PBSS5540Z
40 V low VCEsat PNP transistor
20 September 2019 Product data sheet
1. General description
PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z.
2. Features and benefits
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat generation.
AEC-Q101 qualified
3. Applications
Supply line switching circuits
Battery management applications
DC/DC converter applications
Strobe flash units
Heavy duty battery powered equipment (motor and lamp drivers)
MOSFET driver applications.
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter
voltage
open base - - -40 V
ICcollector current - - -5 A
ICM peak collector current single pulse; tp ≤ 1 ms - - -10 A
RCEsat collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
- 55 80
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 B base
2 C collector
3 E emitter
4 C collector 1 32
4
SC-73 (SOT223) sym132
E
C
B
Nexperia PBSS5540Z
40 V low VCEsat PNP transistor
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PBSS5540Z SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
7. Marking
Table 4. Marking codes
Type number Marking code
PBSS5540Z PB5540
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -40 V
VCEO collector-emitter voltage open base - -40 V
VEBO emitter-base voltage open collector - -6 V
ICcollector current - -5 A
ICM peak collector current - -10 A
IBM peak base current
single pulse; tp ≤ 1 ms
- -2 A
[1] - 1.35 WPtot total power dissipation Tamb ≤ 25 °C
[2] - 2 W
Tjjunction temperature - 150 °C
Tamb ambient temperature -65 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
in free air [1] - - 92 K/WRth(j-a) thermal resistance from
junction to ambient [2] - - 62 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
PBSS5540Z All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 20 September 2019 2 / 10
Nexperia PBSS5540Z
40 V low VCEsat PNP transistor
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V(BR)CBO collector-base
breakdown voltage
IC = -100 µA; IE = 0 A -40 - - V
V(BR)CEO collector-emitter
breakdown voltage
IC = -10 mA; IB = 0 A; Tamb = 25 °C -40 - - V
V(BR)EBO emitter-base
breakdown voltage
(collector open)
IE = -100 µA; IB = 0 mA; Tamb = 25 °C -6 - - V
VCB = -30 V; IE = 0 A; Tamb = 25 °C - - -100 nAICBO collector-base cut-off
current VCB = -30 V; IE = 0 A; Tj = 150 °C - - -50 µA
IEBO emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA
VCE = -2 V; IC = -500 mA; Tamb = 25 °C 250 350 -
VCE = -2 V; IC = -1 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
200 300 -
VCE = -2 V; IC = -2 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
150 250 -
hFE DC current gain
VCE = -2 V; IC = -5 A; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
50 150 -
IC = -500 mA; IB = -5 mA; Tamb = 25 °C - -80 -120 mV
IC = -1 A; IB = -10 mA; Tamb = 25 °C - -120 -170 mV
IC = -2 A; IB = -200 mA; Tamb = 25 °C - -110 -160 mV
VCEsat collector-emitter
saturation voltage
IC = -5 A; IB = -500 mA; Tamb = 25 °C - -250 -375 mV
RCEsat collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
- 55 80
VBEsat base-emitter saturation
voltage
IC = -5 A; IB = -500 mA; Tamb = 25 °C - - -1.3 V
VBEon base-emitter turn-on
voltage
VCE = -2 V; IC = -2 A; Tamb = 25 °C - -0.8 -1.25 V
fTtransition frequency VCE = -10 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
60 120 - MHz
Cccollector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
- 90 105 pF
PBSS5540Z All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 20 September 2019 3 / 10
Nexperia PBSS5540Z
40 V low VCEsat PNP transistor
mgu391
0
1000
200
400
600
800
- 1
hFE
IC (mA)
- 10 - 102- 103- 104
(1)
(2)
(3)
VCE = −2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 1. DC current gain as a function of collector
current; typical values
mgu393
0
- 1.2
- 0.4
- 0.8
- 10- 1 - 1 - 10 - 102- 103- 104
IC (mA)
VBE
(V)
(1)
(2)
(3)
VCE = −2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 2. Base-emitter voltage as a function of collector
current; typical values
mgu395
- 103
- 102
- 10
- 1
- 10- 1 - 1 - 10
IC (mA)
VCEsat
(mV)
- 102- 103- 104
(1)
(3)
(2)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 3. Collector-emitter saturation voltage as a
function of collector current; typical values
mgu394
0
- 1.2
- 0.4
- 0.8
- 10- 1 - 1 - 10 - 102- 103- 104
IC (mA)
VBEsat
(V)
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4. Base-emitter saturation voltage as a function of
collector current; typical values
