DS11016 Rev. C-2 1 of 2 BAS31
BAS31
DUAL SURFACE MOUNT SWITCHING DIODE
•Case: SOT-23, Molded Plastic
•Terminals: Solderable per MIL-STD-202,
Method 208
•Polarity: See Diagram
•Marking: K21
•Weight: 0.008 grams (approx.)
Mechanical Data
A
E
JL
TOP VIEW
M
BC
H
G
D
K
Features
SOT-23
Dim Min Max
A0.37 0.51
B1.19 1.40
C2.10 2.50
D0.89 1.05
E0.45 0.61
G1.78 2.05
H2.65 3.05
J0.013 0.15
K0.89 1.10
L0.45 0.61
M0.076 0.178
All Dimensions in mm
Characteristic Symbol BAS31 Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current (Note 1) IFM 500 mA
Average Rectified Output Current (Note 1) IO250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0s IFSM 4.0
2.0 A
Power Dissipation (Note 1) Pd350 mW
Thermal Resistance Junction to Ambient Air (Note 1) RθJA 357 K/W
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
Maximum Ratings@ TA= 25°C unless otherwise specified
Notes: 1. Valid provided that terminals are kept at ambient temperature.
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage VFM
0.62
0.72
0.855
1.0
1.25 V
IF= 5.0mA
IF= 10mA
IF= 100mA
IF= 150mA
Maximum Peak Reverse Current IRM 2.5
50
30
25
µA
µA
µA
nA
VR= 75V
VR= 75V, Tj= 150°C
VR= 25V, Tj= 150°C
VR= 20V
Junction Capacitance Cj2.0 pF VR= 0, f = 1.0MHz
Reverse Recovery Time trr 4.0 ns IF= IR= 10mA,
Irr = 0.1 x IR,R
L= 100Ω
Electrical Characteristics @ TA= 25°C unless otherwise specified
•Fast Switching Speed
•Surface Mount Package Ideally Suited for
Automatic Insertion
•For General Purpose Switching Applications
•High Conductance
POWER SEMICONDUCTOR
DS11016 Rev. C-2 2 of 2 BAS31
1
10
100
1000
10,000
0 100 200
I , LEAKAGE CURRENT (nA)
R
T , JUNCTION TEMPERATURE (°C)
Fig. 2 Leakage Current vs Junction Temperature
j
V = 20V
R
10
1.0
100
1000
0.1
0.01
012
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
F