K4H510638E-TC/LAA - Samsung Electronics

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

Stacked 512Mb E-die DDR SDRAM Specification

Revision 1.0

(x4/x8)

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

st. 512Mb E-die Revision History

Revision 1.0 (July, 2003)

- First version release.

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe DQS

• Four banks operation

• Differential clock inputs(CK and CK)

• DLL aligns DQ and DQS transition with CK transition

• MRS cycle with address key programs

-. Read latency 2, 2.5 (clock)

-. Burst length (2, 4, 8)

-. Burst type (sequential & interleave)

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)

• Data I/O tra nsa cti o ns on bot h edge s of da ta strobe

• Edge aligned data output, center aligned data input

• DM for write masking only (x4, x8)

• Auto & Self refresh

• 7.8us refresh interval(8K/64ms refresh)

• Maximum burst refresh cycle : 8

• 66pin TSOP II package

Ordering Information

Part No. Org. Max Freq. Interface Package

K4H510638E-TC/LAA

st.128M x 4 AA(DDR266@CL=2) SSTL2 66pin TSOP II

K4H510638E-TC/LA2 A2(DDR266@CL=2)

K4H510638E-TC/LB0 B0(DDR266@CL=2.5)

K4H510738E-TC/LAA

st.64M x 8 AA(DDR266@CL=2) SSTL2 66pin TSOP II

K4H510738E-TC/LA2 A2(DDR266@CL=2)

K4H510738E-TC/LB0 B0(DDR266@CL=2.5)

Key Features

*CL : CAS Latency

Operating Frequencies

AA(DDR266@CL=2.0) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)

Speed @CL2 133MHz 133MHz 100MHz

Speed @CL2.5 133MHz 133MHz 133MHz

CL-tRCD-tRP 2-2-2 2-3-3 2.5-3-3

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

Pin Description

DM is internally loaded to match DQ and DQS identically.

stacked 512Mb TSOP-II Package Pinout

Row & Column address configuration

66Pin TSOP

(400mil x 875mil)

DDQ

SSQ

DDQ

SSQ

CS0

RAS

CAS

DDQ

AP/A

SSQ

DDQ

SSQ

DDQ

CKE0

REF

SSQ

(0.65mm Pin Pitch)

CS1

DQS

CKE1

SSQ

DDQ

SSQ

DDQ

CKE0

REF

SSQ

DQS

CKE1

DDQ

SSQ

DDQ

SSQ

CS0

RAS

CAS

DDQ

AP/A

CS1

Bank Address

BA0~BA1

Auto Precharge

A10

Organization Row Address Column Address

st.128Mx4 A0~A12 A0-A9, A11

st.64Mx8 A0~A12 A0-A9

st.128Mb x 4

st.64Mb x 8

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

Units : Millimeters

NOTE

1. ( ) IS REFERENCE

2. [ ] IS ASS’Y OUT QUALITY

66pin TSOPII / Package dimension

Package Physical Dimension

Block Diagram

64Mx4

CK,CK,CAS

RAS,WE,DM

CKE1,CS1

CKE0,CS0

I/O0-I/O3,DQS A0-A12,BA0,BA1

32Mx8

CK,CK,CAS

RAS,WE,DM

CKE1,CS1

CKE0,CS0

I/O 0 ~ I/O 3, DQS

A0-A12, BA0,BA1

st.128Mb x 4 st.64Mb x 8

10.16

(0.50) 0.45~0.75

0.125 +0.075

- 0.035

0×~8×

(4×)

(R0.25)

0.45~0.75

0.25TYP

22.62MAX

22.22 ± 0.10

(0.71)0.25 ± 0.080.65

2.54(max)

0.05(min)

11.76±0.20

#1 #33

#66 #34

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

SYMBOL TYPE DESCRIPTION

CK, CK Input Clock : CK and CK are differential clock inputs. All address and control input signals are sam-

pled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to

both edges of CK. Internal clock signals are derived from CK/CK.

CKE Input

Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and

device input buffers and output drivers. Deactivating the clock provides PRECHARGE

POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN

(row ACTIVE in any bank). CKE is synchronous for all functions except for disabling outputs,

which is achieved asynchronously. Input buffers, excluding CK, CK and CKE are disabled dur-

ing power-down and self refresh modes, providing low standby power. CKE will recognize an

LVCMOS LOW level prior to VREF being stable on power-up.

