STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features * Maximum junction temperature: TJ = 175 C * Very high speed switching series 1 * Tail-less switching off 3 2 * Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A 1 TO-3PF TAB * Tight parameters distribution * Safe paralleling * Low thermal resistance 3 3 2 2 1 TO-247 1 TO-3P * Lead free package Applications Figure 1. Internal schematic diagram * Photovoltaic inverters * Uninterruptible power supply C (2, TAB) * Welding * Power factor correction * Very high frequency converters G (1) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order code Marking Package Packaging STGFW20V60F GFW20V60F TO-3PF Tube STGW20V60F GW20V60F TO-247 Tube STGWT20V60F GWT20V60F TO-3P Tube July 2013 This is information on a product in full production. DocID024851 Rev 1 1/19 www.st.com 19 Contents STGFW20V60F, STGW20V60F, STGWT20V60F Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DocID024851 Rev 1 STGFW20V60F, STGW20V60F, STGWT20V60F 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-3PF VCES Collector-emitter voltage (VGE = 0) TO-247 TO-3P 600 V (1) 40 A IC Continuous collector current at TC = 25 C 40 IC Continuous collector current at TC = 100 C 20(1) 20 A Pulsed collector current 80(1) 80 A ICP (2) VGE Gate-emitter voltage PTOT Total dissipation at TC = 25 C 52 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 C) 3.5 TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C TJ 20 V 167 W kV 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature Table 3. Thermal data Value Symbol Parameter Unit TO-3PF RthJC Thermal resistance junction-case RthJA Thermal resistance junction-ambient DocID024851 Rev 1 TO-247 2.9 TO-3P 0.9 50 C/W C/W 3/19 Electrical characteristics 2 STGFW20V60F, STGW20V60F, STGWT20V60F Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.8 VGE = 15 V, IC = 20 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 20 A TJ = 175 C VGE(th) Max. 600 VGE = 15 V, IC = 20 A VCE(sat) Typ. 2.2 2.15 V 2.3 5 6 7 V VCE = 600 V 25 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/19 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 20 A, VGE = 15 V, see Figure 26 Qge Gate-emitter charge Qgc Gate-collector charge DocID024851 Rev 1 Min. Typ. Max. Unit - 2800 - pF - 110 - pF - 64 - pF - 116 - nC - 24 - nC - 50 - nC STGFW20V60F, STGW20V60F, STGWT20V60F Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 38 - ns Current rise time - 10 - ns - 1556 - A/s - 149 - ns - 15 - ns Turn-on current slope VCE = 400 V, IC = 20 A, VGE = 15 V, di/dt = 100 A/s see Figure 25 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 200 - J Eoff(2) Turn-off switching losses - 130 - J Total switching losses - 330 - J Turn-on delay time - 37 - ns Current rise time - 12 - ns - 1340 - A/s - 150 - ns - 23 - ns Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope VCE = 400 V, IC = 20 A, di/dt = 100 A/s, VGE = 15 V, TJ = 175 C, see Figure 25 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 430 - J Eoff(2) Turn-off switching losses - 210 - J Total switching losses - 640 - J Ets 1. Parameter Energy losses include reverse recovery of the external diode. The diode is the same of the copacked STGW20V60DF 2. Turn-off losses include also the tail of the collector current. DocID024851 Rev 1 5/19 Electrical characteristics 2.1 STGFW20V60F, STGW20V60F, STGWT20V60F Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature for TO-247 and TO-3P AM17175v1 Ptot (W) Figure 3. Collector current vs. case temperature for TO-247 and TO-3P 160 40 140 35 120 30 100 25 80 20 60 15 40 10 20 5 0 AM17174v1 I C (A) 0 0 25 50 75 0 100 125 150 175 TC (C) Figure 4. Power dissipation vs. case temperature for TO-3PF 25 50 75 Figure 5. Collector current vs. case temperature for TO-3PF AM17175v2 Ptot (W) 100 125 150 175 TC (C) AM17174v2 I C (A) 50 20 40 15 30 10 20 5 10 0 6/19 0 25 50 75 100 125 150 175 TC (C) 0 DocID024851 Rev 1 0 25 50 75 100 125 150 175 TC (C) STGFW20V60F, STGW20V60F, STGWT20V60F Figure 6. Output characteristics (TJ = 25 C) AM17171v1 Ic (A) 15 V Electrical characteristics Figure 7. Output characteristics (TJ = 175 C) AM17172v1 Ic (A) 11 V 70 70 60 60 50 50 15 V 40 11 V 40 13 V 13 V 9V 30 30 9V 20 20 10 10 VGE =7 V VGE =7 V 0 0 1 2 3 4 VCE (V) Figure 8. VCE(SAT) vs. junction temperature VCE(sat) (V) 2.8 AM17176v1 VGE = 15V 0 0 2.6 3 4 VCE (V) Figure 9. VCE(SAT) vs. collector current VCE(sat) (V) AM17177v1 