VS-HFA08PB120PbF, VS-HFA08PB120-N3
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Revision: 10-Jul-15 1Document Number: 94040
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HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified according to
JEDEC®-JESD47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08PB120... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A continuous current, the
VS-HFA08PB120... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08PB120... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
IF(AV) 8 A
VR1200 V
VF at IF2.4 V
trr typ. 28 ns
TJ max. 150 °C
Diode variation Single die
1
2
3
TO-247AC modified
Cathode
to base
13
Anode
1
Anode
2
2
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage VR1200 V
Maximum continuous forward current IFTC = 100 °C 8
ASingle pulse forward current IFSM 130
Maximum repetitive forward current IFRM 32
Maximum power dissipation PD
TC = 25 °C 73.5 W
TC = 100 °C 29
Operating junction and storage temperature range TJ, TStg -55 to +150 °C
VS-HFA08PB120PbF, VS-HFA08PB120-N3
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Revision: 10-Jul-15 2Document Number: 94040
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage VBR IR = 100 μA 1200 - -
V
Maximum forward voltage VFM
IF = 8.0 A
See fig. 1
-2.63.3
IF = 16 A - 3.4 4.3
IF = 8.0 A, TJ = 125 °C - 2.4 3.1
Maximum reverse
leakage current IRM
VR = VR rated See fig. 2 -0.3110μA
TJ = 125 °C, VR = 0.8 x VR rated - 135 1000
Junction capacitance CTVR = 200 V See fig. 3 - 11 20 pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 28 -
nstrr1 TJ = 25 °C
IF = 8.0 A
dIF/dt = 200 A/μs
VR = 200 V
-6395
trr2 TJ = 125 °C - 106 160
Peak recovery current
See fig. 6
IRRM1 TJ = 25 °C - 4.5 8.0 A
IRRM2 TJ = 125 °C - 6.2 11
Reverse recovery charge
See fig. 7
Qrr1 TJ = 25 °C - 140 380 nC
Qrr2 TJ = 125 °C - 335 880
Peak rate of recovery
current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C - 133 -
A/μs
dI(rec)M/dt2 TJ = 125 °C - 85 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature Tlead 0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case RthJC --1.7
K/W
Thermal resistance,
junction to ambient RthJA Typical socket mount - - 40
Thermal resistance,
case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 -
Weight -6.0- g
-0.21- oz.
Mounting torque 6.0
(5.0) -12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-247AC modified (JEDEC) HFA08PB120
VS-HFA08PB120PbF, VS-HFA08PB120-N3
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Revision: 10-Jul-15 3Document Number: 94040
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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
01046
IF - Instantaneous
Forward Current (A)
100
28
VFM - Forward Voltage Drop (V)
0.01
0.1
1
10
100
0 300 600
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1000
900 1200
TJ = 100 °C
10
100
1 10 100 1000
1
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
10 000
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Response
Single pulse
(thermal resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-HFA08PB120PbF, VS-HFA08PB120-N3
www.vishay.com Vishay Semiconductors
Revision: 10-Jul-15 4Document Number: 94040
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Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 6 - Typical Recovery Current vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Fig. 9 - Reverse Recovery Parameter Test Circuit
160
20
100 1000
dI
F
/dt (A/µs)
t
rr
(ns)
100
VR = 160 V
TJ = 125 °C
TJ = 25 °C
140
60
40
80
120
IF = 8 A
IF = 4 A
20
16
0
100 1000
dI
F
/dt (A/µs)
I
rr
(A)
8
IF = 8 A
IF = 4 A
VR = 160 V
TJ = 125 °C
TJ = 25 °C
4
12
1200
800
100 1000
dI
F
/dt (A/µs)
Q
rr
(nC)
IF = 8 A
IF = 4 A
VR = 160 V
TJ = 125 °C
TJ = 25 °C
400
200
600
0
1000
1000
100
100 1000
dIF/dt (A/µs)
dI(rec)M/dt (A/µs)
VR = 160 V
TJ = 125 °C
TJ = 25 °C
IF = 8 A
IF = 4 A
10
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
VS-HFA08PB120PbF, VS-HFA08PB120-N3
www.vishay.com Vishay Semiconductors
Revision: 10-Jul-15 5Document Number: 94040
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-HFA08Pb120PbF 25 500 Antistatic plastic tube
VS-HFA08Pb120-N3 25 500 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95541
Part marking information TO-247AC modified PbF www.vishay.com/doc?95255
TO-247AC modified -N3 www.vishay.com/doc?95442
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
1- Vishay Semiconductors product
2- HEXFRED® family
3- Electron irradiated
4- Current rating (08 = 8A)
5- PB = TO-247AC modified
Device code
51 32 4 6 7
HFVS- A 08 PB 120 PbF
6
7
- Voltage rating: (120 = 1200 V)
- Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 21-Apr-15 1Document Number: 95541
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TO-247 - 50 mils L/F modified
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerance per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.35 0.020 0.053
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.17 1.37 0.046 0.054 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 Ø P 3.56 3.66 0.14 0.144
c 0.38 0.89 0.015 0.035 Ø P1 - 7.39 - 0.291
c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
E
N
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
A
(6) Ø P (Datum B)
Ø P1
D1 (4)
4
E1
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Plating
0.10 AC
M M
Ø K BD
M M
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