CS Input Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command

decoder. All commands are masked when CS is registered HIGH. CS provides for external

bank selection on systems with multiple banks. CS is considered p art of the command code.

RAS, CAS, WE Input Command Inputs : RAS, CAS and WE (along with CS) define the command being entered.

DM Input

Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is

sampled HIGH along with that input data during a WRITE access. DM is sampled on both

edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS

BA0, BA1 Input Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRE-

CHARGE command is being applied.

A [0 : 12] Input

Address Inputs : Provide the row address for ACTIVE commands, and the column address and

AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the mem-

ory array in the respective bank. A10 is sampled during a PRECHARGE command to deter-

mine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If

only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also

provide the op-code during a MODE REGISTER SET command. BA0 and BA1 define which

mode register is loaded during the MODE REGISTER SET command (MRS or EMRS).

DQ I/O Data Input/Output : Data bus

DQS I/O Data Strobe : Output with read data, input with write data. Edge-aligned with read data, cen-

tered in write data. Used to capture write data.

NC - No Connect : No internal electrical connection is present.

VDDQ Supply DQ Power Supply : +2.5V ± 0.2V.

VSSQ Supply DQ Ground.

VDD Supply Power Supply : +2.5V ± 0.2V (device specific).

VSS Supply Ground.

VREF Input SSTL_2 reference voltage.

Input/Output Function Description

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

Command T ruth Table (V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)

COMMAND CKEn-1 CKEn CS RAS CAS WE BA0,1 A10/AP A0 ~ A9,

A11,A12 Note

Refresh

Auto Refresh HHLL LH X 3

Self

Refresh

Entry L 3

Exit L H LHHH X3

HX X X 3

Bank Active & Row Addr. H X L L H H V Row Address

Read &

Column Address Auto Precharge Disable HXLHLHV LColumn

Address 4

Auto Precharge Enable H 4

Write &

Column Address Auto Precharge Disable HXLHLLV LColumn

Address 4

Auto Precharge Enable H 4, 6

Burst Stop H X L H H L X 7

Precharge Bank Selection HXLLHLVL X

All Banks X H 5

Active Power Down Entry H L HX X X XLV V V

Exit L H X X X X

Precharge Power Down Mode Entry H L HX X X

LHHH

Exit L H HX X X

LV V V

DM(UDM/LDM for x16 only) H X X 8

No operation (NOP) : Not defined H X HX X X X9

LHHH 9

1. OP Code : Operand Code. A0 ~ A12 & BA0 ~ BA1 : Program keys. (@EMRS/MRS)

2. EMRS/MRS can be issued only at all banks precharge st ate.

A new command can be issued 2 clock cycles after EMRS or MRS.

3. Auto refresh functions are same as the CBR refresh of DRAM.

The automatical precharge without row precharge command is meant by "Auto".

Auto/self refresh can be issued only at all banks precharge state.

4. BA0 ~ BA1 : Bank select addresses.

If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.

If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.

If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.

If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.

5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.

6. During burst write with auto precharge, new read/write command can not be issued.

Another bank read/write command can be issued after the end of burst.

New row active of the associated bank can be issued at tRP after the end of burst.

7. Burst stop command is valid at every burst length.

8. DM(x4x8) sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (W rite DM latency is 0).

9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.

Note :

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

st. 32M x 4Bit x 4 Banks / st. 16M x 8Bit x 4 Banks Double Data Rate SDRAM

The K4H510638E / K4H510738E is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,553,332 / 4x

16,777,216 words by 4/ 8bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data S trobe

allow extremely high performance up to 266Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating fre-

quencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance mem-

ory system applications.

General Description

Absolute Maximum Rating

Parameter Symbol Value Unit

Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V

Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V

Storage temperature TSTG -55 ~ +150 °C

Power dissipation PD1.5 W

Short circuit current IOS 50 mA

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommend operation condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC Operating Conditions Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)

Parameter Symbol Min Max Unit Note

Supply voltage(for device with a nominal VDD of 2.5V) VDD 2.3 2.7

I/O Supply voltage VDDQ 2.3 2.7 V

I/O Reference voltage VREF 0.49*VDDQ 0.51*VDDQ V 1

I/O Termination voltage(system) VTT VREF-0.04 VREF+0.04 V2

Input logic high voltage VIH(DC) VREF+0.15 VDDQ+0.3 V

Input logic low voltage VIL(DC) -0.3 VREF-0.15 V

Input Voltage Level, CK and CK inputs VIN(DC) -0.3 VDDQ+0.3 V

Input Differential Voltage, CK and CK inputs VID(DC) 0.36 VDDQ+0.6 V 3

V- I Matching: Pullup to Pulldown Current Ratio VI(Ratio) 0.71 1.4 - 4

Input leakage current II-2 2 uA

Output leakage current IOZ -5 5 uA

Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V IOH -16.8 mA

Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V IOL 16.8 mA

Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V IOH -9 mA

Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V IOL 9mA

1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same.

