DATA SH EET
Product specification September 1992
DISCRETE SEMICONDUCTORS
BLF244
VHF power MOS transistor
September 1992 2
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
FEATURES
•High power gain
•Low noise figure
•Easy power control
•Good thermal stability
•Withstands full load mismatch
•Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (VGS)
groups are available on request.
PINNING - SOT123
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
k
, halfpage
1
23
4
MSB057
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 175 28 15 >13 >50
September 1992 3
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −65 V
±VGS gate-source voltage −20 V
IDDC drain current −3A
P
tot total power dissipation up to Tmb = 25 °C−38 W
Tstg storage temperature −65 150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-mb thermal resistance from
junction to mounting base Tmb =25°C; Ptot = 38 W 4.6 K/W
Rth mb-h thermal resistance from
mounting base to heatsink Tmb =25°C; Ptot = 38 W 0.3 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDS(on).
(2) Tmb =25°C.
handbook, halfpage
10−1
1
10
110
I
D
(A)
VDS (V) 102
(1)
MRA919
(2)
Fig.3 Power/temperature derating curves.
(1) Short-time operation during mismatch.
(2) Continuous operation.
handbook, halfpage
0 50 100 150
50
40
Ptot
(W)
Th (°C)
20
10
0
30
MGP151
(1)
(2)
September 1992 4
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID=5mA 65 −− V
I
DSS drain-source leakage current VGS = 0; VDS = 28 V −−1mA
I
GSS gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA
V
GS(th) gate-source threshold voltage ID = 5 mA; VDS = 10 V 2 −4.5 V
∆VGS gate-source voltage difference of
matched devices ID = 5 mA; VDS = 10 V −−100 mV
gfs forward transconductance ID = 0.75 A; VDS = 10 V 0.6 −− S
R
DS(on) drain-source on-state resistance ID = 0.75 A; VGS = 10 V −0.8 1.5 Ω
IDSX on-state drain current VGS = 10 V; VDS = 10 V −5−A
Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz −60 −pF
Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz −40 −pF
Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz −4.5 −pF
F noise figure (see Fig. 13) ID = 0.5 A; VDS = 28 V; R1 = 23 Ω;
Th = 25 °C; f = 175 MHz;
Rth mb-h = 0.3 K/W
−4.3 −dB
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
VDS = 10 V; valid for Tj= 25 to 125 °C.
handbook, halfpage
2
−8
MGP152
10 102103
1
−6
−4
−2
0
T.C.
(mV/K)
ID (mA)
Fig.5 Drain current as a function of gate-source
voltage, typical values.
VDS =10V.
solid line: Tj=25°C.
dotted line: Tj= 125 °C.
handbook, halfpage
048 16
6
0
2
4
12
MGP153
ID
(A)
VGS (V)
September 1992 5
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
VGS = 10 V; ID= 0.75 A.
handbook, halfpage
0
2
1
040 80 160120
MGP154
RDS(on)
(Ω)
Tj (°C)
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
160
120
40
80
010 20 40
30
MGP155
C
(pF)
Cis
Cos
VDS (V)
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
20
10
020 40
MGP156
Crs
(pF)
VDS (V)
September 1992 6
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 3 K/W; unless otherwise specified.
RF performance in CW operation in a common source class-B circuit.
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) GP
(dB) ηD
(%)
Zi
(Ω)
(note 1)
ZL
(Ω)R1
(Ω)
CW, class-B 175 28 25 15 > 13
typ. 17 > 50
typ. 65 3.0 −j4.0 6.3 +j9.8 46.4//46.4
175 12.5 25 6 typ. 15 typ. 60 3.0 −j4.0 4.5 +j3.3 100
Note
1. R1 included.
Ruggedness in class-B operation
The BLF244 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
Th=25°C; Rth mb-h = 0.3 K/W; at rated load power.
Fig.9 Load power as a function of input power,
typical values.
Class-B operation; VDS = 28 V; IDQ =25mA;
f = 175 MHz; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
02
30
10
20
1
MGP157
PL
(W)
PIN (W)
Fig.10 Power gain and efficiency as functions of
load power, typical values.
Class-B operation; VDS = 28 V; IDQ =25mA;
f = 175 MHz; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
0
20
10
0
100
50
0
10 20 30
MGP158
Gp
(dB)
Gp
PL (W)
ηD
(%)
ηD
September 1992 7
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
Fig.11 Load power as a function of input power,
typical values.
Class-B operation; VDS = 12.5 V; IDQ = 25 mA;
f = 175 MHz; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
012
20
0
10
MGP159
PL
(W)
PIN (W)
Fig.12 Power gain and efficiency as functions of
load power, typical values.
