TOSHIBA {DISCRETE/OPTO} Sb DE fJo97250 ooorsuy fb , a 9097250 TOSHIBA (DISCRETE/OPTO) S6C 01944 DF-33-// SILICON NPN EPITAXIAL PLANAR TYPE | 2SC2 5 0 8 VHF BAND POWER AMPLIFIER APPLICATIONS. Unit tom am oY} 3 FEATURES : ASO 5 4 Output Power : Po=27W (Min.) ( =175MHz, Vcc=12.5V, Pi=4.2W ) >| MAXIMUM RATINGS (Ta=25C) 2 PRBMAX, a4 Co 3 oe CHARACTERISTIC SYMBOL RATING UNIT _ | T Collector-Base Voltage VcBO 40 Vv : i = Coll Emi Vol v 18 V 1B4n0i8 8) ollector-Emitter Voltage CEO 2475403 | Emitter-Base Voltage VEBO 4 v a 1. EMITTER als Collector Current I 6 A 2 BASE ; ; 3 EMITTER Collector Power Dissipation Pp 50 W 4, GOLLEGTOR (Te=25 TC) > JEDEC - Junction Temperature Ty 175 Cc MIAI _ Storage Temperature Range Tstg -65~175 c TOSHIBA R-10H1A Weight : 4.0g ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX. [UNIT Collector Cut-off Current IcBo Vcp=15V, Ip=0 - - 1 | mA \Collector-Base Breakdown _ _ Voltage. VBr)cBo | tc=10mA, Ip=0 40 - Vv Collector-Emitter Breakdown . _ _ _ Voltage V(BR)CEO | Ic=25mA, Ip=0 18 Vv Emitter-Base Breakdown _ _ _ _ Voltage V (BR) EBO Ip=lmA, Ig=0 4 Vv DC Current Gain hreE Vce=5V, I=3A 10 - 150 Collector Output Capacitance} Cob Vcp=10V, Ip=0, f=1MHz - - 80 | pF Output Power Po (Fig.) 27 29 - W Power Gain Gpe Vcc=12.5V, =175MHz, 8.0 8.4 - dB Collector Efficiency Io Pir4.2W 60 70 ~ h SOUULUUNNNUEAGOUUOTALURGUETULUUOOUGSESSUCUCEGOUOGEONGUEOGEOLEDSSNEAUOCUUUECUEEOOGOSARAEULEOUUSUUGOUEDUUTULOSEEGLODUTGOUSMEEEUTAATAUULELT ELLUM TOSHIBA CORPORATION 475TOSHIBA {DISCRETE/OPTO}F 9097250 TOSHIBA CDISCRETE/OPTO) . 7 28C2508 Fig. Cy C6 L1,L3 : 61 SILVER PLATED COPPER WIRE, Po TEST CIRCUIT c L Pi 1 1 Rg=50 RFC C2 : ~20pF C2,C3,C4 : ~30pF : 0.0LaF 61D Sk DE od7eso goo075us5 a T / 56C 07545 D T-33-// Lg Ca Py RL=500 C5 : 1000pF FEED THROUGH , LT L2 : #1 SILVER PLATED COPPER WIRE, 61D, 2T RFC : dL ENAMEL COATED COPPER WIRE, 61D, 8T Pos %o Pi 40 f=1475MHz + Vog=12.5V i To =25C Po | ~ 30 oa 5 a Oo rs wa m 2 20 ra 2 4 t 80 nw e R S 10 pt ~ 70 60 oO 0 2 4 6 INPUT POWER Py () Po Vcc 40 A f=175MHz go & L Te =25C be o wa LL Z aA ~ 30 3 = Yr AT Le a 4 Z| x | gM YN | we Eg | & g 20 = em 3 | 5 & 7 Dp RO Ss 8 Ilo o 0 9 1 1s 15 SUPPLY VOLTAGE Vuc (V) TOSHIBA CORPORATION iittiiniicsscinsreseciccnannreaseatevcernegegee eevee c gece ee aU AU evga LAU ULEC SEU UAUeUSURSUUSUUUA EU geR UUCNRULUE 476