Peak-to peak noise on VREF may not exceed +/-2% of the dc value.

2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to

VREF, and must track variations in the DC level of VREF

3. VID is the magnitude of the difference between the input level on CK and the input level on CK.

4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire

temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the

maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the

maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.

Note :

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

DDR SDRAM Spec Items & Test Conditions

Conditions Symbol

Operating current - One bank Active-Precharge;

tRC=tRCmin; tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333;

DQ,DM and DQS inputs changing once per clock cycle;

address and control inputs changing once every two clock cycles.

IDD0

Operating current - One bank operation ; One bank open, BL=4, Reads

- Refer to the following page for detailed test cond ition IDD1

Percharge power-down standby current; All banks idle; power - down mode;

CKE = <VIL(max); tCK=10ns for DDR200,7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM. IDD2P

Precharge Floating standby current; CS# > =VIH(mi n);All banks idle; CKE > = VIH(min); tCK =10ns for DDR200,

7.5ns for DDR266, 6ns for DDR333; Address and other control inputs changing once per clock cycle;

Vin = Vref for DQ,DQS and DM IDD2F

Precharge Quiet standby current; CS# > = VIH(min); All banks idle;

CKE > = VIH(min); tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; Address and other control inputs

stable at >= VIH(min) or =<VIL(max); Vin = Vref for DQ ,DQS and DM IDD2Q

Active power - down standby current ; one bank active; power-down mode;

CKE=< VIL (max); tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM IDD3P

Active standby current; CS# >= VIH(min); CKE>=VIH(min);

one bank active; active - precharge; tRC=tRASmax; tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333;

DQ, DQS and DM inputs changing twice per clock cycle; address and other control inputs changing once per clock

cycle

IDD3N

Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control

inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at 7.5ns for DDR266(A2), CL=2.5 at

7.5ns for DDR266(B0), 6ns for DDR333; 50% of data changing on every transfer; lout = 0 m A IDD4R

Operating current - burst write; Burst length = 2; writes; continuous burst;

One bank active address and control inputs changing once per clock cycle; CL=2 at tCK= 10ns for DDR200, CL=2

at tCK=7.5ns for DDR266(A2), CL=2.5 at tCK=7.5ns for DDR266(B0), 6ns for DDR333; DQ, DM and DQS inputs

changing twice per clock cycle, 50% of input data changing at every burst

IDD4W

Auto refresh current; tRC = tRFC(min) - 8*tCK for DDR200 at tCK=10ns; 10*tCK for DDR266 at tCK=7.5ns;

12*tCK for DDR333 at tCK=6ns; distributed refresh IDD5

Self refresh current; CKE =< 0.2V; External clock on; tCK = 10ns for DDR200, tCK=7.5ns for DDR266, 6ns for

DDR333. IDD6

Orerating current - Four bank operation ; Four bank interleaving with BL=4

-Refer to the following page for detailed test condition IDD7A

Input/Output Capacitance (VDD=2.5, VDDQ=2.5V, TA= 25°C, f=1MHz)

Parameter Symbol Min Max Delta Unit Note

Input capacitance

(A0 ~ A12, BA0 ~ BA1, CKE0,CKE1, CS0, CS1 ,

RAS,CAS, WE)CIN1 2 3 0.5 pF 4

Input capacitance( CK, CK ) CIN2 2 3 0.25 pF 4

Data & DQS input/output capacitance COUT 4 5 0.5 pF 1,2,3,4

Input capacitance(DM for x4/8,) CIN3 4 5 pF 1,2,3,4

1.These values are guaranteed by design and are tested on a sample basis only.

2. Although DM is an input -only pin, the i nput cap acitance of this pin must model the input capacit ance of the DQ and DQS pins.

