PART NO. REVISIONS
ECN # REV DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE
- 1.0 RELEASED AB 08/05/12 ER 08/05/12 ER 08/05/12
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NTS
A4 1.0
1 of 1
mm
2N6292
Silicon T0220 Plastic NPN Power Transistor
2N6292-1
2N6292-01
Pin Conguration
1. Emitter
2. Base
3. Collector
Part Number Table
Description Part Number
Silicon T0-220
Plastic NPN Power
Transistor
2N6292
Collector-Base Voltage, Vcbo 70V
Collector-Emitter Voltage, Vceo 80V
Emitter-Base Voltage, Vebo 5V
Continuous Collector Current, Ic7A
Base Current, Ib3A
Total Device Dissipation (T C = +25°C), Pd40W
Derate above 25°C 40mW / °C
Operating Junction Temperature Range, Tj-65°C to +150°C
Storage Temperature Range, Tstg -65°C to +150°C
Absolute Maximum Ratings
Dimensions Min. Max.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D — 0.9
E 1.15 1.4
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J — 0.56
K 12.7 14.73
L 2.8 4.07
M 2.03 2.92
N — 31.24
O DEF 7
Note 1: Pulse test : Pulse width </= 300µs, duty cycle </= 2%
Note 2: f is dened as the frequency at which h extrapolates to unity.
Electrical Characteristics : (Ta = + 25°C unless otherwise Specied)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage (Note 1) V(br)ceo Ic = 100mA, Ib = 0 70 - - V
Collector Cut-Off Current Icex Vce = 80V, Veb(off) = 1.5V - - 100 μA
Iceo Vcb = 60V, Ib = 0 - - 1 mA
Emitter Cut-Off Current Iebo Veb = 5V, Ic = 0 - - 1 mA
ON Characteristics
DC Current Gain (Note 1) hfe
Vce = 4V, Ic = 2A 30 - 150 -
Vce = 4V, Ic = 7A 2.3 - - -
Collector-Emitter Saturation Voltage (Note 1) Vce(sat)Ic = 7A, Ib = 3A - - 3.5 V
Base-Emitter On Voltage (Note 1) Vbe(on)Ic = 7A, Vce = 4V - - 3 V
Small-Signal Characteristics
Current Gain-Bandwidth Product (Note 2) ftVce = 4V, Ic = 500mA, f = 1MHz 4 - - MHz
Output Capacitance Cobo Vcb = 10V, Ie = 0, f = 1MHz - - 250 pF
Small-Signal Current Gain hfe Vce = 4V, Ic = .5A, f = 50kHz 20 - - -
