2012. 3. 29 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS193
SILICON EPITAXIAL PLANAR DIODE
Revision No : 2
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
·Small Package : SOT-23.
·Low Forward Voltag : VF=0.9V(Typ.).
·Fast Reverse Recovery Time : trr=1.6ns(Typ.).
·Small Total Capacitance : CT=0.9pF(Typ.).
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
1. NC
2. ANODE
3. CATHODE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
21
3
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Type Name
Marking
Lot No.
F 3
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
VF(1) IF=1mA - 0.60 -
V
VF(2) IF=10mA - 0.72 -
VF(3) IF=100mA - 0.90 1.20
Reverse Current IRVR=80V - - 0.5 μA
Total Capacitance CTVR=0, f=1MHz - 0.9 3.0 pF
Reverse Recovery Time trr IF=10mA - 1.6 4.0 ns
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR80 V
Maximum (Peak) Forward Current IFM 300 mA
Average Forward Current IO100 mA
Surge Current (10ms) IFSM 2 A
Power Dissipation PD150 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
2012. 3. 29 2/2
KDS193
Revision No : 2
10.1
REVERSE VOLTAGE V (V)
R
RT
C - V
REVERSE CURRENT I (µA)
R
10
0
REVERSE VOLTAGE V (V)
R
TOTAL CAPACITANCE C (pF)
0
I - VI - V
F
FORWARD VOLTAGE V (V)
0
F
10
FORWARD CURRENT I (mA)
FF
0.2 0.4 0.6 0.8 1.0 1.2
-2
-1
10
2
10
3
10
10
1
Ta=100 C
Ta=25 C
Ta=-25 C
RR
20 40 60 80
-3
-2
10
-1
10
1
10
Ta=100 C
Ta=75 C
Ta=50 C
Ta=25 C
T
0.4
0.8
1.2
1.6
2.0
3 10 30 100
f=1MHz
Ta=25 C
t - I
F
FORWARD CURRENT I (mA)
0.1
0.5
rr
REVERSE RECOVERY TIME t (ns)
rr F
0.3 1 3 10 30 100
1
3
5
10
30
50
100
Ta=25 C
Fig. 1
0.3
Fig. 1. REVERSE RECOVERY TIME(t ) TEST CIRCUIT
rr
50Ω
2kΩ
E
50Ω
INPUT
WAVEFORM INPUT 0.01µFDUT
OUTPUT
SAMPLING
OSCILLOSCOPE
(R =50Ω)
IN
WAVEFORM
0.1 IR
0
IR
F
I =10mA
rr
t
PULSE GENERATOR
(R =50Ω)
OUT
50ns
-6V
0