This is required to match signal propagation times of DQ, DQS, and DM in the system.

3. Unused pins are tied to ground.

4. This parameteer is sampled. VDDQ = +2.5V +0.2V, VDD = +3.3V +0.3V or +0.25V+0.2V, f=100MHz, tA=25°C, Vout(dc) =

VDDQ/2, Vout(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading

(to facilitate trace matching at the board level).

Note :

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

IDD7A : Operating cur rent: Four bank operation

1. Typical Case : Vdd = 2.5V, T=25’ C

2. Worst Case : Vdd = 2.7V, T= 10’ C

3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not

changing. lout = 0mA

4. T iming patterns

- B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge

Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing

*100% of data changing at every burst

- A2(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge

Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing

*100% of data changing at every burst

- AA(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge

Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing

*100% of data changing at every burst

Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP

< Detailed test conditions for DDR SDRAM IDD1 & IDD7A >

IDD1 : Operating current: One bank operation

1. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once

per clock cycle. lout = 0mA

2. Timing patterns

- B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK

Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing

*50% of data changing at every burst

- A2 (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK

Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing

*50% of data changing at every burst

- AA(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge

Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing

*100% of data changing at every burst

Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

DDR SDRAM IDD spec table (VDD=2.7V, T = 10°C)

Symbol st 128Mx4 (K4H510638E) Unit Notes

AA(DDR266@CL=2.0) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)

IDD0 100 100 100 mA

IDD1 120 120 120 mA

IDD2P 6 6 6 mA

IDD2F 40 40 40 mA

IDD2Q 36 36 36 mA

IDD3P 35 35 35 mA

IDD3N 65 65 65 mA

IDD4R 165 165 165 mA

IDD4W 140 140 140 mA

IDD5 180 180 180 mA

IDD6 Normal 6 6 6 mA

Low power 3 3 3 mA Optional

IDD7A 290 290 290 mA

Symbol st 64Mx8 (K4H510738E) Unit Notes

AA(DDR266@CL=2.0) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)

IDD0 100 100 100 mA

IDD1 120 120 120 mA

IDD2P 6 6 6 mA

IDD2F 40 40 40 mA

IDD2Q 36 36 36 mA

IDD3P 35 35 35 mA

IDD3N 65 65 65 mA

IDD4R 165 165 165 mA

IDD4W 140 140 140 mA

IDD5 180 180 180 mA

IDD6 Normal 6 6 6 mA

Low power 3 3 3 mA Optional

IDD7A 290 290 290 mA

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

AC Operating Conditions

Parameter/Condition Symbol Min Max-10 Unit Note

Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 V

Input Low (Logic 0) Voltage, DQ, DQS and DM signals. VIL(AC) VREF - 0.31 V

Input Diff erential Voltage, CK and /CK inputs VID(AC) 0.7 VDDQ+0.6 V 1

Input Crossing Point Voltage, CK and /CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2

AC Overshoot/Undershoot specification for Address and Control Pins

Parameter Specification

DDR333 DDR200/266

Maximum peak amplitude allowed for overshoot TBD 1.5 V

Maximum peak amplitude allowed for undershoot TBD 1.5 V

The area between the overshoot signal and VDD must be less than or equal to TBD 4.5 V -ns

The area between the undershoot signal and GND must be less than or equal to TBD 4.5 V-ns

-1

-2

-3

-4

-5 00.5

0.6875

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

6.3125

6.5 7.0

VDD Overshoot

Maximum Amplitude = 1.5V

Area = 4.5V-ns

Maximum Amplitude = 1.5V

undershoot

GND

Volts (V )

Tims(ns)

AC overshoot/Undershoot Definition

Notes :

1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.

2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

Overshoot/Undershoot specification for Data, Strobe, and Mask Pins

Parameter Specification

DDR200/266

Maximum peak amplitude allowed for overshoot 1.2 V

Maximum peak amplitude allowed for undershoot 1.2 V

The area between the overshoot signal and VDD must be less than or equal to 2.4 V-ns

The area between the undershoot signal and GND must be less than or equal to 2.4 V-ns

-1

-2

-3

-4

-5 0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0

VDDQ

Overshoot

Maximum Amplitude = 1.2V

Area = 2.4V-ns

Maximum Amplitude = 1.2V

undershoot

GND

Volts (V)

Tims(ns)

