This is information on a product in full production.
July 2013 DocID024851 Rev 1 1/19
19
STGFW20V60F,
STGW20V60F, STGWT20V60F
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•Very high speed switching series
•Tail-less switching off
•Low saturation voltage: V
CE(sat)
= 1.8 V (typ.)
@ I
C
= 20 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
•Lead free package
Applications
•Photovoltaic inverters
•Uninterruptible power supply
•Welding
•Power factor correction
•Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
E (3)
G (1)
TO-247 TO-3P
123
TAB
1
2
3
1
111
23
TO-3PF
Table 1. Device summary
Order code Marking Package Packaging
STGFW20V60F GFW20V60F TO-3PF Tube
STGW20V60F GW20V60F TO-247 Tube
STGWT20V60F GWT20V60F TO-3P Tube
www.st.com
Contents STGFW20V60F, STGW20V60F, STGWT20V60F
2/19 DocID024851 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DocID024851 Rev 1 3/19
STGFW20V60F, STGW20V60F, STGWT20V60F Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratin gs
Symbol Parameter Value Unit
TO-3PF TO-247 TO-3P
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continuous collector current at T
C
= 25 °C 40
(1)
1. Limited by maximum junction temperature.
40 A
I
C
Continuous collector current at T
C
= 100 °C 20
(1)
20 A
I
CP(2)
2. Pulse width limited by maximum junction temperature
Pulsed collector current 80
(1)
80 A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25 °C 52 167 W
V
ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C) 3.5 kV
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
TO-3PF TO-247 TO-3P
R
thJC
Thermal resistance junction-case 2.9 0.9 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGFW20V60F, STGW20V60F, STGWT20V60F
4/19 DocID024851 Rev 1
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA 600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 20 A 1.8 2.2
V
V
GE
= 15 V, I
C
= 20 A
T
J
= 125 °C 2.15
V
GE
= 15 V, I
C
= 20 A
T
J
= 175 °C 2.3
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 600 V 25 μA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-2800- pF
C
oes
Output capacitance - 110 - pF
C
res
Reverse transfer
capacitance -64-pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 20 A,
V
GE
= 15 V, see Figure 26
-116-nC
Q
ge
Gate-emitter charge - 24 - nC
Q
gc
Gate-collector charge - 50 - nC
DocID024851 Rev 1 5/19
STGFW 20V 60F, ST GW2 0V 60F , STG WT20 V6 0F Elect ri cal character istics
Table 6. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
V
GE
= 15 V, di/dt = 100 A/μs
see Figure 25
-38-ns
t
r
Current rise time - 10 - ns
(di/dt)
on
Turn-on current slope - 1556 - A/μs
t
d(off)
Turn-off delay time - 149 - ns
t
f
Current fall time - 15 - ns
E
on(1)
1. Energy losses include reverse recovery of the external diode. The diode is the same of the copacked
STGW20V60DF
Turn-on switching losses - 200 - μJ
E
off(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 130 - μJ
E
ts
Total switching losses - 330 - μJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
di/dt = 100 A/μs,
V
GE
= 15 V,
T
J
= 175 °C, see Figure 25
-37-ns
t
r
Current rise time - 12 - ns
(di/dt)
on
Turn-on current slope - 1340 - A/μs
t
d(off)
Turn-off delay time - 150 - ns
t
f
Current fall time - 23 - ns
E
on(1)
Turn-on switching losses - 430 - μJ
E
off(2)
Turn-off switching losses - 210 - μJ
E
ts
Total switching losses - 640 - μJ
Electrical characteristics STGFW20V60F, STGW20V60F, STGWT20V60F
6/19 DocID024851 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature for TO-247 and TO-3P Figure 3. Collector current vs. case temperature
for TO-247 and TO-3P
Figure 4. Power dissipation vs. case
temperature for TO-3PF Figure 5. Collector current vs. case temperature
for TO-3PF
AM17175v1
0
20
40
60
80
100
120
140
160
0 255075100125150175
P
tot
(W)
T
C
(°C)
AM17174v1
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150 175
I
C
(A)
T
C
(°C)
20
30
40
50
50 75 100 125 150 175
P
tot
(W)
T
C
(°C)
025
0
10
AM17175v2
AM17174v2
0
5
10
15
20
0 25 50 75 100 125 150 175
I
C
(A)
T
C
(°C)
DocID024851 Rev 1 7/19
STGFW 20V 60F, ST GW2 0V 60F , STG WT20 V6 0F Elect ri cal character istics
Figure 6. Output characteristics (T
J
= 25 °C) Figure 7. Output characteristics (T
J
= 175 °C)
Figure 8. V
CE(SAT)
vs. junction temperature Figure 9. V
CE(SAT)
vs. collector current
