conjugate of fixture base impedance.
ZOL* = Conjugate of the optimum load impedance at
given output power, voltage, bias current and
frequency.
Ω
2000 3.5 + j1.5 3.5 + j2.0
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MRF20030RMOTOROLA RF DEVICE DATA
Table 1. Common Emitter S–Parameters at VCE = 24 Vdc, IC = 1.8 Adc
fS11 S21 S12 S22
GHz |S11|∠ f|S21|∠ f|S12|∠ f|S22|∠ f
1.5 .964 158 .65 74 .046 60 .859 161
1.55 .960 156 .74 68 .047 56 .841 161
1.6 .952 155 .87 60 .049 53 .815 160
1.65 .933 153 1.05 50 .048 46 .787 161
1.7 .892 149 1.32 35 .047 40 .744 163
1.75 .804 149 1.64 13 .040 29 .719 168
1.8 .727 157 1.78 –18 .026 21 .778 175
1.85 .787 163 1.50 –50 .015 54 .883 174
1.9 .873 163 1.14 –73 .020 81 .937 171
1.95 .921 160 .84 –89 .026 88 .949 168
2 .941 157 .62 –102 .031 93 .950 165
2.05 .943 155 .48 –109 .036 93 .946 164
2.1 .940 153 .38 –118 .040 92 .942 163
2.15 .928 151 .30 –127 .042 97 .939 162
2.2 .917 150 .24 –133 .049 99 .935 161
2.25 .907 150 .20 –140 .056 101 .933 160
2.3 .888 148 .17 –150 .066 100 .926 159
2.35 .861 148 .14 –159 .077 98 .916 157
2.4 .853 149 .11 –167 .087 92 .909 157
2.45 .860 146 .10 –176 .095 89 .900 155
2.5 .880 146 .10 156 .119 84 .880 155
MRF20030R
8
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 395C–01
ISSUE A
U
D
K
N
J
H
E
C
DIM
A
MIN MAX MIN MAX
MILLIMETERS
INCHES
B
C
D
E
H
J
K
N
Q
U
SEATING
PLANE
–T–
1
2
3
–A–
–B–
2 PLQ
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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MRF20030R/D
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