DQ/DM/DQS AC overshoot/Undershoot Definition

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

AC Timming Parameters & Specifications

Parameter Symbol AA

(DDR266@CL=2.0) A2

(DDR266@CL=2.0) B0

(DDR266@CL=2.5)) Unit Note

Min Max Min Max Min Max

Row cycle time tRC 60 65 65 ns

Refresh row cycle time tRFC 75 75 75 ns

Row active time tRAS 45 120K 45 120K 45 120K ns

RAS to CAS delay tRCD 15 20 20 ns

Row precharge time tRP 15 20 20 ns

Row active to Row active delay tRRD 15 15 15 ns

Write recovery time tWR 15 15 15 ns

Last data in to Read command tWTR 1 1 1 tCK

Col. address to Col. address delay tCCD 1 1 1 tCK

Clock cycle time CL=2.0 tCK 7.5 12 7.5 12 10 12 ns

CL=2.5 7.5 12 7.5 12 7.5 12 ns

Clock high level wid th tCH 0.45 0.55 0.4 5 0.55 0.45 0.55 tCK

Clock low level width tCL 0 .45 0.55 0.45 0.55 0.45 0.55 tCK

DQS-out access time from CK/CK tDQSCK -0.75 +0.75 -0.75 +0.75 -0.75 +0.75 ns

Output data access time from CK/CK tAC -0.75 +0.75 -0.75 +0.75 -0.75 +0.75 ns

Data strobe edge to ouput data edge tDQSQ - 0.5 - 0.5 - 0.5 ns 12

Read Preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK

Read Postambl e tRPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK

CK to valid DQS-in tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 tCK

DQS-in setup time tWPRES 0 0 0 ns 3

DQS-in hold time tW PRE 0.2 5 0.25 0.25 tCK

DQS falling edge to CK rising-setup time tDSS 0.2 0.2 0.2 tCK

DQS falling edge from CK rising-hold time tDSH 0.2 0.2 0.2 tCK

DQS-in hi g h level width tDQSH 0.35 0. 35 0.35 tCK

DQS-in lo w le v el width tDQSL 0.35 0.35 0. 35 tCK

DQS-in cycle time tDSC 0.9 1.1 0.9 1.1 0.9 1.1 tCK

Address and Control Input setup time(fast) tIS 0.9 0.9 0.9 ns i,5.7~9

Address and Control Input hold time(fast) tIH 0.9 0.9 0.9 ns i,5.7~9

Address and Control Input setup time(slow) tIS 1.0 1.0 1.0 ns i, 6~9

Address and Control Input hold time(slow ) tIH 1.0 1.0 1.0 ns i, 6~9

Data-out high impedence time from CK/CK tH Z -0.75 +0.75 -0.75 +0.75 -0.75 +0.75 ns 1

Data-out low impedence time from CK/CK tLZ - 0.75 +0.75 -0.75 +0.75 -0.75 +0.75 ns 1

Output Slew Rate Matching Ratio(rise to fall) tSLMR 0.67 1.5 0.67 1.5 0.67 1.5

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

System Characteristics for DDR SDRAM

The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure

proper system performance. these characteristics are for system simulation purposes and are guaranteed by design.

