IXGH16N60C2D1 - IXYS - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 600 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ600 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C40 A

IC110 TC= 110°C16 A

IF110 TC= 110°C11 A

ICM TC= 25°C, 1ms 100 A

SSOA VGE = 15V, TJ = 125°C, RG = 22Ω ICM = 32 A

(RBSOA) Clamped Inductive load VCE ≤ ≤

≤ ≤

≤ VCES

PCTC= 25°C 150 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

MdMounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.

FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.

TL Maximum Lead Temperature for Soldering 300 °C

TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS99179B(08/10)

HiPerFASTTM IGBTs

C2-Class High Speed

w/ Diode

VCES = 600V

IC110 = 16A

VCE(sat) ≤≤

≤≤

≤ 3.0V

tfi(typ) = 33ns

Features

zOptimized for Low Switching Losses

zSquare RBSOA

zAnti-Parallel Ultra Fast Diode

zInternational Standard Packages

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zPower Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

IXGA16N60C2D1

IXGP16N60C2D1

IXGH16N60C2D1

TO-247 (IXGH)

GDS

CE

G = Gate C = Collector

E = Emitter Tab = Collector

TO-263 AA (IXGA)

GCE

TO-220AB (IXGP)

G

E

C (Tab)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VGE(th) IC= 250μA, VCE = VGE 3.0 5.5 V

ICES VCE = VCES, VGE = 0V 25 μA

TJ = 125°C 1 mA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC = 12A, VGE = 15V, Note1 3.0 V

TJ = 125°C 1.8 V

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60C2D1 IXGP16N60C2D1

IXGH16N60C2D1

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VF IF = 10A, VGE = 0V, Note 1 3.0 V

TJ = 125°C 1.7 V

IRM 2.5 A

trr 110 ns

trr 30 ns

RthJC 2.5 °C/W

IF = 12A, VGE = 0V,

-diF/dt = 100A/μs, VR = 100V, TJ = 125°C

IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs IC = 12A, VCE = 10V, Note 1 8 S

Cies 657 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 72 pF

Cres 22 pF

Qg(on) 25 nC

Qge IC = 12A, VGE = 15V, VCE = 0.5 • VCES 5 nC

Qgc 13 nC

td(on) 16 ns

tri 17 ns

Eon 0.16 mJ

td(off) 75 ns

tfi 33 ns

Eoff 0.09 0.16 mJ

td(on) 16 ns

tri 18 ns

Eon 0.27 mJ

td(off) 115 ns

tfi 100 ns

Eoff 0.27 mJ

RthJC 0.83 °C/W

RthCK TO-220 0.50 °C/W

TO-247 0.21 °C/W

Inductive load, TJ = 125°C

IC = 12A, VGE = 15V

VCE = 400V, RG = 22Ω

Note 2

Inductive load, TJ = 25°C

IC = 12A, VGE = 15V

VCE = 400V, RG = 22Ω

Note 2

IXGA16N60C2D1 IXGP16N60C2D1

IXGH16N60C2D1

Pins: 1 - Gate 2 - Collector

3 - Emitter

TO-220 (IXGP) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

TO-263 (IXGA) Outline

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom Side

TO-247 (IXGH) AD Outline

1 = Gate

2 = Collector

3 = Emitter

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60C2D1 IXGP16N60C2D1

IXGH16N60C2D1

Fi g . 1. Ou tpu t C har ac ter i sti cs @ T

J

= 25ºC

0

4

8

12

16

20

24

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15

V

13

V

12

V

9V

6V

8V

10V

7V

11V

Fi g . 2. Exte n d ed Ou tpu t Ch ar ac ter i sti cs @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

90

100

110

0 5 10 15 20 25 30

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

8V

7V

9V

11V

13V

12V

14V

10V

Fi g . 3. Ou tp ut C har act er i sti cs @ T

J

= 125º C

0

4

8

12

16

20

24

0 0.5 1 1.5 2 2.5 3 3.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15

V

13

V

12

V

11

V

9V

6V

8V

7V

10V

Fig. 4. Dependence of V

CE(sat)

on

Junction T emperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

0255075100125150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 12A

I

C

= 6A

I

C

= 24A

Fi g . 5. C o l l ector -to -E mitt er Vo l t ag e vs.