Figure 10. Safe operating area for TO-247 and
TO-3P Figure 11. Safe operating area for TO-3PF
AM17171v1
9 V
11 V
13 V
15 V
0
10
20
30
40
50
60
70
01234
Ic (A)
V
CE (V)
V
GE =7 V
AM17172v1
9 V
11 V
13 V
15 V
0
10
20
30
40
50
60
70
01234
Ic (A)
V
CE
(V)
V
GE
=7 V
AM17176v1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
V
CE(sat)
(V)
T
J
(ºC)
I
C
40A
I
C
= 20A
I
C
= 10A
V
GE
= 15V
AM17177v1
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
0 1020304050607080
V
CE(sat)
(V)
I
C
(A)
T
J
= 25°C
T
J
= - 40°C
T
J
= 175°C
V
GE
=15V
Electrical characteristics STGFW20V60F, STGW20V60F, STGWT20V60F
8/19 DocID024851 Rev 1
Figure 12. Normalized V
GE(th)
vs. junction
temperature Fig ure 13. Normali ze d V
(BR)CES
vs. junction
temperature
Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage
AM17181v1
0.6
0.7
0.8
0.9
1.0
1.1
-50 0 50 100 150
V
GE(th)
norm
T
J(ºC)
V = 5V
GE
AM17180v1
0.9
1.0
1.1
-50 0 50 100 150
V
(BR)CES
norm
T
J
(ºC)
AM17183v1
10
100
1000
0.1 1 10
C (pF)
VCE (V)
C
res
C
oes
C
ies
Figure 16. Switching losses vs. collector
current Figure 17. Switching losses vs. gate resistance
AM17185v1
0
200
400
600
800
1000
010203040
E (μJ)
Ic (A)
E
ON
E
OFF
V
CC
400V, V
GE
= 15V,
Rg=10Ω, T
J
= 175°C
AM17184v1
100
300
500
700
010203040
E (μJ)
RG(Ω)
E
ON
E
OFF
V
CC
400V, V
GE
= 15V,
I
C
=20 A, T
J
= 175°C
DocID024851 Rev 1 9/19
STGFW 20V 60F, ST GW2 0V 60F , STG WT20 V6 0F Elect ri cal character istics
Figure 18. Switching losses vs. junction
temperature F igure 19. Switch ing losses vs. co llec tor
emitter voltage
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
Figure 22. Transfer characteristics
AM17186v1
100
150
200
250
300
350
400
450
0 25 50 75 100 125 150 175
E (μJ)
T
J
(ºC)
E
ON
E
OFF
V
CC
400V, V
GE
= 15V,
I
C
= 20 A, Rg= 10 Ω
AM17187v1
100
200
300
400
500
600
150 200 250 300 350 400 450
E (μJ)
Vce (V)
E
ON
E
OFF
V
GE
= 15V, T
J
= 175 °C
I
C
= 20 A, Rg= 10 Ω
AM17188v1
1
10
100
010203040
t
s
(ns)
Ic (A)
V
CC
= 400V, V
GE
= 15V,
Tj =175
°
C, Rg = 10 Ω tdoff
tdon
tr
tf
AM17189v1
tf
1
10
100
0 10203040
t
s
(ns)
Rg (Ω)
V
CC
= 400V, V
GE
= 15V,
Tj=175 °C Ic = 40 A
tdoff
tdon
tr
AM17173v1
T
J
=175°C
10
20
30
40
50
60
70
7891011
I
C
(A)
V
GE
(V)
-40°C
25°C
Electrical characteristics STGFW20V60F, STGW20V60F, STGWT20V60F
10/19 DocID024851 Rev 1
Figure 23. Thermal data for TO-3PF
Figure 24. Thermal data for T O-3P and TO-247
10
-5
10
-4
10
-3
t
p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
10
-2
10
-1
10
ZthTOF3T_A
10-5 10-4 10-3 10-2 10-1
t
p(s)
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
DocID024851 Rev 1 11/19
STGFW20V60F, STGW20V60F, STGWT20V60F Test circuits
3 Test circuits
Figure 25. Test circuit for inductive load
switching Figure 26. Gate charge test circuit
Figure 27. Switching waveform
AM01504v1
AM01505v1
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
Package mechanical data STGFW20V60F, STGW20V60F, STGWT20V60F
12/19 DocID024851 Rev 1
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 7. TO-3PF mechanical data
Dim. mm
Min. Typ. Max.
A5.30 5.70
C2.80 3.20
D3.10 3.50
D1 1.80 2.20
E0.80 1.10
F0.65 0.95
F2 1.80 2.20
G10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15
N1.80 2.20
R3.80 4.20
Dia 3.40 3.80
DocID024851 Rev 1 13/19
STGFW20V60F, STGW20V60F, STGWT20V60F Package mechanical data
Figure 28. TO-3PF drawing
L3
L
Dia
L2
AC
D
D1
E
H
L5
L4
R
N
L6 L7
F(3x)
F2(3x)
G1
G
7627132_C
Package mechanical data STGFW20V60F, STGW20V60F, STGWT20V60F
14/19 DocID024851 Rev 1
Table 8. TO-247 me chanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
DocID024851 Rev 1 15/19
STGFW20V60F, STGW20V60F, STGWT20V60F Package mechanical data
Figure 29. TO-2 47 drawing
0075325_G
Package mechanical data STGFW20V60F, STGW20V60F, STGWT20V60F
16/19 DocID024851 Rev 1
Table 9. TO-3P mechanical da ta
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
DocID024851 Rev 1 17/19
STGFW20V60F, STGW20V60F, STGWT20V60F Package mechanical data
Figure 30. TO-3P drawin g
8045950_A
Revision history STGFW20V60F, STGW20V60F, STGWT20V60F
18/19 DocID024851 Rev 1
5 Revision history
Table 10. Document revisi on histor y
Date Revision Changes
11-Jul-2013 1 Initial release.
DocID024851 Rev 1 19/19
STGFW 20V 60F, ST GW2 0V 60F , STG WT20 V6 0F
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