Table 1 : Input Slew Rate for DQ, DQS, and DM

Table 2 : Input Setup & Hold Time Derating for Slew Rate

Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate

AC CHARACTERISTICS DDR333 DDR266 DDR200

PARAMETER SYMBOL MIN MAX MIN MAX MIN MAX Units Notes

DQ/DM/DQS input slew rate measured between

VIH(DC), VIL(DC) and VIL(DC), VIH(DC) DCSLEW TBD TBD TBD TBD 0.5 4.0 V/ns a , m

Input Slew Rate tIS tIH Units Notes

0.5 V/ns 0 0 ps i

0.4 V/ns +50 0 ps i

0.3 V/ns +100 0 ps i

Input Slew Rate tDS tDH Units Notes

0.5 V/ns 0 0 ps k

0.4 V/ns +75 +75 p s k

0.3 V/ns +150 +150 ps k

Parameter Symbol AA

(DDR266@CL=2.0) A2

(DDR266@CL=2.0) B0

(DDR266@CL=2.5)) Unit Note

Min Max Min Max Min Max

Mode register set cycle time tMRD 15 15 15 ns

DQ & DM setup ti me to DQS tDS 0.5 0.5 0.5 ns j, k

DQ & DM hold time to DQS tDH 0.5 0.5 0.5 ns j, k

Control & Address input pulse width tIPW 2.2 2.2 2.2 ns 8

DQ & DM input pulse width tDIPW 1.75 1.75 1.75 ns 8

Power down exit time tPDEX 7.5 7.5 7.5 ns

Exit self refresh to non-Read command tXSNR 75 75 75 ns

Exit self refresh to read command tXSRD 200 200 200 tCK

Refresh interval time tREFI 7.8 7.8 7.8 us 4

Output DQS valid window tQH tHP

-tQHS -tHP

-tQHS -ns11

Clock half period tHP tCLmin

or tCHmin -tCLmin

or tCHmin -ns10, 11

Data hold skew factor tQHS 0.75 0.75 0.75 ns 11

DQS write postamble time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK 2

Active to Read with Auto precharge

command tRAP 20 20 20

Autoprecharge write recovery +

Precharg e ti m e tD AL (tWR/tCK)

(tRP/tCK)

(tWR/tCK)

(tRP/tCK)

(tWR/tCK)

(tRP/tCK) tCK 13

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate

Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)

Table 6 : Output Slew Rate Characteristice (X16 Devices only)

Table 7 : Output Slew Rate Matching Ratio Characteristics

Delta Slew Rate tDS tDH Units Notes

+/- 0.0 V/ns 0 0 ps j

+/- 0.25 V/ns +50 +50 ps j

+/- 0.5 V/ns +100 +100 ps j

Slew Rate Characteristic Typical Range

(V/ns) Minimum

(V/ns) Maximum

(V/ns) Notes

Pullup Slew Rate 1.2 ~ 2.5 1.0 4.5 a,c,d,f,g,h

Pulldown slew 1.2 ~ 2.5 1.0 4.5 b,c,d,f,g,h

Slew Rate Characteristic Typical Range

(V/ns) Minimum

(V/ns) Maximum

(V/ns) Notes

Pullup Slew Rate 1.2 ~ 2.5 0.7 5.0 a,c,d,f,g,h

Pulldown slew 1.2 ~ 2.5 0.7 5.0 b,c,d,f,g,h

AC CHARACTERISTICS DDR266 DDR200

PARAMETER MIN MAX MIN MAX Notes

Output Slew Rate Matching Ra tio (Pullup to Pulldown) TBD TBD 0.67 1.5 e,m

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

Component Notes

1. tHZ and tLZ transitions occur in the same access time windows as valid dat a transitions. these parameters are not referenced to a

specific voltage level but specify when the device output in no longer driving (HZ), or begins driving (LZ).

2. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys

tem performance (bus turnaround) will degrade accordingly.

3. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A

valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ

ously in progress on the bus, DQS will be tran sitioning from High- Z to logic LOW . If a previous write was in progress, DQS could

be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.

4. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.

5. For command/address input slew rate ≥ 1.0 V/ns

6. For command/address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns

7. For CK & CK slew rate ≥ 1.0 V/ns

8. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by

device design or tester correlation.

9. Slew Rate is measured between VOH(ac) and VOL(ac).

10. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this

value can be greater than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the

period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into

the clock traces.

11. tQH = tHP - tQHS, where:

tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS account s for 1) The

pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst

case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and p-

channel to n-channel variation of the output drivers.

12. tDQSQ

Consists of data pin skew and output p attern ef fects, and p-channel to n-channel variation of the output drivers for any given cycle.

13. tDAL = (tWR/tCK) + (tRP/tCK)

For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and

tCK=7.5ns tDAL = (15 ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3)

tDAL = 5 clocks

System Notes :

a. Pullup slew rate is characteristized under the test conditions as shown in Figure 1.

Output Test point

VSSQ

50Ω

Figure 1 : Pullup slew rate test load

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

b. Pulldown slew rate is measured under the test conditions shown in Figure 2.

Output Test point

VDDQ

50Ω

Figure 2 : Pulldown slew rate test load

c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV)

Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV)

Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output

switching.

Example : For typical slew rate, DQ0 is switching

For minmum slew rate, all DQ bits are switching from either high to low, or low to high.

