REVISIONS PART NO. 2N6292 ECN # REV DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE - 1.0 RELEASED AB 08/05/12 ER 08/05/12 ER 08/05/12 Absolute Maximum Ratings Pin Configuration 1. Emitter 2. Base 3. Collector Electrical Characteristics : (Ta = + 25C unless otherwise Specified) Parameter Symbol Test Conditions V(br)ceo Ic = 100mA, Ib = 0 Icex Vce = 80V, Veb(off) = 1.5V Min. Typ. Max. Unit 70 - - V Collector Cut-Off Current - - 100 Emitter Cut-Off Current 70V Collector-Emitter Voltage, Vceo 80V Emitter-Base Voltage, Vebo 5V Continuous Collector Current, Ic 7A Base Current, Ib 3A Total Device Dissipation (T C = +25C), Pd 40W Derate above 25C 40mW / C Operating Junction Temperature Range, Tj -65C to +150C Storage Temperature Range, Tstg -65C to +150C Dimensions Min. Max. A 14.42 16.51 A B 9.63 10.67 3.56 4.83 0.9 OFF Characteristics Collector-Emitter Breakdown Voltage (Note 1) Collector-Base Voltage, Vcbo Iceo Vcb = 60V, Ib = 0 - - 1 mA C Iebo Veb = 5V, Ic = 0 - - 1 mA D -- E 1.15 1.4 Vce = 4V, Ic = 2A 30 - 150 - F 3.75 3.88 Vce = 4V, Ic = 7A 2.3 - - - G 2.29 2.79 ON Characteristics DC Current Gain (Note 1) hfe Collector-Emitter Saturation Voltage (Note 1) Vce(sat) Ic = 7A, Ib = 3A - - 3.5 V H 2.54 3.43 Base-Emitter On Voltage (Note 1) Vbe(on) Ic = 7A, Vce = 4V - - 3 V J -- 0.56 K 12.7 14.73 Current Gain-Bandwidth Product (Note 2) ft Vce = 4V, Ic = 500mA, f = 1MHz 4 - - MHz L 2.8 4.07 Output Capacitance Cobo Vcb = 10V, Ie = 0, f = 1MHz - - 250 pF M 2.03 2.92 Small-Signal Current Gain hfe Vce = 4V, Ic = .5A, f = 50kHz 20 - - - N -- 31.24 Small-Signal Characteristics Note 1: Pulse test : Pulse width </= 300s, duty cycle </= 2% Note 2: f is defined as the frequency at which h extrapolates to unity. Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not o perate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. O TOLERANCES: DRAWN BY: AB UNLESS OTHERWISE SPECIFIED, DIMENSIONS ARE FOR REFERENCE PURPOSES ONLY. CHECKED BY: ER APPROVED BY: ER DATE: 08/05/12 Part Number Silicon T0-220 Plastic NPN Power Transistor 2N6292 www.element14.com www.farnell.com www.newark.com DEF 7 Silicon T0220 Plastic NPN Power Transistor SIZE 08/05/12 A4 08/05/12 Description DRAWING TITLE: DATE: DATE: Part Number Table DWG NO. SCALE: NTS ELECTRONIC FILE REV 2N6292-1 1.0 2N6292-01 U.O.M.: mm SHEET: 1 of 1