PBSS5540Z All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 20 September 2019 4 / 10
Nexperia PBSS5540Z
40 V low VCEsat PNP transistor
mgu392
0
IC
(A)
VCE (V)
- 2
- 10
0
- 2
- 4
- 6
- 8
- 0.4 - 0.8 - 1.2 - 1.6
(10)
(9)
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
Tamb = 25 °C
(1) IB = −150 mA
(2) IB = −135 mA
(3) IB = −120 mA
(4) IB = −105 mA
(5) IB = −90 mA
(6) IB = −75 mA
(7) IB = −60 mA
(8) IB = −45 mA
(9) IB = −30 mA
(10) IB = −15 mA
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
mgu396
103
102
10
1
10- 1
- 10- 1 - 1 - 10
IC (mA)
RCEsat
(Ω)
- 102- 103- 104
(1)
(3)
(2)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 6. Collector-emitter equivalent on-resistance as a
function of collector current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PBSS5540Z All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 20 September 2019 5 / 10
Nexperia PBSS5540Z
40 V low VCEsat PNP transistor
12. Package outline
UNIT A1bpc D E e1HELpQ ywv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.10
0.01
1.8
1.5
0.80
0.60
b1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3 2.3
e
4.6 7.3
6.7
1.1
0.7
0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 04-11-10
06-03-16
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
1 32
4
Plastic surface-mounted package with increased heatsink; 4 leads SOT223
Fig. 7. Package outline SC-73 (SOT223)
PBSS5540Z All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 20 September 2019 6 / 10
Nexperia PBSS5540Z
40 V low VCEsat PNP transistor
13. Soldering
sot223_fr
1.2
(4×)
1.2
(3×)
1.3
(4×)
1.3
(3×)
6.15
7
3.85
3.6
3.5
0.3
3.9 7.65
2.3 2.3
6.1
4
2 31
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
Fig. 8. Reflow soldering footprint for SC-73 (SOT223)
sot223_fw
1.9
6.7
8.9
8.7
1.9
(3×)
1.9
(2×)
1.1
6.2
2.7
2.7
2
4
31
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
Fig. 9. Wave soldering footprint for SC-73 (SOT223)
PBSS5540Z All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 20 September 2019 7 / 10
Nexperia PBSS5540Z
40 V low VCEsat PNP transistor
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PBSS5540Z v.3 20190920 Product data sheet - PBSS5540Z v.2
Modifications: Automotive AEC-Q101 qualification added in sections "features and benefits", "Test
information" and "Legal information"
Characteristics: breakdown voltages added
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
Legal texts have been adapted to the new company name where appropriate.
PBSS5540Z v.2 20010921 Product data sheet - PBSS5540Z v.1
PBSS5540Z v.1 20010126 Product data sheet - -
PBSS5540Z All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 20 September 2019 8 / 10
Nexperia PBSS5540Z
40 V low VCEsat PNP transistor
15. Legal information
Data sheet status
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[1][2]
Product
status [3]
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Objective [short]
data sheet
Development This document contains data from
the objective specification for
product development.
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data sheet
Qualification This document contains data from
the preliminary specification.
Product [short]
data sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
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multiple devices. The latest product status information is available on
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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Notice: All referenced brands, product names, service names and
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PBSS5540Z All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 20 September 2019 9 / 10
Nexperia PBSS5540Z
40 V low VCEsat PNP transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 2
10. Characteristics............................................................ 3
11. Test information.......................................................... 5
12. Package outline.......................................................... 6
13. Soldering..................................................................... 7
14. Revision history..........................................................8
15. Legal information........................................................9
© Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 20 September 2019
PBSS5540Z All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 20 September 2019 10 / 10