The remaining DQ bits remain the same as for previous state.

d. Evaluation conditions

Typical : 25 °C (T Ambient), VDDQ = 2.5V, typical process

Minimum : 70 °C (T Ambient), VDDQ = 2.3V, slow - slow process

Maximum : 0 °C (T Ambient), VDDQ = 2.7V, fast - fast process

e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and

voltage range. For a given output, it represent s the maximum diff erence between pullup and pulldown drivers due to process variation.

f. Verified under typical conditions for qualification purposes.

g. TSOPII package divices only.

h. Only intended for operation up to 266 Mbps per pin.

i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns

as shown in Table 2. The Input slew rate is based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or

VIH(DC) to VIL(DC), similarly for rising transitions.

j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates dif fer, as shown in Tables 3 & 4.

Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the

slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.

The delta rise/fall rate is calculated as:

{1/(Slew Rate1)} - {1/(Slew Rate2)}

For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta r ise, fall rate is - 0.5ns/V . Using the t able given, this

would result in the need for an increase in tDS and tDH of 100 ps.

k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser

on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter

mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.

m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi

tions through the DC region must be monotony.

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

Figure 3. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)

Maximum

Typical High

Minumum

Vout(V)

Iout(mA)

-220

-200

-180

-160

-140

-120

-100

-80

-60

-40

-20

0.0 1.0 2.0

Minimum

Typical Low

Ty pical High

Maximum

100

120

140

160

0.0 0.5 1.0 1.5 2.0 2.5

Iout(mA)

Typical Low

Vout(V)

Pullup Characteristics for Full Strength Output Driver

Pulldown Characteristics for Full Strength Output Driver

IBIS :I/V Characteristics for Input and Output Buffers

DDR SDRAM Output Driver V-I Characteristics

DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1.

Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input

into simulation tools. The driver characteristcs evaluation conditions are:

Output Driver Characteristic Curves Notes:

1. The full variation in driver current from minimum to maximum process, temperature and volt age will li e within the outer bo un ding lines

the of the V-I curve of Figure 3 and 4.

2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figure 3 and 4.

3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity +/- 10%, for device drain to

source voltages fr om 0.1 to1.0. This specification is a design objective only. It is not guaranteed.

Typical 25×C Vdd/Vddq = 2.5V, typical process

Minimum 70×C Vdd/Vddq = 2.3V, slow-slow process

Maximum 0×C Vdd/Vddq = 2.7V, fast-fast process

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

Table 8. Full Strength Driver Characteristics

Pulldown Current (mA) pullup Current (mA)

Voltage

(V)