VGE = 15V TJ = 175C 3.6 2.4 3.2 IC = 20A 2.2 TJ = 25C 2.8 2.0 2.4 1.8 2.0 IC = 10A 1.6 TJ = - 40C 1.6 1.4 1.2 1.2 -50 -25 0 25 50 75 100 125 150 175 TJ (C) Figure 10. Safe operating area for TO-247 and TO-3P AM17179v1 I C (A) 10 0.8 0 10 20 30 40 50 60 70 80 I C (A) Figure 11. Safe operating area for TO-3PF AM17179v2 I C (A) 10 10 s 10 s 1 100 s 1 ms 0.1 (single pulse TC =25 C, TJ <=175 C; VGE =15 V) 10 100 s 1 ms 0.1 0.01 1 2 4.0 IC 40A 1 1 (single pulse TC=25C, TJ<=175C; VGE=15V) 100 VCE (V) 0.01 1 DocID024851 Rev 1 10 100 VCE (V) 7/19 Electrical characteristics STGFW20V60F, STGW20V60F, STGWT20V60F Figure 12. Normalized VGE(th) vs. junction temperature VGE(th) AM17181v1 norm AM17180v1 V(BR)CES norm VGE = 5V 1.1 Figure 13. Normalized V(BR)CES vs. junction temperature 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 0 50 100 150 TJ (C) Figure 14. Capacitance variations AM17183v1 C (pF) C ies 0.9 -50 0 50 100 150 TJ (C) Figure 15. Gate charge vs. gate-emitter voltage AM17182v1 VGE (V) VCC = 480 V IC = 20 A 16 14 12 1000 10 Coes C res 8 6 100 4 2 0 10 0.1 1 10 0 VCE (V) Figure 16. Switching losses vs. collector current AM17185v1 E (J) 50 75 100 125 Qg (nC) Figure 17. Switching losses vs. gate resistance AM17184v1 E (J) VCC 400V, VGE= 15V, IC =20 A, TJ = 175C VCC 400V, VGE= 15V, Rg=10, TJ = 175C 1000 25 700 E ON 800 500 600 EON E OFF 400 300 EOFF 200 0 8/19 0 10 20 30 40 Ic (A) 100 DocID024851 Rev 1 0 10 20 30 40 RG () STGFW20V60F, STGW20V60F, STGWT20V60F Figure 18. Switching losses vs. junction temperature AM17186v1 E (J) Electrical characteristics Figure 19. Switching losses vs. collector emitter voltage AM17187v1 E (J) 600 450 VGE= 15V, TJ = 175 C IC = 20 A, Rg= 10 VCC 400V, VGE= 15V, IC = 20 A, Rg= 10 400 500 350 EON 400 300 EON 250 300 EOFF EOFF 200 200 150 100 0 25 50 100 125 150 175 TJ (C) 75 100 150 200 250 300 350 400 450 Vce (V) Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance AM17188v1 ts (ns) VCC= 400V, VGE = 15V, Tj=175 C Ic = 40 A VCC = 400V, VGE = 15V, Tj =175C, Rg = 10 t doff t doff 100 t don 100 t don tr 10 tf 10 tr tf 1 AM17189v1 ts (ns) 0 10 20 30 40 Ic (A) 1 0 10 20 30 40 Rg () Figure 22. Transfer characteristics AM17173v1 IC (A) 70 60 50 40 30 TJ=175C 20 -40C 25C 10 7 8 9 10 11 VGE (V) DocID024851 Rev 1 9/19 Electrical characteristics STGFW20V60F, STGW20V60F, STGWT20V60F Figure 23. Thermal data for TO-3PF ZthTOF3T_A K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 -2 -3 -4 10 10 10 -1 10 10 tp (s) Figure 24. Thermal data for TO-3P and TO-247 ZthTO2T_B K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 10/19 -4 10 -3 10 DocID024851 Rev 1 -2 10 -1 10 tp (s) STGFW20V60F, STGW20V60F, STGWT20V60F 3 Test circuits Test circuits Figure 25. Test circuit for inductive load switching Figure 26. Gate charge test circuit AM01504v1 AM01505v1 Figure 27. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff AM01506v1 DocID024851 Rev 1 11/19 Package mechanical data 4 STGFW20V60F, STGW20V60F, STGWT20V60F Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 7. TO-3PF mechanical data mm Dim. Min. Typ. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 12/19 Max. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 DocID024851 Rev 1 10.20 STGFW20V60F, STGW20V60F, STGWT20V60F Package mechanical data Figure 28. TO-3PF drawing L3 L D E A C D1 Dia L2 L6 L7 F2(3x) F(3x) G1 H G R L5 N L4 7627132_C DocID024851 Rev 1 13/19 Package mechanical data STGFW20V60F, STGW20V60F, STGWT20V60F Table 8. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 14/19 Max. 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID024851 Rev 1 5.70 STGFW20V60F, STGW20V60F, STGWT20V60F Package mechanical data Figure 29. TO-247 drawing 0075325_G DocID024851 Rev 1 15/19 Package mechanical data STGFW20V60F, STGW20V60F, STGWT20V60F Table 9. TO-3P mechanical data mm Dim. Min. Typ. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 16/19 Max. 3.50 L2 18.20 oP 3.10 18.40 18.60 3.30 Q 5 Q1 3.80 DocID024851 Rev 1 STGFW20V60F, STGW20V60F, STGWT20V60F Package mechanical data Figure 30. TO-3P drawing 8045950_A DocID024851 Rev 1 17/19 Revision history 5 STGFW20V60F, STGW20V60F, STGWT20V60F Revision history Table 10. Document revision history 18/19 Date Revision 11-Jul-2013 1 Changes Initial release. DocID024851 Rev 1 STGFW20V60F, STGW20V60F, STGWT20V60F Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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