Gate-to -Emi tter Vo l tage

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

7 8 9 101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 24

A

T

J

= 25ºC

12

A

6

A

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

4567891011

V

GE

- Volts

I

C

- Amperes

T

J

= - 40ºC

25ºC

125ºC

IXGA16N60C2D1 IXGP16N60C2D1

IXGH16N60C2D1

Fig. 7. Transconductance

0

2

4

6

8

10

12

14

16

0 5 10 15 20 25 30 35

I

C

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g . 10. R everse-B i as Safe Op er at i n g Area

0

5

10

15

20

25

30

35

100 150 200 250 300 350 400 450 500 550 600 650

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 22

Ω

dv / dt < 10V / ns

Fi g . 11. Maximum Tran sien t Ther mal I mp ed an ce

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fi g . 8. Gate Ch ar g e

0

2

4

6

8

10

12

14

16

0 4 8 1216202428

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 300V

I

C

= 12A

I

G

= 10mA

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60C2D1 IXGP16N60C2D1

IXGH16N60C2D1

Fig. 12. Inductive Switching Energy Loss vs.

Gate Resistance

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

20 30 40 50 60 70 80 90 100

R

G

- Ohms

E

off

- MilliJoules

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

E

on

- MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 400V

I

C

= 12A

I

C

= 24A

Fig. 15. Inductive Turn-off Switching Times vs.

Gate Resistance

90

95

100

105

110

115

120

125

130

20 30 40 50 60 70 80 90 100

R

G

- Ohms

t

f i

- Nanoseconds

40

80

120

160

200

240

280

320

360

t

d

(

off

)

- Nanoseconds

t

f i

t

d(off)

- - - -

T

J

= 125ºC,

VGE

= 15V

VCE

= 400V

I

C

= 12A

I

C

= 24A

Fig. 13. Inductive Switching Ener gy Loss vs.

Collector Current

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

12 13 14 15 16 17 18 19 20 21 22 23 24

I

C

- Amperes

E

off

- MilliJoules

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 22

Ω ,

V

GE

= 15V

V

CE

= 400V

T

J

= 125ºC

T

J

= 25ºC

Fig. 14. Inductive Switching Ener gy Loss vs.

Junction Temperature

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

E

off

- MilliJoules

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 22

Ω ,

V

GE

= 15V

V

CE

= 400V

I

C

= 12A

I

C

= 24A

Fig. 16. Inductive Turn-off Switching Times vs.

Collector Current

0

20

40

60

80

100

120

140

160

180

12 13 14 15 16 17 18 19 20 21 22 23 24

I

C

- Amperes

t

f i

- Nanoseconds

50

60

70

80

90

100

110

120

130

140

t

d(off)

- Nanoseconds

t

f i

t

d(off)

- - - -

R

G

= 22

Ω

, V

GE

= 15V

V

CE

= 400V

T

J

= 125ºC

T

J

= 25ºC

Fi g. 17. I n d uctive Tur n-o ff Swi tc hin g Times vs.

Junction Temperature

0

20

40

60

80

100

120

140

160

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f i

- Nanoseconds

50

60

70

80

90

100

110

120

130

t

d

(

off

)

- Nanoseconds

t

f i

t

d(on)

- - - -

R

G

= 22

Ω

, V

GE

= 15V

V

CE

= 400V

I

C

= 24A, 12A

Fig. 19. Inductive Turn-on Switching T imes vs.

Collector Current

10

15

20

25

30

35

40

45

50

12 13 14 15 16 17 18 19 20 21 22 23 24

I

C

- Amperes

t

r i

- Nanoseconds

15.0

15.5

16.0

16.5

17.0

17.5

18.0

18.5

19.0

t

d

(

on

)

- Nanoseconds

t

r i

td(on)

- - - -

R

G

= 22

Ω

, V

GE

= 15V

V

CE

= 400V

T

J

= 25ºC, 125ºC

Fig. 20. Inductive T urn-on Switching Times vs.

Jun ct i o n Temper at u r e

10

15

20

25

30

35

40

45

50

55

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r i

- Nanoseconds

15.0

15.5

16.0

16.5

17.0

17.5

18.0

18.5

19.0

19.5

t

d

(

on

)

- Nanoseconds

t

r i

td(on)

- - - -

R

G

= 22

Ω

, V

GE

= 15V

V

CE

= 400V

I

C

= 24A

I

C

= 12A

Fig. 18. Inductive T urn-on Switching T i mes vs.

Gate Resistance

0

10

20

30

40

50

60

70

80

90

20 30 40 50 60 70 80 90 100

R

G

- Ohms

t

r i

- Nanoseconds

10

15

20

25

30

35

40

45

50

55

t

d

(

on

)

- Nanoseconds

t

r i

td(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 400V

I

C

= 12A

I

C

= 24A

IXYS REF: IXG_16N60C3D1(3D)7-29-10

IXGA16N60C2D1 IXGP16N60C2D1

IXGH16N60C2D1