Typical

Low

Typical

High Minimum Maximum

Typical

Low

Typical

High Minimum Maximum

0.1 6.0 6.8 4.6 9.6 -6.1 -7.6 -4.6 -10.0

0.2 12.2 13.5 9.2 18.2 -12.2 -14.5 -9.2 -20.0

0.3 18.1 20.1 13.8 26.0 -18.1 -21.2 -13.8 -29.8

0.4 24.1 26.6 18.4 33.9 -24.0 -27.7 -18.4 -38.8

0.5 29.8 33.0 23.0 41.8 -29.8 -34.1 -23.0 -46.8

0.6 34.6 39.1 27.7 49.4 -34.3 -40.5 -27.7 -54.4

0.7 39.4 44.2 32.2 56.8 -38.1 -46.9 -32.2 -61.8

0.8 43.7 49.8 36.8 63.2 -41.1 -53.1 -36.0 -69.5

0.9 47.5 55.2 39.6 69.9 -41.8 -59.4 -38.2 -77.3

1.0 51.3 60.3 42.6 76.3 -46.0 -65.5 -38.7 -85.2

1.1 54.1 65.2 44.8 82.5 -47.8 -71.6 -39.0 -93.0

1.2 56.2 69.9 46.2 88.3 -49.2 -77.6 -39.2 -100.6

1.3 57.9 74.2 47.1 93.8 -50.0 -83.6 -39.4 -108.1

1.4 59.3 78.4 47.4 99.1 -50.5 -89.7 -39.6 -115.5

1.5 60.1 82.3 47.7 103.8 -50.7 -95.5 -39.9 -123.0

1.6 60.5 85.9 48.0 108.4 -51.0 -101.3 -40.1 -130.4

1.7 61.0 89.1 48.4 112.1 -51.1 -107.1 -40.2 -136.7

1.8 61.5 92.2 48.9 115.9 -51.3 -112.4 -40.3 -144.2

1.9 62.0 95.3 49.1 119.6 -51.5 -118.7 -40.4 -150.5

2.0 62.5 97.2 49.4 123.3 -51.6 -124.0 -40.5 -156.9

2.1 62.9 99.1 49.6 126.5 -51.8 -129.3 -40.6 -163.2

2.2 63.3 100.9 49.8 129.5 -52.0 -134.6 -40.7 -169.6

2.3 63.8 101.9 49.9 132.4 -52.2 -139.9 -40.8 -176.0

2.4 64.1 102.8 50.0 135.0 -52.3 -145.2 -40.9 -181.3

2.5 64.6 103.8 50.2 137.3 -52.5 -150.5 -41.0 -187.6

2.6 64.8 104.6 50.4 139.2 -52.7 -155.3 -41.1 -192.9

2.7 65.0 105.4 50.5 140.8 -52.8 -160.1 -41.2 -198.2

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)

Maximum

Ty pical High

Minumum

Vout(V)

Iout(mA)

-90

-80

-70

-60

-50

-40

-30

-20

-10

0.0 1.0 2.0

Iout(mA)

Minimum

Ty pical Low

Typical High

Maximum

0.0 1.0 2.0

Iout(mA)

Ty pical Low

Vout(V)

Pullup Characteristics for Weak Output Driver

Pulldown Characteristics for Weak Output Driver

DDR SDRAMDDR SDRAM stacked 512Mb E-die (x4/x8)

Rev. 1.0 July. 2003

Pulldown Current (mA) pullup Current (mA)

Voltage

(V)

Typical

Low

Typical

High Minimum Maximum

Typical

Low

Typical

High Minimum Maximum

0.1 3.4 3.8 2.6 5.0 -3.5 -4.3 -2.6 -5.0

0.2 6.9 7.6 5.2 9.9 -6.9 -8.2 -5.2 -9.9

0.3 10.3 11.4 7.8 14.6 -10.3 -12.0 -7.8 -14.6

0.4 13.6 15.1 10.4 19.2 -13.6 -15.7 -10.4 -19.2

0.5 16.9 18.7 13.0 23.6 -16.9 -19.3 -13.0 -23.6

0.6 19.6 22.1 15.7 28.0 -19.4 -22.9 -15.7 -28.0

0.7 22.3 25.0 18.2 32.2 -21.5 -26.5 -18.2 -32.2

0.8 24.7 28.2 20.8 35.8 -23.3 -30.1 -20.4 -35.8

0.9 26.9 31.3 22.4 39.5 -24.8 -33.6 -21.6 -39.5

1.0 29.0 34.1 24.1 43.2 -26.0 -37.1 -21.9 -43.2

1.1 30.6 36.9 25.4 46.7 -27.1 -40.3 -22.1 -46.7

1.2 31.8 39.5 26.2 50.0 -27.8 -43.1 -22.2 -50.0

1.3 32.8 42.0 26.6 53.1 -28.3 -45.8 -22.3 -53.1

1.4 33.5 44.4 26.8 56.1 -28.6 -48.4 -22.4 -56.1

1.5 34.0 46.6 27.0 58.7 -28.7 -50.7 -22.6 -58.7

1.6 34.3 48.6 27.2 61.4 -28.9 -52.9 -22.7 -61.4

1.7 34.5 50.5 27.4 63.5 -28.9 -55.0 -22.7 -63.5

1.8 34.8 52.2 27.7 65.6 -29.0 -56.8 -22.8 -65.6

1.9 35.1 53.9 27.8 67.7 -29.2 -58.7 -22.9 -67.7

2.0 35.4 55.0 28.0 69.8 -29.2 -60.0 -22.9 -69.8

2.1 35.6 56.1 28.1 71.6 -29.3 -61.2 -23.0 -71.6

2.2 35.8 57.1 28.2 73.3 -29.5 -62.4 -23.0 -73.3

2.3 36.1 57.7 28.3 74.9 -29.5 -63.1 -23.1 -74.9

2.4 36.3 58.2 28.3 76.4 -29.6 -63.8 -23.2 -76.4

2.5 36.5 58.7 28.4 77.7 -29.7 -64.4 -23.2 -77.7

2.6 36.7 59.2 28.5 78.8 -29.8 -65.1 -23.3 -78.8

2.7 36.8 59.6 28.6 79.7 -29.9 -65.8 -23.3 -79.7

Table 9. Weak Driver Characteristics