Document Number: 94415 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 11-Aug-08 1
Phase Control Thyristors
(Hockey PUK Version), 1350 A
ST780CLPbF Series
Vishay High Power Products
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 1350 A
TO-200AC (B-PUK)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
1350 A
Ths 55 °C
IT(RMS)
2700 A
Ths 25 °C
ITSM
50 Hz 24 400
A
60 Hz 25 600
I2t
50 Hz 2986
kA2s
60 Hz 2726
VDRM/VRRM 400 to 600 V
tqTypical 150 µs
TJ- 40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
ST780C..L 04 400 500 80
06 600 700
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2Revision: 11-Aug-08
ST780CLPbF Series
Vishay High Power Products Phase Control Thyristors
(Hockey PUK Version), 1350 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV)
180° conduction, half sine wave
double side (single side) cooled
1350 (500) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 2700
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
24 400
t = 8.3 ms 25 600
t = 10 ms 100 % VRRM
reapplied
20 550
t = 8.3 ms 21 500
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
2986
kA2s
t = 8.3 ms 2726
t = 10 ms 100 % VRRM
reapplied
2112
t = 8.3 ms 1928
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 29 860 kA2√s
Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.80 V
High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.90
Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.14 mΩ
High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.13
Maximum on-state voltage VTM Ipk = 3600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.31 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current dI/dt Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
1000 A/µs
Typical delay time td
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
µs
Typical turn-off time tq
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs,
VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 150
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied 80 mA
Document Number: 94415 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 11-Aug-08 3
ST780CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 1350 A Vishay High Power Products
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10.0 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp ≤ 5 ms 3.0 A
Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp ≤ 5 ms 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate
trigger/current/voltage are the
lowest value which will trigger
all units 12 V anode to cathode
applied
200 -
mATJ = 25 °C 100 200
TJ = 125 °C 50 -
DC gate voltage required to trigger VGT
TJ = - 40 °C 2.5 -
VTJ = 25 °C 1.8 3.0
TJ = 125 °C 1.1 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.073
K/W
DC operation double side cooled 0.031
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.011
DC operation double side cooled 0.006
Mounting force, ± 10 % 14 700
(1500)
N
(kg)
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.009 0.009 0.006 0.006
TJ = TJ maximum K/W
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
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4Revision: 11-Aug-08
ST780CLPbF Series
Vishay High Power Products Phase Control Thyristors
(Hockey PUK Version), 1350 A
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
30° 60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST7 8 0 C . . L Se r i e s
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
DC
30°
60°
90°
120° 180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST7 8 0 C . . L Se r i e s
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 400 800 120016002000
30° 60° 90° 120° 180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST780C..L Series
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 500 1000 1500 2000 2500 3000
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST7 8 0 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
0
500
1000
1500
2000
2500
0 400 800 1200 1600 2000
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST780C..L Se ries
T = 125°C
J
0
500
1000
1500
2000
2500
3000
3500
0 500 1000 1500 2000 2500 3000
DC
180°
120°
90°
60°
30°
RM S Lim i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST780C..L Serie s
T = 125°C
J
Document Number: 94415 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 11-Aug-08 5
ST780CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 1350 A Vishay High Power Products
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
10000
12000
14000
16000
18000
20000
22000
110100
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Pea k Half Sine Wave On-st ate Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST7 8 0 C . . L Se r i e s
At Any Rat ed Loa d Cond it io n And Wit h
Rated V Applied Following Surge.
RRM
10000
12000
14000
16000
18000
20000
22000
24000
26000
0.01 0.1 1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Peak Ha lf Sine Wave On-state Current (A)
Initia l T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p l i e d
RRM
J
ST7 8 0 C . . L Se r i e s
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
100
1000
10000
0.5 1 1.5 2 2.5
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 1 2 5 ° C
J
ST7 8 0 C . . L Se r i e s
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJ-hs
Steady State Value
R = 0.073 K/ W
(Single Side Cooled)
R = 0.031 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
ST7 8 0 C . . L Se r i e s
Transient Thermal Impedance Z (K/W)
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6Revision: 11-Aug-08
ST780CLPbF Series
Vishay High Power Products Phase Control Thyristors
(Hockey PUK Version), 1350 A
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
T
j=25 °C
Tj = 1 2 5 ° C
Tj = - 4 0 ° C
(2) (3)
Instantaneous Gate Current (A)
Inst a nt a ne o us Ga t e Volt a g e ( V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
Frequenc y Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
De vice: ST780C..L Series
(4)
1- Thyristor
2- Essential part number
3- 0 = Converter grade
4- C = Ceramic PUK
5- Voltage code x 100 = VRRM (see Voltage Ratings table)
6- L = PUK case TO-200AC (B-PUK)
7- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
9- Lead (Pb)-free
8- Critical dV/dt: None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
Device code
51 324
6789
ST 78 0 C 06 L 1 - PbF
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95076
Document Number: 95076 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 01-Aug-07 1
TO-200AC (B-PUK)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN. 34 (1.34) DIA. MAX.
2 places
53 (2.09) DIA. MAX.
58.5 (2.3) DIA. MAX.
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
4.7 (0.18)
27 (1.06) MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
36.5 (1.44)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
20° ± 5°
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Revision: 12-Mar-12 1Document Number: 91000
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