LAB
SEME
Prelim. 9/95
2N2914
2N2916
2N2918
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DUAL NPN
PLANAR TRANSISTORS IN
TO77 PACKAGE
VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage 1
VEBO Emitter – Base Voltage
ICContinuous Collector Current
PDTotal Device Dissipation TAMB = 25°C
Derate above 25°C
PDTotal Device Dissipation TC= 25°C
Derate above 25°C
TSTG Storage Temperature Range
TLLead temperature (Soldering, 10 sec.)
45V
45V
6V
30
300mW 500mW
1.72mW / °C 2.86W / °C
750mW 1.5W
4.3mW / °C 8.6mW / °C
–65 to 200°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–77 PACKAGE
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25°C unless otherwise stated)
PIN 1 – Collector 1
PIN 2 – Base 1
PIN 3 – Emitter 1
PIN 4 – Emitter 2
PIN 5 – Base 2
PIN 6 – Collector 2
1.02
(0.040)
Max.
12.7 (0 .5 00)
Min. 6.10 (0.240)
6.60 (0.260)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100) 0.74 (0.029)
1.14 (0.045)
1
6
4
3
2
45˚ 0.71 (0.028)
0.86 (0.034)
0.41 (0.016)
0.53 (0.021)
5
NOTES
1. Base – Emitter Diode Open Circuited.
EACH SIDE TOTAL DEVICE
2N2916 2N2918
Parameter Test Conditions Min. Typ. Max. Min. Typ. Max. Unit
—
mV
mV
0.9 1
3
5
0.8
1
0.8 1
5
10
1.6
2
VCE = 5V IC= 100
m
A
See Note 2.
VCE = 5V IC= 100
m
A
VCE = 5V IC= 10
m
A to 1mA
VCE = 5V IC= 100
m
A
TA1 = 25°C TA2 = –55°C
VCE = 5V IC= 100
m
A
TA1 = 25°C TA2 = 125°C
TRANSISTOR MATCHING CHARACTERISTICS
LAB
SEME
Prelim. 9/95
2N2914
2N2916
2N2918
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Parameter Test Conditions 1Min. Typ. Max. Unit
V
nA
m
A
nA
—
V
W
m
mho
—
pF
45
45
6
10
10
2
2
150 600
30
225
300
0.70
0.35
25 32
1
3
6
V(BR)CBO Collector – Base Breakdown Voltage
V(BR)CEO* Collector – Emitter Breakdown Voltage
V(BR)EBO Emitter – Base Breakdown Voltage
ICBO Collector Cut-off Current
ICEO Collector Cut-off Current
IEBO Emitter Cut-off Current
hFE DC Current Gain
VBE Base – Emitter Voltage
VCE(sat) Collector – Emitter Saturation Voltage
hib Small Signal Common – Base
Input Impedance
hob Small Signal Common – Base
Output Admittance
|hfe| Small Signal Common – Base
Current Gain
Cobo Common – Base Open Circuit
Output Capacitance
IC= 10
m
AI
E= 0
IC= 10mA IB= 0
IE= 10
m
AI
C= 0
VCB = 45V IE= 0
TA= 150°C
VCE = 5V IB= 0
VEB = 5V IC= 0
VCE = 5V IC= 10
m
A
TA= –55°C
VCE = 5V IC= 100
m
A
VCE = 5V IC= 1mA
VCE = 5V IC= 100
m
A
IB= 100
m
AI
C= 1mA
VCB = 5V IC= 1mA
f = 1kHz
VCB = 5V IC= 1mA
f = 1kHz
VCE = 5V IC= 500
m
A
f = 20MHz
VCB = 5V IE= 0
f = 140kHz to 1MHz
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
INDIVIDUAL TRANSISTOR CHARACTERISTICS
* Pulse Test: tp= 300
m
s ,
d£
1%.
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as hFE1.
hFE1
hFE2
|VBE1 – VBE2|
|
D
(VBE1 – VBE2)
D
TA|
Static Forward Current
Gain Balance Ratio
Base – Emitter Voltage
Differential
Base – Emitter Voltage
Differential Change With
Temperature
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