SILICON PLANAR NPN HIGH-SPEED SWITCHES The 2N 2218A, 2N 2219A, 2N 2221A and 2N 22224 are silicon planar epitaxial NPN tran- sistors in Jedec TO--39 (for 2N 2218A and 2N 2219A) anc in Jedec TO-18 (for 2N 2221A and 2N 2222A) metal cases. They are designed for high-speed switching applications at col- lector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. ABSOLUTE MAXIMUM RATINGS Vego Collector-base voltage (I_-= 0) 70 Vv Veeo Collector-emitter voltage (l_= 0) 40 Vv Veuo Emitter-base voitage (I= 0) 6 Vv le Collector current 0.8 A Prot Total power dissipation at Tamp < 25C for 2N 2218A and 2N 2219A 0.8 Ww for 2N 2221A and 2N 2222A 0.5 W at Tease 25C for 2N 2218A and 2N 2219A 3 Ww for 2N 2221A and 2N 2222A 1.8 W Tstg Storage temperature -65 to 200 c T; Junction temperature 175 C MECHANICAL DATA Dimensions in mm 223 7/76THERMAL D 2N 2218A 2N 2221A E ATA 2N 22194 2N 2222A Rth j-case Thermal resistance junction-case max 50 C/W 83.3 C/N Rin j-amp Thermal resistance junction-ambient max 187.5 C/W 300 C/W ELECTRICAL CHARACTERISTICS (Tamp = 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.) Unit lego Collector cutoff current (Ie = 0} Vep = 60V 10} nA Vep =60V Tamp = 150C 10] WA leex Collector cutoff current (Veg = -3V) | Vee = GOV 10| nA leBo Emitter cutoff current (I = 0) Ves = 3V 10) nA lpex Base cutoff current Vee = 60V 20} nA (Vee = -3V) Vigricao Collector-base breakdown voltage Io =10 WA 70 Vv (I~ = 0) Vierjyceo Collector-emitter breakdown voltage lo = 10mA 40 Vv Qs =0) ViereBo Emitter-base breakdown voltage Ip = 10 uA 6 Vv (Io = 0) Vee(saty Collector-emitter saturation voltage Io =150mA Ig = 15mA 0.3) V Ic =500mMA Ig =50mA 1] Vv Vee(saty Base-emitter saturation voltage lo =150mA Ig = 15mA 0.6 1.2) V Ic =500mA Ip =50mA 2} v hee DC current gain for 2N 2218A and 2N 2221A lc = 0.1mMA Veg =10V 120 - lo = 1mA Veg =10V 125 - *lic = 10mA Vee =10V -/35 - *}16 =150mMA Vee =10V (| 40 120) *lig =500MA Vege = 10V 25 _ *l12 =150mA Veg = 1V_ {20 - *T1c = 10mA Veg = 10V Tamp = ~55C 15 ~ 224ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.| Unit Nee DC current gain for 2N 2219A and 2N 2222A Ilo = 0.1MA Vege = 10V 35 > le = IMA Veg = 10V 50 > Tig = 10mA Vee = 10V 75 - Tig =160mMA Veg = 10V 100 300} Vig =500mMA Vege = 10V 40 ~ lle =150mMA Veg = 1V 50 - "Tie = 10mA Veg = 10V Tambp = -b5C 35 _ Nee Small signal current gain le =1mA Vce = 10V f =1kHz for 2N 2218A and 2N 2221A |30 150} for 2N 2219A and 2N 2222A | 50 300) - le =10mMA Vee = 10V f =1kHz for 2N 2218A and 2N 2221A | 50 300) for 2N 2219A and 2N 2222A | 75 375) fy Transition frequency [loc = 20mA Veg = 20V f =100MHz for 2N 2218A and 2N 2221A | 250 MHz for 2N 2219A and 2N 2222A | 300 MHz CEeBo Emitter-base capacitance Ic =0 Veg = 0.5V f = 100 kHz 25] pF CcBo Collector-base capacitance le =0 Vep = 10V f = 100 kHz 8] pF Retnie) Real part of input impedance le = 20mMA Vee = 20V f =300 MHz 60] 2 NF Noise figure Ilo = 100 WA Vege = OV Rg=1k2 f=1 kHz 4| dB hie * Input impedance le=imA Veg_ = 10V for 2N 2218A and 2N 2221A | 1 3.5] 2 for 2N 2219A and 2N 2222A |2 8) 2 lo =10mA Vege = 10V for 2N 2218A and 2N 2221A {0.2 1} a for 2N 2219A and 2N 2222A |0.25 1.25] 2 225ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.! Unit Hre ** Reverse valtage ratio le =1mA Vee = 10V for 2N 2218A and 2N 2221A 5x10"4] for 2N 2219A and 2N 2222A 8x10) le =10MA Veg = 10V for 2N 2218A and | 2N 2221A 2.5x104) for 2N 2219A and 2N 22224 4x104) hoe Output admittance le =1mMA Vog = 10V for 2N 2218A and 2N 2221A (3 151 uS for 2N 2219A and 2N 22: an 5 35] us le =10mMA Vee = 10V for 2N 2218A and 2N 2221A | 10 100) us for 2N 2219A and 2N 2222A | 25 200) us ta Delay time le =150MA Vee = 30V Igi = 15MA Vee = -0.5V 10} ns t Rise time lo = 150MA Veco = 30V lpi =15MA Vee = -0.5V 25] ns ts Storage time le = 150mMA Vec = 30V lpi =-lp2 = 15mA 225| ns ty Fall time Ilo = 150mMA Vee = 30V lp2 =-lp2 =15mA 60] ns lp Cpe Feedback time constant lo =20MA Vee = 20V f =31.8 MHz 150] ps * Pulsed: pulse duration == 300 us, **f=1kHz duty cycle = 1% 226