AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC864
v01.0110
General Description
Features
Functional Diagram
The HMC864 is a three stage GaAs pHEMT MMIC
1 Watt Power Amplier which operates between
24 and 29.5 GHz. The HMC864 provides 27 dB of
gain, and +31 dBm of saturated output power and
18% PAE from a +6V supply. The RF I/Os are DC
blocked and matched to 50 Ohms for ease of integra-
tion into Multi-Chip-Modules (MCMs). All data is taken
with the chip in a 50 Ohm test xture connected via
0.025 mm (1 mil) diameter wire bonds of length 0.31
mm (12 mils).
Saturated Output Power: +31 dBm @ 18% PAE
High Output IP3: +40 dBm
High Gain: 27 dB
DC Supply: +6V @ 750mA
No External Matching Required
Die Size: 2.41 x 1.65 x 0.1 mm
Electrical Specications, TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 750mA [1]
Typical Applications
The HMC864 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 24 - 27 27 - 29.5 GHz
Gain 24 27 22 25 dB
Gain Variation Over Temperature 0.021 0.027 dB/ °C
Input Return Loss 27 25 dB
Output Return Loss 19 14 dB
Output Power for 1 dB Compression (P1dB) 27 29 27 29 dBm
Saturated Output Power (Psat) 31 30 dBm
Output Third Order Intercept (IP3)[2] 39 40 dBm
Total Supply Current (Idd) 750 750 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 750mA typical.
[2] Measurement taken at +6V @ 750mA, Pout / Tone = +19 dBm
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain &
Return Loss vs. Frequency Gain vs. Temperature
P1dB vs. Temperature P1dB vs. Supply Voltage
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
-40
-30
-20
-10
0
10
20
30
21 24 27 30
S21
S11
S22
FREQUENCY (GHz)
RESPONSE (dB)
18
20
22
24
26
28
30
32
34
24 25 26 27 28 29 30
+25C
+85C
-55C
FREQUENCY (GHz)
GAIN (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
24 25 26 27 28 29 30
+25C
+85C
-55C
FREQUENCY (GHz)
RETURN LOSS (dB)
-25
-20
-15
-10
-5
0
24 25 26 27 28 29 30
+25C
+85C
-55C
FREQUENCY (GHz)
RETURN LOSS (dB)
23
25
27
29
31
33
24 25 26 27 28 29 30
+25C
+85C
-55C
FREQUENCY (GHz)
P1dB (dBm)
23
25
27
29
31
33
24 25 26 27 28 29 30
6.0V
5.5V
5.0V
FREQUENCY (GHz)
P1dB (dBm)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Output IP3 vs.
Supply Current, Pout/Tone = +19 dBm
Output IP3 vs.
Temperature, Pout/Tone = +19 dBm
Psat vs. Supply Current (Idd)P1dB vs. Supply Current (Idd)
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
23
25
27
29
31
33
24 25 26 27 28 29 30
700mA
750mA
800mA
FREQUENCY (GHz)
P1dB (dBm)
23
25
27
29
31
33
24 25 26 27 28 29 30
700mA
750mA
800mA
FREQUENCY (GHz)
Psat (dBm)
36
38
40
42
44
46
24 25 26 27 28 29 30
+25C
+85C
-55C
FREQUENCY (GHz)
IP3 (dBm)
36
38
40
42
44
46
24 25 26 27 28 29 30
700mA
750mA
800mA
FREQUENCY (GHz)
IP3 (dBm)
Psat vs. Temperature Psat vs. Supply Voltage
23
25
27
29
31
33
24 25 26 27 28 29 30
+25C
+85C
-55C
FREQUENCY (GHz)
Psat (dBm)
23
25
27
29
31
33
24 25 26 27 28 29 30
6.0V
5.5V
5.0V
FREQUENCY (GHz)
Psat (dBm)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 4
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Power Compression @ 27 GHz Reverse Isolation vs. Temperature
Output IP3 vs.
Supply Voltage, Pout/Tone = +19 dBm
Output IM3 @ Vdd = +5.5V Output IM3 @ Vdd = +6V
Output IM3 @ Vdd = +5V
36
38
40
42
44
46
24 25 26 27 28 29 30
6.0V
5.5V
5.0V
FREQUENCY (GHz)
IP3 (dBm)
0
10
20
30
40
50
60
12 14 16 18 20 22 24 26
24 GHz
26 GHz
28 GHz
29 GHz
Pout/TONE (dBm)
IM3 (dBc)
0
10
20
30
40
50
60
12 14 16 18 20 22 24 26
24 GHz
26 GHz
28 GHz
29 GHz
Pout/TONE (dBm)
IM3 (dBc)
0
10
20
30
40
50
60
12 14 16 18 20 22 24 26
24 GHz
26 GHz
28 GHz
29 GHz
Pout/TONE (dBm)
IM3 (dBc)
0
5
10
15
20
25
30
35
-15 -12 -9 -6 -3 0 3 6 9
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), GAIN (dB), PAE (%)
-60
-50
-40
-30
-20
-10
0
24 25 26 27 28 29 30
+25C
+85C
-55C
FREQUENCY (GHz)
REVERSE ISOLATION (dB)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vd) +6.5V
RF Input Power (RFIN) +26 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 75 mW/°C above 85 °C) 4.85 W
Thermal Resistance
(channel to die bottom) 13.4 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (V) Idd (mA)
+5.0 750
+5.5 750
+6.0 750
Note: Amplier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 750mA at +5.5V
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Power Dissipation
Gain & Power vs.
Supply Voltage @ 27 GHz
Gain & Power vs.
Supply Current @ 27 GHz
25
27
29
31
33
35
700 720 740 760 780 800
Gain (dB)
P1dB (dBm)
Psat (dBm)
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
25
27
29
31
33
35
5 5.2 5.4 5.6 5.8 6
Gain (dB)
P1dB (dBm)
Psat (dBm)
Vdd (V)
GAIN (dB), P1dB (dBm), Psat (dBm)
4
4.5
5
5.5
6
-15 -12 -9 -6 -3 0 3 6
24 GHz
25 GHz
26 GHz
27 GHz
28 GHz
INPUT POWER (dBm)
POWER DISSIPATION (W)
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 6
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Pad Descriptions
Pad Number Function Description Interface Schematic
1 RFIN This pad is AC coupled
and matched to 50 Ohms.
2 Vgg
Gate control for PA. Adjust Vgg to achieve recommended
bias current. External bypass caps 100 pF, 0.1 µF and
4.7 µF are required.
3, 5 Vdd1, 2 Drain bias for amplier. External bypass caps
100 pF, 0.1µF and 4.7 µF are required.
4 RFOUT This pad is AC coupled
and matched to 50 Ohms.
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Assembly Diagram
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 8
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
OBSOLETE
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D