SPICE MODEL: MMST2222A MMST2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * Epitaxial Planar Die Construction SOT-323 Complementary PNP Type Available (MMST2907A) A Ultra-Small Surface Mount Package C Available in Lead Free/RoHS Compliant Version (Note 2) B C B Mechanical Data * * * * * * * * E G Case: SOT-323 H Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K M Moisture Sensitivity: Level 1 per J-STD-020C Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 4 J D Terminal Connections: See Diagram E L C Marking (See Page 4): K3P Ordering & Date Code Information: See Page 4 Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 a 0 8 All Dimensions in mm Weight: 0.006 grams (approximate) B Maximum Ratings E @ TA = 25C unless otherwise specified Symbol MMST2222A Unit Collector-Base Voltage Characteristic VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 600 mA Power Dissipation (Note 1) Pd 200 mW RqJA 625 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Note: 0.40 G 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30080 Rev. 7 - 2 1 of 4 www.diodes.com MMST2222A a Diodes Incorporated Electrical Characteristics Characteristic @ TA = 25C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 75 3/4 V Collector-Emitter Breakdown Voltage V(BR)CEO 40 3/4 V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 3/4 V IE = 10mA, IC = 0 Collector Cutoff Current ICBO 3/4 10 nA mA VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150C Collector Cutoff Current ICEX 3/4 10 nA VCE = 60V, VEB(OFF) = 3.0V Emitter Cutoff Current IEBO 3/4 10 nA VEB = 3.0V, IC = 0 IBL 3/4 20 nA VCE = 60V, VEB(OFF) = 3.0V hFE 35 50 75 100 40 50 35 3/4 3/4 3/4 300 3/4 3/4 3/4 3/4 IC = 100mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55C IC = 150mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 3/4 0.3 1.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.6 3/4 1.2 2.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo 3/4 8 pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo -- 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 300 3/4 MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF 3/4 4.0 dB VCE = 10V, IC = 100mA, RS = 1.0kW, f = 1.0kHz Delay Time td 3/4 10 ns Rise Time tr 3/4 25 ns Storage Time ts 3/4 225 ns Fall Time tf 3/4 60 ns OFF CHARACTERISTICS (Note 3) Base Cutoff Current IC = 10mA, IE = 0 ON CHARACTERISTICS (Note 3) DC Current Gain SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS Notes: VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 3. Short duration test pulse used to minimize self-heating effect. DS30080 Rev. 7 - 2 2 of 4 www.diodes.com MMST2222A 1000 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 200 150 100 50 TA = 125C 100 TA = -25C TA = +25C 10 VCE = 1.0V 0 0 25 50 75 100 175 150 125 1 200 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2, Typical DC Current Gain vs Collector Current 0.1 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature 35 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) f = 1MHz CT, CAPACITANCE (pF) 30 25 20 15 Cibo 10 Cobo 5 0 0 2 4 6 8 10 12 14 16 18 IC = 30mA IC = 1mA IC = 10mA 1.8 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 20 VR, REVERSE VOLTAGE (V) Fig. 3, Typical Capacitance Characteristics 0.1 10 1 IB, BASE CURRENT (mA) Fig. 4, Typical Collector Saturation Region 0.01 100 1.0 IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2 0.1 TA = -50C 0 10 1 100 VBE(ON), BASE EMITTER VOLTAGE (V) 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1000 1000 TA = -50C 0.8 0.7 TA = 25C 0.6 0.5 TA = 150C 0.4 0.3 0.2 10 1 100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base-Emitter Voltage vs. Collector Current 0.1 IC, COLLECTOR CURRENT (mA) Fig. 5, Collector-Emitter Saturation Voltage vs. Collector Current DS30080 Rev. 7 - 2 VCE = 5V 0.9 3 of 4 www.diodes.com MMST2222A fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current Ordering Information Notes: (Note 4) Device Packaging Shipping MMST2222A-7 SOT-323 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST2222A-7-F. YM Marking Information K3P K3P = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30080 Rev. 7 - 2 4 of 4 www.diodes.com MMST2222A