Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol Typ Ma
x
8.1 12
33 40
RθJL 0.84 1.5
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s RθJA
°C/W
°C/W
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±12
Pulsed Drain Current
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
TA=25°C PDSM
3.1
Power Dissipation B
TC=25°C PD
100
TC=100°C
TA=70°C 2
Continuous Drain
Current B,G
Maximum UnitsParameter
TC=25°C G
TC=100°C B
30
110
80 A
ID
Avalanche Current C30 A
200
Junction and Storage Temperature Range -55 to 175
mJ
W
50
W
°C
Repetitive avalanche energy L=0.1mH C140
Power Dissipation A
AOB414, AOB414L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
Rev 2: Nov. 2004
Features
VDS (V) = 30V
ID = 110A
RDS(ON) < 4.2mΩ (VGS = 10V)
RDS(ON) < 4.8mΩ (VGS = 4.5V)
General Description
The AOB414 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. AOB414L ( Green Product ) is
offered in a lead-free package.
G
D
S
G D S
T
O-263
D2-PAK
T
op View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 0.8 1.1 1.5 V
ID(ON) 110 A
3.2 4.2
TJ=125°C 56
3.8 4.8 m
Ω
gFS 102 S
VSD 0.64 1 V
IS110 A
Ciss 9130 pF
Coss 625 pF
Crss 387 pF
Rg0.4 Ω
Qg(4.5V) 72.4 nC
Qgs 12.8 nC
Qgd 18.4 nC
tD(on) 15 ns
tr29.2 ns
tD(off) 106.5 ns
tf52 ns
trr 31.2 ns
Qrr 20.3 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=30A
Reverse Transfer Capacitance
IF=30A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
mΩ
VGS=4.5V, ID=30A
IS=1A,VGS=0V
VDS=5V, ID=30A
Turn-On Rise Time
Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.5Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=30A
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The Power
dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application
depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R
θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
012345
VDS (Volts)
Figure 1: On-Region Characteristics
ID(A)
VGS=2V
2.5V
10V
3.0V
4.5V
0
10
20
30
40
50
60
0 0.5 1 1.5 2 2.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
3.0
3.5
4.0
4.5
5.0
0 20406080100
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=10V
VGS=4.5V
2
4
6
8
10
12
0246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
ID=30A
25°C
125°C
ID=30A
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 102030405060708090
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
100
1000
10000
100000
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
40
80
120
160
200
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Power (W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJA Normalized Transient
Thermal Resistance
Coss
Crss
0.1
1
10
100
1000
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
µ
s
10ms 1m
s
0.1s
1
s
1
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=15V
ID=30A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
Ton T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
120
0.00001 0.0001 0.001 0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
ID( A) , P eak Avalanch e Current
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
TA=25°C
DD
D
A
VBV
IL
t−
⋅
=
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
Curren t rat ing ID(A)
Alpha & Omega Semiconductor, Ltd.