Class-B operation; VDS = 12.5 V; IDQ = 25 mA;
f = 175 MHz; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
0
20
12
8
16
4
100
80
60
40
20
48 1612
MGP160
Gp
(dB)
PL (W)
ηD
(%)
Gp
ηD
Fig.13 Test circuit for class-B operation.
f = 175 MHz.
handbook, full pagewidth
MGP161
50 Ω
input
C1 L1 L3 D.U.T. L4 L5
L6
C7
C14
L8L7
C3
C2
C4
C5
C6
C8
C13
C10
C9
C11C12
R3
50 Ω
output
L2 R1
R2 +VG+VD
September 1992 8
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
List of components (class-B test circuit)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric (εr= 4.5),
thickness 1⁄16 inch.
3. Refer to Application Information for value.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C12 multilayer ceramic chip capacitor
(note 1) 680 nF
C2 multilayer ceramic chip capacitor
(note 1) 20 pF
C3, C4, C9 film dielectric trimmer 5 to 60 pF 2222 809 08003
C5 multilayer ceramic chip capacitor
(note 1) 75 pF
C6 multilayer ceramic chip capacitor 10 nF 2222 852 47103
C7 multilayer ceramic chip capacitor
(note 1) 100 pF
C8 multilayer ceramic chip capacitor
(note 1) 47 pF
C10, C11 multilayer ceramic chip capacitor
(note 1) 11 pF
C13 solid tantalum capacitor 2.2 µF
C14 multilayer ceramic chip capacitor 100 nF 2222 852 47104
L1 4 turns enamelled 1 mm copper wire 32 nH length 6.3 mm
int. dia. 3 mm
leads 2 ×5mm
L2 1 turn enamelled 1 mm copper wire 12.2 nH int. dia. 5.6 mm
leads 2 ×5mm
L3, L4 stripline (note 2) 30 Ω15 ×6 mm
L5 6 turns enamelled 1 mm copper wire 119 nH length 10.4 mm
int. dia. 6 mm
leads 2 ×5mm
L6 grade 3B Ferroxcube RF choke 4312 020 36640
L7 2 turns enamelled 1 mm copper wire 19 nH length 2.4 mm
int. dia. 3 mm
leads 2 ×5mm
L8 4 turns enamelled 1 mm copper wire 28.5 nH length 8.5 mm
int. dia. 3 mm
leads 2 ×5mm
R1 metal film resistor (note 3)
R2 0.4 W metal film resistor 1 MΩ
R3 0.4 W metal film resistor 10 Ω
September 1992 9
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
Fig.14 Component layout for 175 MHz class-B test circuit.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being
unetched copper to serve as ground plane. Earth connections are made by fixing screws, copper straps and
hollow rivets under the sources and around the edges to provide a direct contact between the copper on the
component side and the ground plane.
Dimensions in mm.
handbook, full pagewidth
MGP162
C2
C1
C3 C4
C5
L1 L2
C7 C14
L5 R3
L6
+VD
C13
L7 C8
C9
L8 C11 C12
C10
R1
+VGC6
R2
L3 L4
strap
rivet
strap
70
150
September 1992 10
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
Fig.15 Input impedance as a function of frequency
(series components), typical values.
Class-B operation; VDS =28V;I
DQ =25mA;
P
L= 15 W; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
20 120
60
Zi
(Ω)
xi
0
20
40
40 60 80 100f (MHz)
MGP164
ri
Fig.16 Load impedance as a function of frequency
(series components), typical values.
Class-B operation; VDS =28V;I
DQ =25mA;
P
L= 15 W; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
20 120
25
0
5
MGP165
10
15
20
40 60 80 100
ZL
(Ω)
f (MHz)
RL
XL
Fig.17 Power gain as function of frequency, typical
values.
Class-B operation; VDS =28V;I
DQ =25mA;
P
L= 15 W; Th=25°C; Rth mb-h = 0.3 K/W.
handbook, halfpage
20 120
40
20
24
MGP166
28
32
36
40 60 80 100
Gp
(dB)
f (MHz)
September 1992 11
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT123A 97-06-28
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A
1
2
43
U
3
U
2
H
HL
b
Q
D
U
1
q
A
F
c
p
M
w
2
B
C
C
A
w
1
M
AB
α
UNIT A
mm
Db
5.82
5.56 0.18
0.10 9.73
9.47 9.63
9.42 20.71
19.93 3.33
3.04 6.61
6.09
7.47
6.37
cD1U2U3
9.78
9.39 1.020.51
w2
w1
45°
αL
5.61
5.16
U1
25.15
24.38
Q
4.63
4.11
q
18.42
F
2.72
2.31
inches 0.229
0.219 0.007
0.004 0.383
0.373 0.397
0.371 0.815
0.785 0.131
0.120 0.26
0.24
0.294
0.251 0.385
0.370 0.040.02
0.221
0.203 0.99
0.96
0.182
0.162 0.725
0.107
0.091
pH
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
September 1992 12
Philips Semiconductors Product specification
VHF power MOS transistor BLF244
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
