DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs FEATURES * High-speed switching * Interchangeability of drain and source connections * Low RDSon at zero gate voltage ( < 8 for PMBFJ108). handbook, halfpage 3 DESCRIPTION g Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers. 1 Top view d s 2 MAM385 PINNING - SOT23 PIN DESCRIPTION 1 drain 2 source 3 gate Note 1. Drain and source are interchangeable. April 1995 Fig.1 Simplified outline and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - 25 V VGSO gate-source voltage - -25 V VGDO drain-drain voltage - -25 V IG forward gate current (DC) 50 mA Ptot total power dissipation - 250 mW Tstg storage temperature -65 150 C Tj operating junction temperature - 150 C 2 Tamb = 25C; note 1 Philips Semiconductors Product specification PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER from junction to ambient (note 1) VALUE 500 UNIT K/W Notes 1. Mounted on an FR-4 printboard. STATIC CHARACTERISTICS Tj = 25 C. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -IGSS reverse gate current -VGS = 15 V VDS = 0 - 3 nA IDSX drain-source cut-off current VGS = -10 V VDS = 5 V - 3 nA IDSS drain current VGS = 0 VDS = 15 V 80 - mA PMBFJ109 40 - PMBFJ110 10 - - 25 V 3 10 V 2 6 0.5 4 - 8 PMBFJ109 - 12 PMBFJ110 - 18 PMBFJ108 -V(BR)GSS gate-source breakdown voltage -IG = 1 A VDS = 0 -VGS(off) gate-source cut-off voltage ID = 1 A VDS = 5 V PMBFJ108 PMBFJ109 PMBFJ110 RDS(on) drain-source on-resistance VGS = 0 V VDS = 0.1 V PMBFJ108 April 1995 3 Philips Semiconductors Product specification PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cis input capacitance VDS = 0 -VGS = 10 V f = 1 MHz 15 30 pF Cis input capacitance VDS = 0 -VGS = 0 f = 1 MHz Tamb = 25 C 50 85 pF Crs feedback capacitance VDS = 0 -VGS = 10 V f = 1 MHz 8 15 pF Switching times (see Fig.2) td delay time note 1 2 - ns ton turn-on time note 1 4 - ns ts storage time note 1 4 - ns toff turn-off time note 1 6 - ns Notes 1. Test conditions for switching times are as follows: VDD = 1.5 V, VGS = 0 to -VGS(off) (all types); -VGS(off) = 12 V, RL = 100 (PMBFJ108); -VGS(off) = 7 V, RL = 100 (PMBFJ109); -VGS(off) = 5 V, RL = 100 (PMBFJ110). 50 k, halfpage VDD 10 nF VGS = 0 V 0.1 F 10% Vi 10 F RL DUT -VGS off 90% toff SAMPLING SCOPE 50 ts 50 ton tf td tr 90% Vo MBK295 10% MBK294 Fig.2 Switching circuit. April 1995 Fig.3 Input and output waveforms. 4 Philips Semiconductors Product specification PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 April 1995 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 6